Hsiao-Hsuan Wan, Chao-Ching Chiang, Jian-Sian Li, Fan Ren, Fikadu Alema, Andrei Osinsky, Valentin Craciun, Stephen J. Pearton
{"title":"(Al0.18Ga0.82)2O3上 Ti/Au、Ni/Au 和 Sc/Au 欧姆接触金属叠层的比较","authors":"Hsiao-Hsuan Wan, Chao-Ching Chiang, Jian-Sian Li, Fan Ren, Fikadu Alema, Andrei Osinsky, Valentin Craciun, Stephen J. Pearton","doi":"10.1007/s10853-024-10330-2","DOIUrl":null,"url":null,"abstract":"<div><p>Three different metal stacks, namely Ti/Au, Ni/Au and Sc/Au, were examined as Ohmic metal contacts to Si-doped, n-type (4.1 × 10<sup>19</sup> cm<sup>−3</sup>), 300-nm thick (Al<sub>0.18</sub>Ga<sub>0.82</sub>)<sub>2</sub>O<sub>3</sub> layers grown by metal-organic chemical vapor deposition. This is a typical composition used for (Al<sub><i>x</i></sub>Ga<sub>1-<i>x</i></sub>)<sub>2</sub>O<sub>3</sub> /Ga<sub>2</sub>O<sub>3</sub> heterostructure field effect transistors. The effects of postdepositional annealing (300–475 °C) were examined through circular transfer length method (CTLM) measurements to determine both the transfer resistance and specific contact resistivity. The lowest resistances were achieved with Ti/Au, with specific contact resistivity 1.2 × 10<sup>–4</sup> Ω·cm<sup>2</sup> and transfer resistance 3.82 Ω·mm for as-deposited contacts. Annealing was found to degrade both of these resistances in all cases from the as-deposited values, even though the AGO sheet resistance decreased slightly, from 1191 Ω/□ to 905 Ω/□ after annealing at 475 °C. The temperature dependence of specific contact resistivity is also investigated.</p></div>","PeriodicalId":645,"journal":{"name":"Journal of Materials Science","volume":"59 40","pages":"19152 - 19160"},"PeriodicalIF":3.5000,"publicationDate":"2024-10-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://link.springer.com/content/pdf/10.1007/s10853-024-10330-2.pdf","citationCount":"0","resultStr":"{\"title\":\"Comparison of Ti/Au, Ni/Au, and Sc/Au ohmic contact metal stacks on (Al0.18Ga0.82)2O3\",\"authors\":\"Hsiao-Hsuan Wan, Chao-Ching Chiang, Jian-Sian Li, Fan Ren, Fikadu Alema, Andrei Osinsky, Valentin Craciun, Stephen J. Pearton\",\"doi\":\"10.1007/s10853-024-10330-2\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<div><p>Three different metal stacks, namely Ti/Au, Ni/Au and Sc/Au, were examined as Ohmic metal contacts to Si-doped, n-type (4.1 × 10<sup>19</sup> cm<sup>−3</sup>), 300-nm thick (Al<sub>0.18</sub>Ga<sub>0.82</sub>)<sub>2</sub>O<sub>3</sub> layers grown by metal-organic chemical vapor deposition. This is a typical composition used for (Al<sub><i>x</i></sub>Ga<sub>1-<i>x</i></sub>)<sub>2</sub>O<sub>3</sub> /Ga<sub>2</sub>O<sub>3</sub> heterostructure field effect transistors. The effects of postdepositional annealing (300–475 °C) were examined through circular transfer length method (CTLM) measurements to determine both the transfer resistance and specific contact resistivity. The lowest resistances were achieved with Ti/Au, with specific contact resistivity 1.2 × 10<sup>–4</sup> Ω·cm<sup>2</sup> and transfer resistance 3.82 Ω·mm for as-deposited contacts. Annealing was found to degrade both of these resistances in all cases from the as-deposited values, even though the AGO sheet resistance decreased slightly, from 1191 Ω/□ to 905 Ω/□ after annealing at 475 °C. The temperature dependence of specific contact resistivity is also investigated.</p></div>\",\"PeriodicalId\":645,\"journal\":{\"name\":\"Journal of Materials Science\",\"volume\":\"59 40\",\"pages\":\"19152 - 19160\"},\"PeriodicalIF\":3.5000,\"publicationDate\":\"2024-10-17\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"https://link.springer.com/content/pdf/10.1007/s10853-024-10330-2.pdf\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Journal of Materials Science\",\"FirstCategoryId\":\"88\",\"ListUrlMain\":\"https://link.springer.com/article/10.1007/s10853-024-10330-2\",\"RegionNum\":3,\"RegionCategory\":\"材料科学\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q2\",\"JCRName\":\"MATERIALS SCIENCE, MULTIDISCIPLINARY\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Journal of Materials Science","FirstCategoryId":"88","ListUrlMain":"https://link.springer.com/article/10.1007/s10853-024-10330-2","RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"MATERIALS SCIENCE, MULTIDISCIPLINARY","Score":null,"Total":0}
Comparison of Ti/Au, Ni/Au, and Sc/Au ohmic contact metal stacks on (Al0.18Ga0.82)2O3
Three different metal stacks, namely Ti/Au, Ni/Au and Sc/Au, were examined as Ohmic metal contacts to Si-doped, n-type (4.1 × 1019 cm−3), 300-nm thick (Al0.18Ga0.82)2O3 layers grown by metal-organic chemical vapor deposition. This is a typical composition used for (AlxGa1-x)2O3 /Ga2O3 heterostructure field effect transistors. The effects of postdepositional annealing (300–475 °C) were examined through circular transfer length method (CTLM) measurements to determine both the transfer resistance and specific contact resistivity. The lowest resistances were achieved with Ti/Au, with specific contact resistivity 1.2 × 10–4 Ω·cm2 and transfer resistance 3.82 Ω·mm for as-deposited contacts. Annealing was found to degrade both of these resistances in all cases from the as-deposited values, even though the AGO sheet resistance decreased slightly, from 1191 Ω/□ to 905 Ω/□ after annealing at 475 °C. The temperature dependence of specific contact resistivity is also investigated.
期刊介绍：
The Journal of Materials Science publishes reviews, full-length papers, and short Communications recording original research results on, or techniques for studying the relationship between structure, properties, and uses of materials. The subjects are seen from international and interdisciplinary perspectives covering areas including metals, ceramics, glasses, polymers, electrical materials, composite materials, fibers, nanostructured materials, nanocomposites, and biological and biomedical materials. The Journal of Materials Science is now firmly established as the leading source of primary communication for scientists investigating the structure and properties of all engineering materials.
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