MOSFET 中采用不对称偏置的 1 V 附近单晶体管锁存功能

IF 2.9 2区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC IEEE Transactions on Electron Devices Pub Date : 2024-10-08 DOI:10.1109/TED.2024.3469181
Sang-Won Lee;Seung-Il Kim;Seong-Yun Yun;Joon-Kyu Han;Ji-Man Yu;Joon-Ha Son;Yang-Kyu Choi
{"title":"MOSFET 中采用不对称偏置的 1 V 附近单晶体管锁存功能","authors":"Sang-Won Lee;Seung-Il Kim;Seong-Yun Yun;Joon-Kyu Han;Ji-Man Yu;Joon-Ha Son;Yang-Kyu Choi","doi":"10.1109/TED.2024.3469181","DOIUrl":null,"url":null,"abstract":"A single transistor latch (STL), driven by impact ionization (II) and band-to-band tunneling (BTBT), plays a crucial role in threshold switching in a thin-body MOSFET. The inherent challenge lies in the high latch-up voltage (\n<inline-formula> <tex-math>${V}_{\\text {LU}}$ </tex-math></inline-formula>\n) required to trigger the STL because the II and BTBT mechanisms rely on higher voltages. Moreover, thus far, strategies for adjusting the \n<inline-formula> <tex-math>${V}_{\\text {LU}}$ </tex-math></inline-formula>\n level have been limited to altering process parameters or materials that are difficult to change once decided. Therefore, these methods do not provide dynamic controllability of \n<inline-formula> <tex-math>${V}_{\\text {LU}}$ </tex-math></inline-formula>\n. The high \n<inline-formula> <tex-math>${V}_{\\text {LU}}$ </tex-math></inline-formula>\n and lack of tunability limit and hinder various applications utilizing STL. In this study, \n<inline-formula> <tex-math>${V}_{\\text {LU}}$ </tex-math></inline-formula>\n was experimentally reduced to near 1 V by asymmetric biasing, i.e., electrically separating the top of the body (ToB) and the bottom of the body (BoB) through front-gate (FG) biasing and back-gate (BG) biasing. The underlying physics of this reduction was elucidated by means of TCAD simulation through the analysis of energy band diagrams, II rates, and BTBT rates. A significant reduction in \n<inline-formula> <tex-math>${V}_{\\text {LU}}$ </tex-math></inline-formula>\n was achieved solely through electrical modulation.","PeriodicalId":13092,"journal":{"name":"IEEE Transactions on Electron Devices","volume":null,"pages":null},"PeriodicalIF":2.9000,"publicationDate":"2024-10-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Single Transistor Latch Near 1 V With Asymmetric Biasing in a MOSFET\",\"authors\":\"Sang-Won Lee;Seung-Il Kim;Seong-Yun Yun;Joon-Kyu Han;Ji-Man Yu;Joon-Ha Son;Yang-Kyu Choi\",\"doi\":\"10.1109/TED.2024.3469181\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A single transistor latch (STL), driven by impact ionization (II) and band-to-band tunneling (BTBT), plays a crucial role in threshold switching in a thin-body MOSFET. The inherent challenge lies in the high latch-up voltage (\\n<inline-formula> <tex-math>${V}_{\\\\text {LU}}$ </tex-math></inline-formula>\\n) required to trigger the STL because the II and BTBT mechanisms rely on higher voltages. Moreover, thus far, strategies for adjusting the \\n<inline-formula> <tex-math>${V}_{\\\\text {LU}}$ </tex-math></inline-formula>\\n level have been limited to altering process parameters or materials that are difficult to change once decided. Therefore, these methods do not provide dynamic controllability of \\n<inline-formula> <tex-math>${V}_{\\\\text {LU}}$ </tex-math></inline-formula>\\n. The high \\n<inline-formula> <tex-math>${V}_{\\\\text {LU}}$ </tex-math></inline-formula>\\n and lack of tunability limit and hinder various applications utilizing STL. In this study, \\n<inline-formula> <tex-math>${V}_{\\\\text {LU}}$ </tex-math></inline-formula>\\n was experimentally reduced to near 1 V by asymmetric biasing, i.e., electrically separating the top of the body (ToB) and the bottom of the body (BoB) through front-gate (FG) biasing and back-gate (BG) biasing. The underlying physics of this reduction was elucidated by means of TCAD simulation through the analysis of energy band diagrams, II rates, and BTBT rates. A significant reduction in \\n<inline-formula> <tex-math>${V}_{\\\\text {LU}}$ </tex-math></inline-formula>\\n was achieved solely through electrical modulation.\",\"PeriodicalId\":13092,\"journal\":{\"name\":\"IEEE Transactions on Electron Devices\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":2.9000,\"publicationDate\":\"2024-10-08\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"IEEE Transactions on Electron Devices\",\"FirstCategoryId\":\"5\",\"ListUrlMain\":\"https://ieeexplore.ieee.org/document/10709343/\",\"RegionNum\":2,\"RegionCategory\":\"工程技术\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q2\",\"JCRName\":\"ENGINEERING, ELECTRICAL & ELECTRONIC\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE Transactions on Electron Devices","FirstCategoryId":"5","ListUrlMain":"https://ieeexplore.ieee.org/document/10709343/","RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
引用次数: 0

