{"title":"具有不对称 MXene 电极的自驱动型 β-Ga2O3 太阳盲深紫色光电探测器","authors":"Chao Xie;Xisheng Cui;Shijie Xu;Yu Cheng;Liangpan Yang;Wenhua Yang;Zhixiang Huang","doi":"10.1109/TED.2024.3454590","DOIUrl":null,"url":null,"abstract":"Here, a \n<inline-formula> <tex-math>$\\beta $ </tex-math></inline-formula>\n-Ga2O3 solar-blind deep-ultraviolet (DUV) photodetector operating in self-driven mode is designed. MXene films with diverse work functions enabled by different doping are drop-coated at opposite ends of a \n<inline-formula> <tex-math>$\\beta $ </tex-math></inline-formula>\n-Ga2O3 microflake to serve as asymmetric electrodes. The different work functions bring about a strong built-in electric field, rendering a pronounced photovoltaic (PV) effect. As a consequence, the light detector reaches a large Ilight/\n<inline-formula> <tex-math>${I} _{\\text {dark}}$ </tex-math></inline-formula>\n ratio of \n<inline-formula> <tex-math>$10^{{3}}$ </tex-math></inline-formula>\n, a low dark current of sub-pA, a decent responsivity of 9.81 mA/W, a respectable specific detectivity of \n<inline-formula> <tex-math>$10^{{11}}$ </tex-math></inline-formula>\n Jones, and a fast response speed of 10.2/17.7 ms, along with good operational stability, at zero bias, upon 254 nm light. The DUV/ultraviolet rejection ratio can attain \n<inline-formula> <tex-math>$10^{{3}}$ </tex-math></inline-formula>\n. A flexible device also holds robust durability at various bending states. The study provides a viable route for constructing efficient DUV light detectors and is also helpful for developing MXene-based optoelectronic devices.","PeriodicalId":13092,"journal":{"name":"IEEE Transactions on Electron Devices","volume":"71 11","pages":"6804-6808"},"PeriodicalIF":2.9000,"publicationDate":"2024-09-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Self-Driven β-Ga2O3 Solar-Blind Deep-Ultraviolet Photodetectors With Asymmetric MXene Electrodes\",\"authors\":\"Chao Xie;Xisheng Cui;Shijie Xu;Yu Cheng;Liangpan Yang;Wenhua Yang;Zhixiang Huang\",\"doi\":\"10.1109/TED.2024.3454590\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Here, a \\n<inline-formula> <tex-math>$\\\\beta $ </tex-math></inline-formula>\\n-Ga2O3 solar-blind deep-ultraviolet (DUV) photodetector operating in self-driven mode is designed. MXene films with diverse work functions enabled by different doping are drop-coated at opposite ends of a \\n<inline-formula> <tex-math>$\\\\beta $ </tex-math></inline-formula>\\n-Ga2O3 microflake to serve as asymmetric electrodes. The different work functions bring about a strong built-in electric field, rendering a pronounced photovoltaic (PV) effect. As a consequence, the light detector reaches a large Ilight/\\n<inline-formula> <tex-math>${I} _{\\\\text {dark}}$ </tex-math></inline-formula>\\n ratio of \\n<inline-formula> <tex-math>$10^{{3}}$ </tex-math></inline-formula>\\n, a low dark current of sub-pA, a decent responsivity of 9.81 mA/W, a respectable specific detectivity of \\n<inline-formula> <tex-math>$10^{{11}}$ </tex-math></inline-formula>\\n Jones, and a fast response speed of 10.2/17.7 ms, along with good operational stability, at zero bias, upon 254 nm light. The DUV/ultraviolet rejection ratio can attain \\n<inline-formula> <tex-math>$10^{{3}}$ </tex-math></inline-formula>\\n. A flexible device also holds robust durability at various bending states. The study provides a viable route for constructing efficient DUV light detectors and is also helpful for developing MXene-based optoelectronic devices.\",\"PeriodicalId\":13092,\"journal\":{\"name\":\"IEEE Transactions on Electron Devices\",\"volume\":\"71 11\",\"pages\":\"6804-6808\"},\"PeriodicalIF\":2.9000,\"publicationDate\":\"2024-09-25\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"IEEE Transactions on Electron Devices\",\"FirstCategoryId\":\"5\",\"ListUrlMain\":\"https://ieeexplore.ieee.org/document/10693946/\",\"RegionNum\":2,\"RegionCategory\":\"工程技术\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q2\",\"JCRName\":\"ENGINEERING, ELECTRICAL & ELECTRONIC\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE Transactions on Electron Devices","FirstCategoryId":"5","ListUrlMain":"https://ieeexplore.ieee.org/document/10693946/","RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
Self-Driven β-Ga2O3 Solar-Blind Deep-Ultraviolet Photodetectors With Asymmetric MXene Electrodes
Here, a
$\beta $
-Ga2O3 solar-blind deep-ultraviolet (DUV) photodetector operating in self-driven mode is designed. MXene films with diverse work functions enabled by different doping are drop-coated at opposite ends of a
$\beta $
-Ga2O3 microflake to serve as asymmetric electrodes. The different work functions bring about a strong built-in electric field, rendering a pronounced photovoltaic (PV) effect. As a consequence, the light detector reaches a large Ilight/
${I} _{\text {dark}}$
ratio of
$10^{{3}}$
, a low dark current of sub-pA, a decent responsivity of 9.81 mA/W, a respectable specific detectivity of
$10^{{11}}$
Jones, and a fast response speed of 10.2/17.7 ms, along with good operational stability, at zero bias, upon 254 nm light. The DUV/ultraviolet rejection ratio can attain
$10^{{3}}$
. A flexible device also holds robust durability at various bending states. The study provides a viable route for constructing efficient DUV light detectors and is also helpful for developing MXene-based optoelectronic devices.
期刊介绍:
IEEE Transactions on Electron Devices publishes original and significant contributions relating to the theory, modeling, design, performance and reliability of electron and ion integrated circuit devices and interconnects, involving insulators, metals, organic materials, micro-plasmas, semiconductors, quantum-effect structures, vacuum devices, and emerging materials with applications in bioelectronics, biomedical electronics, computation, communications, displays, microelectromechanics, imaging, micro-actuators, nanoelectronics, optoelectronics, photovoltaics, power ICs and micro-sensors. Tutorial and review papers on these subjects are also published and occasional special issues appear to present a collection of papers which treat particular areas in more depth and breadth.