{"title":"MOSFET 中采用不对称偏置的 1 V 附近单晶体管锁存功能","authors":"Sang-Won Lee;Seung-Il Kim;Seong-Yun Yun;Joon-Kyu Han;Ji-Man Yu;Joon-Ha Son;Yang-Kyu Choi","doi":"10.1109/TED.2024.3469181","DOIUrl":null,"url":null,"abstract":"A single transistor latch (STL), driven by impact ionization (II) and band-to-band tunneling (BTBT), plays a crucial role in threshold switching in a thin-body MOSFET. The inherent challenge lies in the high latch-up voltage (\n<inline-formula> <tex-math>${V}_{\\text {LU}}$ </tex-math></inline-formula>\n) required to trigger the STL because the II and BTBT mechanisms rely on higher voltages. Moreover, thus far, strategies for adjusting the \n<inline-formula> <tex-math>${V}_{\\text {LU}}$ </tex-math></inline-formula>\n level have been limited to altering process parameters or materials that are difficult to change once decided. Therefore, these methods do not provide dynamic controllability of \n<inline-formula> <tex-math>${V}_{\\text {LU}}$ </tex-math></inline-formula>\n. The high \n<inline-formula> <tex-math>${V}_{\\text {LU}}$ </tex-math></inline-formula>\n and lack of tunability limit and hinder various applications utilizing STL. In this study, \n<inline-formula> <tex-math>${V}_{\\text {LU}}$ </tex-math></inline-formula>\n was experimentally reduced to near 1 V by asymmetric biasing, i.e., electrically separating the top of the body (ToB) and the bottom of the body (BoB) through front-gate (FG) biasing and back-gate (BG) biasing. The underlying physics of this reduction was elucidated by means of TCAD simulation through the analysis of energy band diagrams, II rates, and BTBT rates. A significant reduction in \n<inline-formula> <tex-math>${V}_{\\text {LU}}$ </tex-math></inline-formula>\n was achieved solely through electrical modulation.","PeriodicalId":13092,"journal":{"name":"IEEE Transactions on Electron Devices","volume":null,"pages":null},"PeriodicalIF":2.9000,"publicationDate":"2024-10-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Single Transistor Latch Near 1 V With Asymmetric Biasing in a MOSFET\",\"authors\":\"Sang-Won Lee;Seung-Il Kim;Seong-Yun Yun;Joon-Kyu Han;Ji-Man Yu;Joon-Ha Son;Yang-Kyu Choi\",\"doi\":\"10.1109/TED.2024.3469181\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A single transistor latch (STL), driven by impact ionization (II) and band-to-band tunneling (BTBT), plays a crucial role in threshold switching in a thin-body MOSFET. The inherent challenge lies in the high latch-up voltage (\\n<inline-formula> <tex-math>${V}_{\\\\text {LU}}$ </tex-math></inline-formula>\\n) required to trigger the STL because the II and BTBT mechanisms rely on higher voltages. Moreover, thus far, strategies for adjusting the \\n<inline-formula> <tex-math>${V}_{\\\\text {LU}}$ </tex-math></inline-formula>\\n level have been limited to altering process parameters or materials that are difficult to change once decided. Therefore, these methods do not provide dynamic controllability of \\n<inline-formula> <tex-math>${V}_{\\\\text {LU}}$ </tex-math></inline-formula>\\n. The high \\n<inline-formula> <tex-math>${V}_{\\\\text {LU}}$ </tex-math></inline-formula>\\n and lack of tunability limit and hinder various applications utilizing STL. In this study, \\n<inline-formula> <tex-math>${V}_{\\\\text {LU}}$ </tex-math></inline-formula>\\n was experimentally reduced to near 1 V by asymmetric biasing, i.e., electrically separating the top of the body (ToB) and the bottom of the body (BoB) through front-gate (FG) biasing and back-gate (BG) biasing. The underlying physics of this reduction was elucidated by means of TCAD simulation through the analysis of energy band diagrams, II rates, and BTBT rates. A significant reduction in \\n<inline-formula> <tex-math>${V}_{\\\\text {LU}}$ </tex-math></inline-formula>\\n was achieved solely through electrical modulation.\",\"PeriodicalId\":13092,\"journal\":{\"name\":\"IEEE Transactions on Electron Devices\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":2.9000,\"publicationDate\":\"2024-10-08\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"IEEE Transactions on Electron Devices\",\"FirstCategoryId\":\"5\",\"ListUrlMain\":\"https://ieeexplore.ieee.org/document/10709343/\",\"RegionNum\":2,\"RegionCategory\":\"工程技术\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q2\",\"JCRName\":\"ENGINEERING, ELECTRICAL & ELECTRONIC\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE Transactions on Electron Devices","FirstCategoryId":"5","ListUrlMain":"https://ieeexplore.ieee.org/document/10709343/","RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
Single Transistor Latch Near 1 V With Asymmetric Biasing in a MOSFET
A single transistor latch (STL), driven by impact ionization (II) and band-to-band tunneling (BTBT), plays a crucial role in threshold switching in a thin-body MOSFET. The inherent challenge lies in the high latch-up voltage (
${V}_{\text {LU}}$
) required to trigger the STL because the II and BTBT mechanisms rely on higher voltages. Moreover, thus far, strategies for adjusting the
${V}_{\text {LU}}$
level have been limited to altering process parameters or materials that are difficult to change once decided. Therefore, these methods do not provide dynamic controllability of
${V}_{\text {LU}}$
. The high
${V}_{\text {LU}}$
and lack of tunability limit and hinder various applications utilizing STL. In this study,
${V}_{\text {LU}}$
was experimentally reduced to near 1 V by asymmetric biasing, i.e., electrically separating the top of the body (ToB) and the bottom of the body (BoB) through front-gate (FG) biasing and back-gate (BG) biasing. The underlying physics of this reduction was elucidated by means of TCAD simulation through the analysis of energy band diagrams, II rates, and BTBT rates. A significant reduction in
${V}_{\text {LU}}$
was achieved solely through electrical modulation.
期刊介绍:
IEEE Transactions on Electron Devices publishes original and significant contributions relating to the theory, modeling, design, performance and reliability of electron and ion integrated circuit devices and interconnects, involving insulators, metals, organic materials, micro-plasmas, semiconductors, quantum-effect structures, vacuum devices, and emerging materials with applications in bioelectronics, biomedical electronics, computation, communications, displays, microelectromechanics, imaging, micro-actuators, nanoelectronics, optoelectronics, photovoltaics, power ICs and micro-sensors. Tutorial and review papers on these subjects are also published and occasional special issues appear to present a collection of papers which treat particular areas in more depth and breadth.