利用原子层沉积实现高性能掺钛 InZnO 薄膜晶体管的新策略

IF 2.9 2区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC IEEE Transactions on Electron Devices Pub Date : 2024-10-07 DOI:10.1109/TED.2024.3466836
Tianxing Hu;Min Li;Hua Xu;Hong Tao;Jianhua Zou;Junhong Zhou;Miao Xu;Junbiao Peng;Lei Wang
{"title":"利用原子层沉积实现高性能掺钛 InZnO 薄膜晶体管的新策略","authors":"Tianxing Hu;Min Li;Hua Xu;Hong Tao;Jianhua Zou;Junhong Zhou;Miao Xu;Junbiao Peng;Lei Wang","doi":"10.1109/TED.2024.3466836","DOIUrl":null,"url":null,"abstract":"Titanium-doped InZnO (TiIZO) thin-film transistors (TFTs) with different doping concentrations were successfully fabricated using plasma-enhanced atomic layer deposition (PEALD). Specifically, TiIZO TFTs with Ti cation doping concentration of 0.5% using tetra (dimethylamino) titanium (TDMATi) exhibited a high field-effect mobility of 51.22 cm2/Vs and a small subthreshold swing (SS) of 0.24 V/decade. Furthermore, compared to undoped IZO TFTs, TiIZO TFTs exhibited enhanced bias stability under positive and negative temperature bias stress. This improvement is attributed to the appropriate Ti doping concentration, which suppresses impurity oxygen defects, reduces the trap density at the insulator/channel interface, and introduces additional charge carriers.","PeriodicalId":13092,"journal":{"name":"IEEE Transactions on Electron Devices","volume":"71 11","pages":"6774-6780"},"PeriodicalIF":2.9000,"publicationDate":"2024-10-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"A Novel Strategy to Achieve High-Performance Titanium-Doped InZnO Thin-Film Transistors Using Atomic Layer Deposition\",\"authors\":\"Tianxing Hu;Min Li;Hua Xu;Hong Tao;Jianhua Zou;Junhong Zhou;Miao Xu;Junbiao Peng;Lei Wang\",\"doi\":\"10.1109/TED.2024.3466836\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Titanium-doped InZnO (TiIZO) thin-film transistors (TFTs) with different doping concentrations were successfully fabricated using plasma-enhanced atomic layer deposition (PEALD). Specifically, TiIZO TFTs with Ti cation doping concentration of 0.5% using tetra (dimethylamino) titanium (TDMATi) exhibited a high field-effect mobility of 51.22 cm2/Vs and a small subthreshold swing (SS) of 0.24 V/decade. Furthermore, compared to undoped IZO TFTs, TiIZO TFTs exhibited enhanced bias stability under positive and negative temperature bias stress. This improvement is attributed to the appropriate Ti doping concentration, which suppresses impurity oxygen defects, reduces the trap density at the insulator/channel interface, and introduces additional charge carriers.\",\"PeriodicalId\":13092,\"journal\":{\"name\":\"IEEE Transactions on Electron Devices\",\"volume\":\"71 11\",\"pages\":\"6774-6780\"},\"PeriodicalIF\":2.9000,\"publicationDate\":\"2024-10-07\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"IEEE Transactions on Electron Devices\",\"FirstCategoryId\":\"5\",\"ListUrlMain\":\"https://ieeexplore.ieee.org/document/10706079/\",\"RegionNum\":2,\"RegionCategory\":\"工程技术\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q2\",\"JCRName\":\"ENGINEERING, ELECTRICAL & ELECTRONIC\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE Transactions on Electron Devices","FirstCategoryId":"5","ListUrlMain":"https://ieeexplore.ieee.org/document/10706079/","RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
引用次数: 0

摘要

利用等离子体增强原子层沉积(PEALD)技术成功制备了不同掺杂浓度的钛掺杂InZnO(TiIZO)薄膜晶体管(TFT)。具体来说,使用四(二甲基氨基)钛(TDMATi)掺杂钛阳离子浓度为 0.5%的 TiIZO TFT 具有 51.22 cm2/Vs 的高场效应迁移率和 0.24 V/decade 的小亚阈值波动(SS)。此外,与未掺杂的 IZO TFT 相比,TiIZO TFT 在正负温度偏压应力下表现出更强的偏压稳定性。这种改善归功于适当的钛掺杂浓度,它抑制了杂质氧缺陷,降低了绝缘体/沟道界面的陷阱密度,并引入了额外的电荷载流子。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
查看原文
分享 分享
微信好友 朋友圈 QQ好友 复制链接
本刊更多论文
A Novel Strategy to Achieve High-Performance Titanium-Doped InZnO Thin-Film Transistors Using Atomic Layer Deposition
Titanium-doped InZnO (TiIZO) thin-film transistors (TFTs) with different doping concentrations were successfully fabricated using plasma-enhanced atomic layer deposition (PEALD). Specifically, TiIZO TFTs with Ti cation doping concentration of 0.5% using tetra (dimethylamino) titanium (TDMATi) exhibited a high field-effect mobility of 51.22 cm2/Vs and a small subthreshold swing (SS) of 0.24 V/decade. Furthermore, compared to undoped IZO TFTs, TiIZO TFTs exhibited enhanced bias stability under positive and negative temperature bias stress. This improvement is attributed to the appropriate Ti doping concentration, which suppresses impurity oxygen defects, reduces the trap density at the insulator/channel interface, and introduces additional charge carriers.
求助全文
通过发布文献求助,成功后即可免费获取论文全文。 去求助
来源期刊
IEEE Transactions on Electron Devices
IEEE Transactions on Electron Devices 工程技术-工程:电子与电气
CiteScore
5.80
自引率
16.10%
发文量
937
审稿时长
3.8 months
期刊介绍: IEEE Transactions on Electron Devices publishes original and significant contributions relating to the theory, modeling, design, performance and reliability of electron and ion integrated circuit devices and interconnects, involving insulators, metals, organic materials, micro-plasmas, semiconductors, quantum-effect structures, vacuum devices, and emerging materials with applications in bioelectronics, biomedical electronics, computation, communications, displays, microelectromechanics, imaging, micro-actuators, nanoelectronics, optoelectronics, photovoltaics, power ICs and micro-sensors. Tutorial and review papers on these subjects are also published and occasional special issues appear to present a collection of papers which treat particular areas in more depth and breadth.
期刊最新文献
Table of Contents Special Issue on Intelligent Sensor Systems for the IEEE Journal of Electron Devices Corrections to “Electron Emission Regimes of Planar Nano Vacuum Emitters” IEEE Open Access Publishing IEEE ELECTRON DEVICES SOCIETY
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
0
微信
客服QQ
Book学术公众号 扫码关注我们
反馈
×
意见反馈
请填写您的意见或建议
请填写您的手机或邮箱
已复制链接
已复制链接
快去分享给好友吧!
我知道了
×
扫码分享
扫码分享
Book学术官方微信
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术
文献互助 智能选刊 最新文献 互助须知 联系我们:info@booksci.cn
Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。
Copyright © 2023 Book学术 All rights reserved.
ghs 京公网安备 11010802042870号 京ICP备2023020795号-1