全面回顾 FinFET 技术:历史、结构、挑战、创新和新兴传感应用。

IF 3 3区 工程技术 Q2 CHEMISTRY, ANALYTICAL Micromachines Pub Date : 2024-09-25 DOI:10.3390/mi15101187
Koosha Karimi, Ali Fardoost, Mehdi Javanmard
{"title":"全面回顾 FinFET 技术:历史、结构、挑战、创新和新兴传感应用。","authors":"Koosha Karimi, Ali Fardoost, Mehdi Javanmard","doi":"10.3390/mi15101187","DOIUrl":null,"url":null,"abstract":"<p><p>The surge in demand for 3D MOSFETs, such as FinFETs, driven by recent technological advances, is explored in this review. FinFETs, positioned as promising alternatives to bulk CMOS, exhibit favorable electrostatic characteristics and offer power/performance benefits, scalability, and control over short-channel effects. Simulations provide insights into functionality and leakage, addressing off-current issues common in narrow band-gap materials within a CMOS-compatible process. Multiple structures have been introduced for FinFETs. Moreover, some studies on the fabrication of FinFETs using different materials have been discussed. Despite their potential, challenges like corner effects, quantum effects, width quantization, layout dependencies, and parasitics have been acknowledged. In the post-planar CMOS landscape, FinFETs show potential for scalability in nanoscale CMOS, which leads to novel structures for them. Finally, recent developments in FinFET-based sensors are discussed. In a general view, this comprehensive review delves into the intricacies of FinFET fabrication, exploring historical development, classifications, and cutting-edge ideas for the used materials and FinFET application, i.e., sensing.</p>","PeriodicalId":18508,"journal":{"name":"Micromachines","volume":null,"pages":null},"PeriodicalIF":3.0000,"publicationDate":"2024-09-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://www.ncbi.nlm.nih.gov/pmc/articles/PMC11509352/pdf/","citationCount":"0","resultStr":"{\"title\":\"Comprehensive Review of FinFET Technology: History, Structure, Challenges, Innovations, and Emerging Sensing Applications.\",\"authors\":\"Koosha Karimi, Ali Fardoost, Mehdi Javanmard\",\"doi\":\"10.3390/mi15101187\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<p><p>The surge in demand for 3D MOSFETs, such as FinFETs, driven by recent technological advances, is explored in this review. FinFETs, positioned as promising alternatives to bulk CMOS, exhibit favorable electrostatic characteristics and offer power/performance benefits, scalability, and control over short-channel effects. Simulations provide insights into functionality and leakage, addressing off-current issues common in narrow band-gap materials within a CMOS-compatible process. Multiple structures have been introduced for FinFETs. Moreover, some studies on the fabrication of FinFETs using different materials have been discussed. Despite their potential, challenges like corner effects, quantum effects, width quantization, layout dependencies, and parasitics have been acknowledged. In the post-planar CMOS landscape, FinFETs show potential for scalability in nanoscale CMOS, which leads to novel structures for them. Finally, recent developments in FinFET-based sensors are discussed. In a general view, this comprehensive review delves into the intricacies of FinFET fabrication, exploring historical development, classifications, and cutting-edge ideas for the used materials and FinFET application, i.e., sensing.</p>\",\"PeriodicalId\":18508,\"journal\":{\"name\":\"Micromachines\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":3.0000,\"publicationDate\":\"2024-09-25\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"https://www.ncbi.nlm.nih.gov/pmc/articles/PMC11509352/pdf/\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Micromachines\",\"FirstCategoryId\":\"5\",\"ListUrlMain\":\"https://doi.org/10.3390/mi15101187\",\"RegionNum\":3,\"RegionCategory\":\"工程技术\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q2\",\"JCRName\":\"CHEMISTRY, ANALYTICAL\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Micromachines","FirstCategoryId":"5","ListUrlMain":"https://doi.org/10.3390/mi15101187","RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"CHEMISTRY, ANALYTICAL","Score":null,"Total":0}
引用次数: 0

摘要

本综述探讨了在近期技术进步的推动下,对三维 MOSFET(如 FinFET)的需求激增。FinFET 被定位为大容量 CMOS 的有前途的替代品,具有良好的静电特性,并提供功率/性能优势、可扩展性和短沟道效应控制。通过仿真可以深入了解功能性和漏电情况,解决 CMOS 兼容工艺中窄带隙材料常见的关断电流问题。FinFET 引入了多种结构。此外,还讨论了使用不同材料制造 FinFET 的一些研究。尽管 FinFET 潜力巨大,但也面临着转角效应、量子效应、宽度量子化、布局依赖性和寄生效应等挑战。在后平面 CMOS 时代,FinFET 在纳米级 CMOS 中显示出了可扩展性的潜力,这导致了其新结构的出现。最后,还讨论了基于 FinFET 的传感器的最新发展。总的来说,本综述深入探讨了 FinFET 制作的复杂性,探讨了所用材料和 FinFET 应用(即传感)的历史发展、分类和前沿理念。
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Comprehensive Review of FinFET Technology: History, Structure, Challenges, Innovations, and Emerging Sensing Applications.

The surge in demand for 3D MOSFETs, such as FinFETs, driven by recent technological advances, is explored in this review. FinFETs, positioned as promising alternatives to bulk CMOS, exhibit favorable electrostatic characteristics and offer power/performance benefits, scalability, and control over short-channel effects. Simulations provide insights into functionality and leakage, addressing off-current issues common in narrow band-gap materials within a CMOS-compatible process. Multiple structures have been introduced for FinFETs. Moreover, some studies on the fabrication of FinFETs using different materials have been discussed. Despite their potential, challenges like corner effects, quantum effects, width quantization, layout dependencies, and parasitics have been acknowledged. In the post-planar CMOS landscape, FinFETs show potential for scalability in nanoscale CMOS, which leads to novel structures for them. Finally, recent developments in FinFET-based sensors are discussed. In a general view, this comprehensive review delves into the intricacies of FinFET fabrication, exploring historical development, classifications, and cutting-edge ideas for the used materials and FinFET application, i.e., sensing.

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来源期刊
Micromachines
Micromachines NANOSCIENCE & NANOTECHNOLOGY-INSTRUMENTS & INSTRUMENTATION
CiteScore
5.20
自引率
14.70%
发文量
1862
审稿时长
16.31 days
期刊介绍: Micromachines (ISSN 2072-666X) is an international, peer-reviewed open access journal which provides an advanced forum for studies related to micro-scaled machines and micromachinery. It publishes reviews, regular research papers and short communications. Our aim is to encourage scientists to publish their experimental and theoretical results in as much detail as possible. There is no restriction on the length of the papers. The full experimental details must be provided so that the results can be reproduced.
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