One-step fabrication of high energy storage polymer films with a wide bandgap and high melting temperature induced by the fluorine effect for high temperature capacitor applications with ultra-high efficiency.

The development of polymer dielectrics with both high energy density and low energy loss is a formidable challenge in the area of high-temperature dielectric energy storage. To address this challenge, a class of polymers (Parylene F) are designed by alternating fluorinated aromatic rings and vinyl groups in the polymer chain to confine the conjugating sequence and broaden the bandgap with the fluorine effect. The target films with desired thickness, ultra-high purity, and a wide bandgap are facilely fabricated by a one-step chemical vapor deposition (CVD) technique from monomers. The symmetric and bulky aromatic structures exhibit high crystalline performance and excellent stability at high temperature. The presence of strongly electronegative fluorine atoms effectively enhances bandgap and electron trapping capability, which effectively reduces the conduction loss as well as the possibility of breakdown at high temperatures. CVD technology avoids the post-processing film-forming process, ensuring the fabrication of thin films with high quality. These benefits allow Parylene F films to effectively store electrical energy at temperature up to 150 °C, exhibiting a record discharged energy density of 2.92 J cm^-3 at charge-discharge efficiency exceeding 90%. This work provides a new idea for the design and synthesis of all-organic polymer dielectric films for high temperature applications.