Hai Dang Ngo, Vo Doan Thanh Truong, Van Qui Le, Hoai Phuong Pham, Thi Kim Hang Pham
{"title":"钽中间层在增强 Fe3O4 薄膜性能方面的作用。","authors":"Hai Dang Ngo, Vo Doan Thanh Truong, Van Qui Le, Hoai Phuong Pham, Thi Kim Hang Pham","doi":"10.3762/bjnano.15.101","DOIUrl":null,"url":null,"abstract":"<p><p>High spin polarization and low resistivity of Fe<sub>3</sub>O<sub>4</sub> at room temperature have been an appealing topic in spintronics with various promising applications. High-quality Fe<sub>3</sub>O<sub>4</sub> thin films are a must to achieve the goals. In this report, Fe<sub>3</sub>O<sub>4</sub> films on different substrates (SiO<sub>2</sub>/Si(100), MgO(100), and MgO/Ta/SiO<sub>2</sub>/Si(100)) were fabricated at room temperature with radio-frequency (RF) sputtering and annealed at 450 °C for 2 h. The morphological, structural, and magnetic properties of the deposited samples were characterized with atomic force microscopy, X-ray diffractometry, and vibrating sample magnetometry. The polycrystalline Fe<sub>3</sub>O<sub>4</sub> film grown on MgO/Ta/SiO<sub>2</sub>/Si(100) presented very interesting morphology and structure characteristics. More importantly, changes in grain size and structure due to the effect of the MgO/Ta buffering layers have a strong impact on saturation magnetization and coercivity of Fe<sub>3</sub>O<sub>4</sub> thin films compared to cases of no or just a single buffering layer.</p>","PeriodicalId":8802,"journal":{"name":"Beilstein Journal of Nanotechnology","volume":"15 ","pages":"1253-1259"},"PeriodicalIF":2.6000,"publicationDate":"2024-10-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://www.ncbi.nlm.nih.gov/pmc/articles/PMC11496724/pdf/","citationCount":"0","resultStr":"{\"title\":\"The role of a tantalum interlayer in enhancing the properties of Fe<sub>3</sub>O<sub>4</sub> thin films.\",\"authors\":\"Hai Dang Ngo, Vo Doan Thanh Truong, Van Qui Le, Hoai Phuong Pham, Thi Kim Hang Pham\",\"doi\":\"10.3762/bjnano.15.101\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<p><p>High spin polarization and low resistivity of Fe<sub>3</sub>O<sub>4</sub> at room temperature have been an appealing topic in spintronics with various promising applications. High-quality Fe<sub>3</sub>O<sub>4</sub> thin films are a must to achieve the goals. In this report, Fe<sub>3</sub>O<sub>4</sub> films on different substrates (SiO<sub>2</sub>/Si(100), MgO(100), and MgO/Ta/SiO<sub>2</sub>/Si(100)) were fabricated at room temperature with radio-frequency (RF) sputtering and annealed at 450 °C for 2 h. The morphological, structural, and magnetic properties of the deposited samples were characterized with atomic force microscopy, X-ray diffractometry, and vibrating sample magnetometry. The polycrystalline Fe<sub>3</sub>O<sub>4</sub> film grown on MgO/Ta/SiO<sub>2</sub>/Si(100) presented very interesting morphology and structure characteristics. More importantly, changes in grain size and structure due to the effect of the MgO/Ta buffering layers have a strong impact on saturation magnetization and coercivity of Fe<sub>3</sub>O<sub>4</sub> thin films compared to cases of no or just a single buffering layer.</p>\",\"PeriodicalId\":8802,\"journal\":{\"name\":\"Beilstein Journal of Nanotechnology\",\"volume\":\"15 \",\"pages\":\"1253-1259\"},\"PeriodicalIF\":2.6000,\"publicationDate\":\"2024-10-14\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"https://www.ncbi.nlm.nih.gov/pmc/articles/PMC11496724/pdf/\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Beilstein Journal of Nanotechnology\",\"FirstCategoryId\":\"88\",\"ListUrlMain\":\"https://doi.org/10.3762/bjnano.15.101\",\"RegionNum\":4,\"RegionCategory\":\"材料科学\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"2024/1/1 0:00:00\",\"PubModel\":\"eCollection\",\"JCR\":\"Q3\",\"JCRName\":\"MATERIALS SCIENCE, MULTIDISCIPLINARY\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Beilstein Journal of Nanotechnology","FirstCategoryId":"88","ListUrlMain":"https://doi.org/10.3762/bjnano.15.101","RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"2024/1/1 0:00:00","PubModel":"eCollection","JCR":"Q3","JCRName":"MATERIALS SCIENCE, MULTIDISCIPLINARY","Score":null,"Total":0}
The role of a tantalum interlayer in enhancing the properties of Fe3O4 thin films.
High spin polarization and low resistivity of Fe3O4 at room temperature have been an appealing topic in spintronics with various promising applications. High-quality Fe3O4 thin films are a must to achieve the goals. In this report, Fe3O4 films on different substrates (SiO2/Si(100), MgO(100), and MgO/Ta/SiO2/Si(100)) were fabricated at room temperature with radio-frequency (RF) sputtering and annealed at 450 °C for 2 h. The morphological, structural, and magnetic properties of the deposited samples were characterized with atomic force microscopy, X-ray diffractometry, and vibrating sample magnetometry. The polycrystalline Fe3O4 film grown on MgO/Ta/SiO2/Si(100) presented very interesting morphology and structure characteristics. More importantly, changes in grain size and structure due to the effect of the MgO/Ta buffering layers have a strong impact on saturation magnetization and coercivity of Fe3O4 thin films compared to cases of no or just a single buffering layer.
期刊介绍:
The Beilstein Journal of Nanotechnology is an international, peer-reviewed, Open Access journal. It provides a unique platform for rapid publication without any charges (free for author and reader) – Platinum Open Access. The content is freely accessible 365 days a year to any user worldwide. Articles are available online immediately upon publication and are publicly archived in all major repositories. In addition, it provides a platform for publishing thematic issues (theme-based collections of articles) on topical issues in nanoscience and nanotechnology.
The journal is published and completely funded by the Beilstein-Institut, a non-profit foundation located in Frankfurt am Main, Germany. The editor-in-chief is Professor Thomas Schimmel – Karlsruhe Institute of Technology. He is supported by more than 20 associate editors who are responsible for a particular subject area within the scope of the journal.