比较 1.5 keV X 射线和 0-30 eV 电子对 DNA 的直接和间接影响:碱基损伤、断裂、交联和簇损伤。

IF 4.6 Q2 MATERIALS SCIENCE, BIOMATERIALS ACS Applied Bio Materials Pub Date : 2024-11-14 Epub Date: 2024-10-25 DOI:10.1021/acs.jpcb.4c02799
Yingxia Gao, Yanfang Dong, Xuran Wang, Wenyue Su, Pierre Cloutier, Yi Zheng, Léon Sanche
{"title":"比较 1.5 keV X 射线和 0-30 eV 电子对 DNA 的直接和间接影响:碱基损伤、断裂、交联和簇损伤。","authors":"Yingxia Gao, Yanfang Dong, Xuran Wang, Wenyue Su, Pierre Cloutier, Yi Zheng, Léon Sanche","doi":"10.1021/acs.jpcb.4c02799","DOIUrl":null,"url":null,"abstract":"<p><p>The interaction of low energy electrons (LEEs; 1-30 eV) with genomic material can induce multiple types of damage that may cause the loss of genetic information, mutations, genome instability, and cell death. For all damages measurable by electrophoresis, we provide the first complete set of <i>G</i>-values (yield of a specific product per energy deposited) induced in plasmid DNA by the direct and indirect effects of LEEs (<i>G</i><sub>LEE</sub>) and 1.5 keV X-rays (<i>G</i><sub>X</sub>) under identical conditions. Low energy photoelectrons are produced via X-rays incident on a tantalum (Ta) substrate covered with DNA and placed in a chamber filled with nitrogen at atmospheric pressure, under four different humidity levels, ranging from dry conditions to full hydration (Γ = 2.5 to Γ = 33, where Γ is the number of water molecules/nucleotide). Damage yields are measured as a function of X-ray fluence and humidity. <i>G</i><sub>LEE</sub> values are between 2 and 27 times larger than those for X-rays. At Γ = 2.5 and 33, <i>G</i><sub>LEE</sub> values for double strand breaks are 27 and 16 times larger than <i>G</i><sub>X</sub>, respectively. The indirect effect contributes ∼50% to the total damage. These <i>G</i>-values allow quantification of potentially lethal lesions composed of strand breaks and/or base damages in the presence of varying amounts of water, i.e., closer to cellular conditions.</p>","PeriodicalId":2,"journal":{"name":"ACS Applied Bio Materials","volume":null,"pages":null},"PeriodicalIF":4.6000,"publicationDate":"2024-11-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Comparisons between the Direct and Indirect Effect of 1.5 keV X-rays and 0-30 eV Electrons on DNA: Base Lesions, Stand Breaks, Cross-Links, and Cluster Damages.\",\"authors\":\"Yingxia Gao, Yanfang Dong, Xuran Wang, Wenyue Su, Pierre Cloutier, Yi Zheng, Léon Sanche\",\"doi\":\"10.1021/acs.jpcb.4c02799\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<p><p>The interaction of low energy electrons (LEEs; 1-30 eV) with genomic material can induce multiple types of damage that may cause the loss of genetic information, mutations, genome instability, and cell death. For all damages measurable by electrophoresis, we provide the first complete set of <i>G</i>-values (yield of a specific product per energy deposited) induced in plasmid DNA by the direct and indirect effects of LEEs (<i>G</i><sub>LEE</sub>) and 1.5 keV X-rays (<i>G</i><sub>X</sub>) under identical conditions. Low energy photoelectrons are produced via X-rays incident on a tantalum (Ta) substrate covered with DNA and placed in a chamber filled with nitrogen at atmospheric pressure, under four different humidity levels, ranging from dry conditions to full hydration (Γ = 2.5 to Γ = 33, where Γ is the number of water molecules/nucleotide). Damage yields are measured as a function of X-ray fluence and humidity. <i>G</i><sub>LEE</sub> values are between 2 and 27 times larger than those for X-rays. At Γ = 2.5 and 33, <i>G</i><sub>LEE</sub> values for double strand breaks are 27 and 16 times larger than <i>G</i><sub>X</sub>, respectively. The indirect effect contributes ∼50% to the total damage. These <i>G</i>-values allow quantification of potentially lethal lesions composed of strand breaks and/or base damages in the presence of varying amounts of water, i.e., closer to cellular conditions.</p>\",\"PeriodicalId\":2,\"journal\":{\"name\":\"ACS Applied Bio Materials\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":4.6000,\"publicationDate\":\"2024-11-14\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"ACS Applied Bio Materials\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1021/acs.jpcb.4c02799\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"2024/10/25 0:00:00\",\"PubModel\":\"Epub\",\"JCR\":\"Q2\",\"JCRName\":\"MATERIALS SCIENCE, BIOMATERIALS\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"ACS Applied Bio Materials","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1021/acs.jpcb.4c02799","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"2024/10/25 0:00:00","PubModel":"Epub","JCR":"Q2","JCRName":"MATERIALS SCIENCE, BIOMATERIALS","Score":null,"Total":0}
引用次数: 0

