硫化镍纳米粒子的结构和电学特征

IF 3.3 3区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC Optical and Quantum Electronics Pub Date : 2024-10-22 DOI:10.1007/s11082-024-07585-z
N. Roushdy, Mohamed S. Elnouby, A. A. M. Farag, Mervet Ramadan, O. El-Shazly, E. F. El-Wahidy
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引用次数: 0

摘要

通过将 Ni(CH3COO)2∙2H2O 和硫脲粉末充分混合的精细工艺,成功合成了硫化镍纳米粒子。X 射线衍射分析深入揭示了 NiS 的结构性质,揭示了其六方体系的多晶特性。这些信息非常重要,是了解材料在各种应用中的行为和功能的基础。确定平均晶粒尺寸、微应变和位错的平均值 硫酸镍纳米粒子是通过将 Ni(II)2∙2H2O 和硫脲充分混合的粉末成功合成的。X 射线衍射分析深入揭示了 NiS 的结构性质,揭示了其六方体系的多晶特性。这一信息至关重要,因为它是了解材料在各种应用中的行为和功能的基础。确定 (100) 平面的平均晶粒尺寸、微应变和位错密度的平均值(分别为 32.62 nm、0.000296 和 0.000939 nm-2)有助于全面了解该材料的结构特征。在可见光区域,NiS 的光致发光光谱在 405.8 和 428.25 nm 处出现了分裂峰,揭示了电子和空穴之间的辐射重组过程。通过热重图确认热稳定性对于高温环境中的应用至关重要,可确保材料在不同条件下的可靠性。利用附带透射电子显微镜的能量色散光谱分析 NiS 的化学计量,可以深入了解材料的组成。循环伏安法结果表明,NiS 的扩散系数大于添加到碳中的扩散系数,这对电化学应用具有重要意义。在燃料电池应用的循环伏安法中观察到的独特特征峰表明,NiS 有可能用于能源转换技术,从而拓宽了其应用范围。NiS 能够通过电化学阻抗光谱阐明电化学系统的物理和电子特性,这一点得到了证实,凸显了它作为一种多功能材料在各种研究和实用领域的重要性。
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Structural and electrical characterization of nickel sulfide nanoparticles

Nickel sulfide nanoparticles were successfully synthesized through a meticulous process involving a well-mixed powder of Ni(CH3COO)2∙2H2O and Thiourea. The X-ray diffraction analysis provided insights into the structural nature of NiS, revealing its polycrystalline characteristics with a hexagonal system. This information is fundamental, as it forms the basis for understanding the material’s behavior and functionality in various applications. Determining the average values of mean crystallite size, microstrain, and dislocation Nickel sulfide nanoparticles were successfully synthesized through a careful process involving a well-mixed powder of Ni(II)2∙2H2O and Thiourea. The X-ray diffraction analysis provided insights into the structural nature of NiS, revealing its polycrystalline characteristics with a hexagonal system. This information is crucial as it forms the basis for understanding the material’s behavior and functionality in various applications. Determining the average values of mean crystallite size, microstrain, and dislocation density for the (100) plane (32.62 nm, 0.000296, and 0.000939 nm-2, respectively) contributes to a comprehensive understanding of the material’s structural features. The photoluminescence spectrum of NiS in the visible region revealed split peaks at 405.8 and 428.25 nm, shedding light on the radiative recombination process between electrons and holes. The confirmation of thermal stability through a thermogravimetry diagram is essential for applications in elevated temperature environments, ensuring the material’s reliability under varying conditions. Analyzing the stoichiometry of NiS using energy dispersive spectroscopy attached to transmission electron microscopy provides insights into the material’s composition. Cyclic voltammetry results indicating a diffusion coefficient greater than that of NiS added to carbon hold significance for electrochemical applications. The unique characteristic peaks observed in cyclic voltammetry for fuel cell applications suggest the potential use of NiS in energy conversion technologies, broadening its scope of application. The confirmation of NiS’s ability to elucidate the physical and electronic properties of electrochemical systems through electrochemical impedance spectroscopy underlines its importance as a versatile material in various research and practical domains.

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来源期刊
Optical and Quantum Electronics
Optical and Quantum Electronics 工程技术-工程:电子与电气
CiteScore
4.60
自引率
20.00%
发文量
810
审稿时长
3.8 months
期刊介绍: Optical and Quantum Electronics provides an international forum for the publication of original research papers, tutorial reviews and letters in such fields as optical physics, optical engineering and optoelectronics. Special issues are published on topics of current interest. Optical and Quantum Electronics is published monthly. It is concerned with the technology and physics of optical systems, components and devices, i.e., with topics such as: optical fibres; semiconductor lasers and LEDs; light detection and imaging devices; nanophotonics; photonic integration and optoelectronic integrated circuits; silicon photonics; displays; optical communications from devices to systems; materials for photonics (e.g. semiconductors, glasses, graphene); the physics and simulation of optical devices and systems; nanotechnologies in photonics (including engineered nano-structures such as photonic crystals, sub-wavelength photonic structures, metamaterials, and plasmonics); advanced quantum and optoelectronic applications (e.g. quantum computing, memory and communications, quantum sensing and quantum dots); photonic sensors and bio-sensors; Terahertz phenomena; non-linear optics and ultrafast phenomena; green photonics.
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