{"title":"考虑表面散射的矩形互连器件空间分辨电导率--第二部分:电路兼容建模","authors":"Xinkang Chen;Sumeet Kumar Gupta","doi":"10.1109/TED.2024.3467029","DOIUrl":null,"url":null,"abstract":"In Part I of this work, we had presented a spatially resolved model for conductivity of interconnects capturing surface scattering based on the well-known Fuchs-Sondheimer (FS) approach. However, the proposed spatially resolved FS (SRFS) model involves computing complicated integrals making it ill-suited for circuit simulations. In this part, we build upon our SRFS model to develop a circuit-compatible conductivity model for rectangular interconnects accounting for 2-D surface scattering. The proposed circuit-compatible model offers spatial resolution of conductivity as well as explicit dependence on the physical parameters such as electron mean free path (\n<inline-formula> <tex-math>$\\lambda _{{0}}$ </tex-math></inline-formula>\n), specularity (p), and interconnect geometry. We validate our circuit-compatible model over a range of physical parameters showing a close match with the physical SRFS model proposed in Part I (with error <0.7%). We also compare our circuit-compatible model with a previous spatially resolved analytical model (appropriately modified for a fair comparison) and show that our model captures the spatial resolution of conductivity and the dependence on physical parameters more accurately. Finally, we present a semi-analytical equation for the average conductivity based on our circuit-compatible model.","PeriodicalId":13092,"journal":{"name":"IEEE Transactions on Electron Devices","volume":"71 11","pages":"6950-6957"},"PeriodicalIF":2.9000,"publicationDate":"2024-10-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Spatially Resolved Conductivity of Rectangular Interconnects Considering Surface Scattering—Part II: Circuit-Compatible Modeling\",\"authors\":\"Xinkang Chen;Sumeet Kumar Gupta\",\"doi\":\"10.1109/TED.2024.3467029\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In Part I of this work, we had presented a spatially resolved model for conductivity of interconnects capturing surface scattering based on the well-known Fuchs-Sondheimer (FS) approach. However, the proposed spatially resolved FS (SRFS) model involves computing complicated integrals making it ill-suited for circuit simulations. In this part, we build upon our SRFS model to develop a circuit-compatible conductivity model for rectangular interconnects accounting for 2-D surface scattering. The proposed circuit-compatible model offers spatial resolution of conductivity as well as explicit dependence on the physical parameters such as electron mean free path (\\n<inline-formula> <tex-math>$\\\\lambda _{{0}}$ </tex-math></inline-formula>\\n), specularity (p), and interconnect geometry. We validate our circuit-compatible model over a range of physical parameters showing a close match with the physical SRFS model proposed in Part I (with error <0.7%). We also compare our circuit-compatible model with a previous spatially resolved analytical model (appropriately modified for a fair comparison) and show that our model captures the spatial resolution of conductivity and the dependence on physical parameters more accurately. Finally, we present a semi-analytical equation for the average conductivity based on our circuit-compatible model.\",\"PeriodicalId\":13092,\"journal\":{\"name\":\"IEEE Transactions on Electron Devices\",\"volume\":\"71 11\",\"pages\":\"6950-6957\"},\"PeriodicalIF\":2.9000,\"publicationDate\":\"2024-10-04\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"IEEE Transactions on Electron Devices\",\"FirstCategoryId\":\"5\",\"ListUrlMain\":\"https://ieeexplore.ieee.org/document/10705127/\",\"RegionNum\":2,\"RegionCategory\":\"工程技术\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q2\",\"JCRName\":\"ENGINEERING, ELECTRICAL & ELECTRONIC\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE Transactions on Electron Devices","FirstCategoryId":"5","ListUrlMain":"https://ieeexplore.ieee.org/document/10705127/","RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
In Part I of this work, we had presented a spatially resolved model for conductivity of interconnects capturing surface scattering based on the well-known Fuchs-Sondheimer (FS) approach. However, the proposed spatially resolved FS (SRFS) model involves computing complicated integrals making it ill-suited for circuit simulations. In this part, we build upon our SRFS model to develop a circuit-compatible conductivity model for rectangular interconnects accounting for 2-D surface scattering. The proposed circuit-compatible model offers spatial resolution of conductivity as well as explicit dependence on the physical parameters such as electron mean free path (
$\lambda _{{0}}$
), specularity (p), and interconnect geometry. We validate our circuit-compatible model over a range of physical parameters showing a close match with the physical SRFS model proposed in Part I (with error <0.7%). We also compare our circuit-compatible model with a previous spatially resolved analytical model (appropriately modified for a fair comparison) and show that our model captures the spatial resolution of conductivity and the dependence on physical parameters more accurately. Finally, we present a semi-analytical equation for the average conductivity based on our circuit-compatible model.
期刊介绍:
IEEE Transactions on Electron Devices publishes original and significant contributions relating to the theory, modeling, design, performance and reliability of electron and ion integrated circuit devices and interconnects, involving insulators, metals, organic materials, micro-plasmas, semiconductors, quantum-effect structures, vacuum devices, and emerging materials with applications in bioelectronics, biomedical electronics, computation, communications, displays, microelectromechanics, imaging, micro-actuators, nanoelectronics, optoelectronics, photovoltaics, power ICs and micro-sensors. Tutorial and review papers on these subjects are also published and occasional special issues appear to present a collection of papers which treat particular areas in more depth and breadth.