摘要

由撞击电离(II)和带对带隧道(BTBT)驱动的单晶体管闩锁(STL)在薄体 MOSFET 的阈值开关中起着至关重要的作用。由于 II 和 BTBT 机制依赖于更高的电压,因此触发 STL 所需的高锁存电压({V}_{text {LU}}$)是一个固有的挑战。此外,迄今为止,调整 ${V}_{text {LU}}$ 水平的策略仅限于改变工艺参数或材料,而这些参数或材料一旦确定就很难改变。因此,这些方法无法提供 ${V}_{text {LU}}$ 的动态可控性。高 ${V}_{text {LU}}$ 和缺乏可调性限制和阻碍了 STL 的各种应用。在本研究中,通过非对称偏压,即通过前栅(FG)偏压和后栅(BG)偏压将本体顶部(ToB)和本体底部(BoB)电分离,在实验中将 ${V}_{text {LU}}$ 降低到接近 1 V。通过分析能带图、II 率和 BTBT 率,利用 TCAD 仿真阐明了这种降低的基本物理原理。仅通过电调制就实现了 ${V}_{text\ {LU}}$ 的大幅降低。
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Single Transistor Latch Near 1 V With Asymmetric Biasing in a MOSFET
A single transistor latch (STL), driven by impact ionization (II) and band-to-band tunneling (BTBT), plays a crucial role in threshold switching in a thin-body MOSFET. The inherent challenge lies in the high latch-up voltage ( ${V}_{\text {LU}}$ ) required to trigger the STL because the II and BTBT mechanisms rely on higher voltages. Moreover, thus far, strategies for adjusting the ${V}_{\text {LU}}$ level have been limited to altering process parameters or materials that are difficult to change once decided. Therefore, these methods do not provide dynamic controllability of ${V}_{\text {LU}}$ . The high ${V}_{\text {LU}}$ and lack of tunability limit and hinder various applications utilizing STL. In this study, ${V}_{\text {LU}}$ was experimentally reduced to near 1 V by asymmetric biasing, i.e., electrically separating the top of the body (ToB) and the bottom of the body (BoB) through front-gate (FG) biasing and back-gate (BG) biasing. The underlying physics of this reduction was elucidated by means of TCAD simulation through the analysis of energy band diagrams, II rates, and BTBT rates. A significant reduction in ${V}_{\text {LU}}$ was achieved solely through electrical modulation.
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来源期刊
IEEE Transactions on Electron Devices
IEEE Transactions on Electron Devices 工程技术-工程:电子与电气
CiteScore
5.80
自引率
16.10%
发文量
937
审稿时长
3.8 months
期刊介绍: IEEE Transactions on Electron Devices publishes original and significant contributions relating to the theory, modeling, design, performance and reliability of electron and ion integrated circuit devices and interconnects, involving insulators, metals, organic materials, micro-plasmas, semiconductors, quantum-effect structures, vacuum devices, and emerging materials with applications in bioelectronics, biomedical electronics, computation, communications, displays, microelectromechanics, imaging, micro-actuators, nanoelectronics, optoelectronics, photovoltaics, power ICs and micro-sensors. Tutorial and review papers on these subjects are also published and occasional special issues appear to present a collection of papers which treat particular areas in more depth and breadth.
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