摘要

低能电子(LEEs;1-30 eV)与基因组材料的相互作用可诱发多种类型的损伤,可能导致遗传信息丢失、突变、基因组不稳定和细胞死亡。对于电泳可测量的所有损伤,我们首次提供了在相同条件下,低能电子(GLEE)和 1.5 千伏 X 射线(GX)直接和间接作用在质粒 DNA 中诱导的一套完整的 G 值(每沉积能量特定产物的产量)。低能光电子是通过 X 射线入射到覆盖有 DNA 的钽(Ta)基板上产生的,该基板被放置在一个充满氮气的常压室中,在从干燥到完全水合(Γ = 2.5 到 Γ = 33,其中 Γ 是水分子/核苷酸的数量)的四种不同湿度条件下。破坏率是根据 X 射线通量和湿度的函数进行测量的。GLEE 值是 X 射线值的 2 到 27 倍。在 Γ = 2.5 和 33 时,双股断裂的 GLEE 值分别是 GX 的 27 倍和 16 倍。间接效应占总损伤的 50%。这些 G 值可以量化在不同水量(即更接近细胞条件)下由链断裂和/或碱基损伤组成的潜在致命病变。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
查看原文
分享 分享
微信好友 朋友圈 QQ好友 复制链接
本刊更多论文
Comparisons between the Direct and Indirect Effect of 1.5 keV X-rays and 0-30 eV Electrons on DNA: Base Lesions, Stand Breaks, Cross-Links, and Cluster Damages.

The interaction of low energy electrons (LEEs; 1-30 eV) with genomic material can induce multiple types of damage that may cause the loss of genetic information, mutations, genome instability, and cell death. For all damages measurable by electrophoresis, we provide the first complete set of G-values (yield of a specific product per energy deposited) induced in plasmid DNA by the direct and indirect effects of LEEs (GLEE) and 1.5 keV X-rays (GX) under identical conditions. Low energy photoelectrons are produced via X-rays incident on a tantalum (Ta) substrate covered with DNA and placed in a chamber filled with nitrogen at atmospheric pressure, under four different humidity levels, ranging from dry conditions to full hydration (Γ = 2.5 to Γ = 33, where Γ is the number of water molecules/nucleotide). Damage yields are measured as a function of X-ray fluence and humidity. GLEE values are between 2 and 27 times larger than those for X-rays. At Γ = 2.5 and 33, GLEE values for double strand breaks are 27 and 16 times larger than GX, respectively. The indirect effect contributes ∼50% to the total damage. These G-values allow quantification of potentially lethal lesions composed of strand breaks and/or base damages in the presence of varying amounts of water, i.e., closer to cellular conditions.

求助全文
通过发布文献求助,成功后即可免费获取论文全文。 去求助
来源期刊
ACS Applied Bio Materials
ACS Applied Bio Materials Chemistry-Chemistry (all)
CiteScore
9.40
自引率
2.10%
发文量
464
期刊最新文献
A Systematic Review of Sleep Disturbance in Idiopathic Intracranial Hypertension. Advancing Patient Education in Idiopathic Intracranial Hypertension: The Promise of Large Language Models. Anti-Myelin-Associated Glycoprotein Neuropathy: Recent Developments. Approach to Managing the Initial Presentation of Multiple Sclerosis: A Worldwide Practice Survey. Association Between LACE+ Index Risk Category and 90-Day Mortality After Stroke.
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
0
微信
客服QQ
Book学术公众号 扫码关注我们
反馈
×
意见反馈
请填写您的意见或建议
请填写您的手机或邮箱
已复制链接
已复制链接
快去分享给好友吧!
我知道了
×
扫码分享
扫码分享
Book学术官方微信
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术
文献互助 智能选刊 最新文献 互助须知 联系我们:info@booksci.cn
Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。
Copyright © 2023 Book学术 All rights reserved.
ghs 京公网安备 11010802042870号 京ICP备2023020795号-1