{"title":"二维晶体管感受压力","authors":"Jinghui Gao, Yuan Liu","doi":"10.1038/s41928-024-01249-2","DOIUrl":null,"url":null,"abstract":"CMOS-compatible silicon nitride capping layers can be used to strain monolayer MoS2 transistors on rigid substrates, enhancing their electrical performance.","PeriodicalId":19064,"journal":{"name":"Nature Electronics","volume":null,"pages":null},"PeriodicalIF":33.7000,"publicationDate":"2024-10-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"2D transistors feel the strain\",\"authors\":\"Jinghui Gao, Yuan Liu\",\"doi\":\"10.1038/s41928-024-01249-2\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"CMOS-compatible silicon nitride capping layers can be used to strain monolayer MoS2 transistors on rigid substrates, enhancing their electrical performance.\",\"PeriodicalId\":19064,\"journal\":{\"name\":\"Nature Electronics\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":33.7000,\"publicationDate\":\"2024-10-23\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Nature Electronics\",\"FirstCategoryId\":\"5\",\"ListUrlMain\":\"https://www.nature.com/articles/s41928-024-01249-2\",\"RegionNum\":1,\"RegionCategory\":\"工程技术\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q1\",\"JCRName\":\"ENGINEERING, ELECTRICAL & ELECTRONIC\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Nature Electronics","FirstCategoryId":"5","ListUrlMain":"https://www.nature.com/articles/s41928-024-01249-2","RegionNum":1,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q1","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
CMOS-compatible silicon nitride capping layers can be used to strain monolayer MoS2 transistors on rigid substrates, enhancing their electrical performance.
期刊介绍：
Nature Electronics is a comprehensive journal that publishes both fundamental and applied research in the field of electronics. It encompasses a wide range of topics, including the study of new phenomena and devices, the design and construction of electronic circuits, and the practical applications of electronics. In addition, the journal explores the commercial and industrial aspects of electronics research.
The primary focus of Nature Electronics is on the development of technology and its potential impact on society. The journal incorporates the contributions of scientists, engineers, and industry professionals, offering a platform for their research findings. Moreover, Nature Electronics provides insightful commentary, thorough reviews, and analysis of the key issues that shape the field, as well as the technologies that are reshaping society.
Like all journals within the prestigious Nature brand, Nature Electronics upholds the highest standards of quality. It maintains a dedicated team of professional editors and follows a fair and rigorous peer-review process. The journal also ensures impeccable copy-editing and production, enabling swift publication. Additionally, Nature Electronics prides itself on its editorial independence, ensuring unbiased and impartial reporting.
In summary, Nature Electronics is a leading journal that publishes cutting-edge research in electronics. With its multidisciplinary approach and commitment to excellence, the journal serves as a valuable resource for scientists, engineers, and industry professionals seeking to stay at the forefront of advancements in the field.
京公网安备 11010802042870号
京ICP备2023020795号-1
分享
求助内容：
应助结果提醒方式：
扫码关注我们
