Tianxing Hu;Min Li;Hua Xu;Hong Tao;Jianhua Zou;Junhong Zhou;Miao Xu;Junbiao Peng;Lei Wang
{"title":"利用原子层沉积实现高性能掺钛 InZnO 薄膜晶体管的新策略","authors":"Tianxing Hu;Min Li;Hua Xu;Hong Tao;Jianhua Zou;Junhong Zhou;Miao Xu;Junbiao Peng;Lei Wang","doi":"10.1109/TED.2024.3466836","DOIUrl":null,"url":null,"abstract":"Titanium-doped InZnO (TiIZO) thin-film transistors (TFTs) with different doping concentrations were successfully fabricated using plasma-enhanced atomic layer deposition (PEALD). Specifically, TiIZO TFTs with Ti cation doping concentration of 0.5% using tetra (dimethylamino) titanium (TDMATi) exhibited a high field-effect mobility of 51.22 cm2/Vs and a small subthreshold swing (SS) of 0.24 V/decade. Furthermore, compared to undoped IZO TFTs, TiIZO TFTs exhibited enhanced bias stability under positive and negative temperature bias stress. This improvement is attributed to the appropriate Ti doping concentration, which suppresses impurity oxygen defects, reduces the trap density at the insulator/channel interface, and introduces additional charge carriers.","PeriodicalId":13092,"journal":{"name":"IEEE Transactions on Electron Devices","volume":null,"pages":null},"PeriodicalIF":2.9000,"publicationDate":"2024-10-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"A Novel Strategy to Achieve High-Performance Titanium-Doped InZnO Thin-Film Transistors Using Atomic Layer Deposition\",\"authors\":\"Tianxing Hu;Min Li;Hua Xu;Hong Tao;Jianhua Zou;Junhong Zhou;Miao Xu;Junbiao Peng;Lei Wang\",\"doi\":\"10.1109/TED.2024.3466836\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Titanium-doped InZnO (TiIZO) thin-film transistors (TFTs) with different doping concentrations were successfully fabricated using plasma-enhanced atomic layer deposition (PEALD). Specifically, TiIZO TFTs with Ti cation doping concentration of 0.5% using tetra (dimethylamino) titanium (TDMATi) exhibited a high field-effect mobility of 51.22 cm2/Vs and a small subthreshold swing (SS) of 0.24 V/decade. Furthermore, compared to undoped IZO TFTs, TiIZO TFTs exhibited enhanced bias stability under positive and negative temperature bias stress. This improvement is attributed to the appropriate Ti doping concentration, which suppresses impurity oxygen defects, reduces the trap density at the insulator/channel interface, and introduces additional charge carriers.\",\"PeriodicalId\":13092,\"journal\":{\"name\":\"IEEE Transactions on Electron Devices\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":2.9000,\"publicationDate\":\"2024-10-07\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"IEEE Transactions on Electron Devices\",\"FirstCategoryId\":\"5\",\"ListUrlMain\":\"https://ieeexplore.ieee.org/document/10706079/\",\"RegionNum\":2,\"RegionCategory\":\"工程技术\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q2\",\"JCRName\":\"ENGINEERING, ELECTRICAL & ELECTRONIC\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE Transactions on Electron Devices","FirstCategoryId":"5","ListUrlMain":"https://ieeexplore.ieee.org/document/10706079/","RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
A Novel Strategy to Achieve High-Performance Titanium-Doped InZnO Thin-Film Transistors Using Atomic Layer Deposition
Titanium-doped InZnO (TiIZO) thin-film transistors (TFTs) with different doping concentrations were successfully fabricated using plasma-enhanced atomic layer deposition (PEALD). Specifically, TiIZO TFTs with Ti cation doping concentration of 0.5% using tetra (dimethylamino) titanium (TDMATi) exhibited a high field-effect mobility of 51.22 cm2/Vs and a small subthreshold swing (SS) of 0.24 V/decade. Furthermore, compared to undoped IZO TFTs, TiIZO TFTs exhibited enhanced bias stability under positive and negative temperature bias stress. This improvement is attributed to the appropriate Ti doping concentration, which suppresses impurity oxygen defects, reduces the trap density at the insulator/channel interface, and introduces additional charge carriers.
期刊介绍:
IEEE Transactions on Electron Devices publishes original and significant contributions relating to the theory, modeling, design, performance and reliability of electron and ion integrated circuit devices and interconnects, involving insulators, metals, organic materials, micro-plasmas, semiconductors, quantum-effect structures, vacuum devices, and emerging materials with applications in bioelectronics, biomedical electronics, computation, communications, displays, microelectromechanics, imaging, micro-actuators, nanoelectronics, optoelectronics, photovoltaics, power ICs and micro-sensors. Tutorial and review papers on these subjects are also published and occasional special issues appear to present a collection of papers which treat particular areas in more depth and breadth.