具有不对称 MXene 电极的自驱动型 β-Ga2O3 太阳盲深紫色光电探测器

IF 2.9 2区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC IEEE Transactions on Electron Devices Pub Date : 2024-09-25 DOI:10.1109/TED.2024.3454590
Chao Xie;Xisheng Cui;Shijie Xu;Yu Cheng;Liangpan Yang;Wenhua Yang;Zhixiang Huang
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引用次数: 0

摘要

在这里,我们设计了一种在自驱动模式下工作的$\beta $ -Ga2O3太阳盲深紫色(DUV)光电探测器。在 $\beta $ -Ga2O3 微薄片的两端滴涂了通过不同掺杂实现不同功函数的 MXene 薄膜,作为不对称电极。不同的功函数带来了强大的内置电场,产生了明显的光伏(PV)效应。因此,该光检测器的 Ilight/ ${I} _{text {dark}}$ 比值高达 10^{{3}}$,暗电流低至亚毫安,响应灵敏度高达 9.81 mA/W,比检测灵敏度高达 10^{{11}}$ Jones,响应速度快至 10.2/17.7 ms,并且在零偏压条件下,254 nm 光具有良好的工作稳定性。紫外/紫外抑制比可达 10^{{3}}$ 。柔性器件还能在各种弯曲状态下保持稳定的耐用性。这项研究为构建高效的紫外光探测器提供了一条可行的途径,同时也有助于开发基于 MXene 的光电器件。
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Self-Driven β-Ga2O3 Solar-Blind Deep-Ultraviolet Photodetectors With Asymmetric MXene Electrodes
Here, a $\beta $ -Ga2O3 solar-blind deep-ultraviolet (DUV) photodetector operating in self-driven mode is designed. MXene films with diverse work functions enabled by different doping are drop-coated at opposite ends of a $\beta $ -Ga2O3 microflake to serve as asymmetric electrodes. The different work functions bring about a strong built-in electric field, rendering a pronounced photovoltaic (PV) effect. As a consequence, the light detector reaches a large Ilight/ ${I} _{\text {dark}}$ ratio of $10^{{3}}$ , a low dark current of sub-pA, a decent responsivity of 9.81 mA/W, a respectable specific detectivity of $10^{{11}}$ Jones, and a fast response speed of 10.2/17.7 ms, along with good operational stability, at zero bias, upon 254 nm light. The DUV/ultraviolet rejection ratio can attain $10^{{3}}$ . A flexible device also holds robust durability at various bending states. The study provides a viable route for constructing efficient DUV light detectors and is also helpful for developing MXene-based optoelectronic devices.
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来源期刊
IEEE Transactions on Electron Devices
IEEE Transactions on Electron Devices 工程技术-工程:电子与电气
CiteScore
5.80
自引率
16.10%
发文量
937
审稿时长
3.8 months
期刊介绍: IEEE Transactions on Electron Devices publishes original and significant contributions relating to the theory, modeling, design, performance and reliability of electron and ion integrated circuit devices and interconnects, involving insulators, metals, organic materials, micro-plasmas, semiconductors, quantum-effect structures, vacuum devices, and emerging materials with applications in bioelectronics, biomedical electronics, computation, communications, displays, microelectromechanics, imaging, micro-actuators, nanoelectronics, optoelectronics, photovoltaics, power ICs and micro-sensors. Tutorial and review papers on these subjects are also published and occasional special issues appear to present a collection of papers which treat particular areas in more depth and breadth.
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