M 掺杂和氧空位对 α-BiNbO4 (M = Mo, W) 的电子和光催化分水特性的影响

IF 2.3 4区 化学 Q3 CHEMISTRY, PHYSICAL Catalysis Letters Pub Date : 2024-09-21 DOI:10.1007/s10562-024-04823-7
Hong Wang, Yunfei Ma, Chongyang Zhao, JinKun Bai, Kangrong Lai
{"title":"M 掺杂和氧空位对 α-BiNbO4 (M = Mo, W) 的电子和光催化分水特性的影响","authors":"Hong Wang,&nbsp;Yunfei Ma,&nbsp;Chongyang Zhao,&nbsp;JinKun Bai,&nbsp;Kangrong Lai","doi":"10.1007/s10562-024-04823-7","DOIUrl":null,"url":null,"abstract":"<div><p>Based on the first-principles density-functional theory, formation energies, transition energy levels of M (M = Mo, W) doped α-BiNbO<sub>4</sub> systems are studied. The calculation results show that the donor defects form easily under Bi-rich condition. Of these, the W<sub>int</sub> (W interstitial) and Mo<sub>int</sub> (Mo interstitial) are the two main defects that lead to n-type conductivity. Then, the electronic structures of M-mono-doped and M/O<sub>vac</sub> (O vacancy)-codoped α-BiNbO<sub>4</sub> were investigated. Our results show that the band gap of W<sub>int</sub>/O<sub>vac</sub>-codoped α-BiNbO<sub>4</sub> is reduced by 0.43 eV, and the conduction band minimum and valence band maximum are reduced by 0.20 and 0.23 eV, respectively, compared to pure α-BiNbO<sub>4</sub>, with less driving force required for the redox reaction process and then an increased redox rate. The α-BiNbO<sub>4</sub> with W<sub>int</sub>+O<sub>vac</sub> defects with n-type conductivity has good photocatalytic activity in water splitting.</p><h3>Graphical Abstract</h3>\n<div><figure><div><div><picture><source><img></source></picture></div></div></figure></div></div>","PeriodicalId":508,"journal":{"name":"Catalysis Letters","volume":null,"pages":null},"PeriodicalIF":2.3000,"publicationDate":"2024-09-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Effects of M-Doping and Oxygen Vacancy on the Electronic and Photocatalytic Water-Splitting Properties of α-BiNbO4 (M = Mo, W)\",\"authors\":\"Hong Wang,&nbsp;Yunfei Ma,&nbsp;Chongyang Zhao,&nbsp;JinKun Bai,&nbsp;Kangrong Lai\",\"doi\":\"10.1007/s10562-024-04823-7\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<div><p>Based on the first-principles density-functional theory, formation energies, transition energy levels of M (M = Mo, W) doped α-BiNbO<sub>4</sub> systems are studied. The calculation results show that the donor defects form easily under Bi-rich condition. Of these, the W<sub>int</sub> (W interstitial) and Mo<sub>int</sub> (Mo interstitial) are the two main defects that lead to n-type conductivity. Then, the electronic structures of M-mono-doped and M/O<sub>vac</sub> (O vacancy)-codoped α-BiNbO<sub>4</sub> were investigated. Our results show that the band gap of W<sub>int</sub>/O<sub>vac</sub>-codoped α-BiNbO<sub>4</sub> is reduced by 0.43 eV, and the conduction band minimum and valence band maximum are reduced by 0.20 and 0.23 eV, respectively, compared to pure α-BiNbO<sub>4</sub>, with less driving force required for the redox reaction process and then an increased redox rate. The α-BiNbO<sub>4</sub> with W<sub>int</sub>+O<sub>vac</sub> defects with n-type conductivity has good photocatalytic activity in water splitting.</p><h3>Graphical Abstract</h3>\\n<div><figure><div><div><picture><source><img></source></picture></div></div></figure></div></div>\",\"PeriodicalId\":508,\"journal\":{\"name\":\"Catalysis Letters\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":2.3000,\"publicationDate\":\"2024-09-21\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Catalysis Letters\",\"FirstCategoryId\":\"92\",\"ListUrlMain\":\"https://link.springer.com/article/10.1007/s10562-024-04823-7\",\"RegionNum\":4,\"RegionCategory\":\"化学\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q3\",\"JCRName\":\"CHEMISTRY, PHYSICAL\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Catalysis Letters","FirstCategoryId":"92","ListUrlMain":"https://link.springer.com/article/10.1007/s10562-024-04823-7","RegionNum":4,"RegionCategory":"化学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"CHEMISTRY, PHYSICAL","Score":null,"Total":0}
引用次数: 0

摘要

基于第一原理密度泛函理论,研究了掺杂 M(M = Mo、W)的 α-BiNbO4 体系的形成能和转变能级。计算结果表明,在富铋条件下很容易形成供体缺陷。其中,Wint(W 间隙)和 Moint(Mo 间隙)是导致 n 型导电性的两个主要缺陷。然后,研究了掺杂 M 单质和掺杂 M/Ovac(O 空位)的 α-BiNbO4 的电子结构。结果表明,与纯α-BiNbO4相比,Wint/Ovac-掺杂的α-BiNbO4带隙减小了0.43 eV,导带最小值和价带最大值分别减小了0.20 eV和0.23 eV,氧化还原反应过程所需的驱动力减少,氧化还原速率提高。具有 Wint+Ovac 缺陷的 n 型导电性 α-BiNbO4 在水分离方面具有良好的光催化活性。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
查看原文
分享 分享
微信好友 朋友圈 QQ好友 复制链接
本刊更多论文
Effects of M-Doping and Oxygen Vacancy on the Electronic and Photocatalytic Water-Splitting Properties of α-BiNbO4 (M = Mo, W)

Based on the first-principles density-functional theory, formation energies, transition energy levels of M (M = Mo, W) doped α-BiNbO4 systems are studied. The calculation results show that the donor defects form easily under Bi-rich condition. Of these, the Wint (W interstitial) and Moint (Mo interstitial) are the two main defects that lead to n-type conductivity. Then, the electronic structures of M-mono-doped and M/Ovac (O vacancy)-codoped α-BiNbO4 were investigated. Our results show that the band gap of Wint/Ovac-codoped α-BiNbO4 is reduced by 0.43 eV, and the conduction band minimum and valence band maximum are reduced by 0.20 and 0.23 eV, respectively, compared to pure α-BiNbO4, with less driving force required for the redox reaction process and then an increased redox rate. The α-BiNbO4 with Wint+Ovac defects with n-type conductivity has good photocatalytic activity in water splitting.

Graphical Abstract

求助全文
通过发布文献求助,成功后即可免费获取论文全文。 去求助
来源期刊
Catalysis Letters
Catalysis Letters 化学-物理化学
CiteScore
5.70
自引率
3.60%
发文量
327
审稿时长
1 months
期刊介绍: Catalysis Letters aim is the rapid publication of outstanding and high-impact original research articles in catalysis. The scope of the journal covers a broad range of topics in all fields of both applied and theoretical catalysis, including heterogeneous, homogeneous and biocatalysis. The high-quality original research articles published in Catalysis Letters are subject to rigorous peer review. Accepted papers are published online first and subsequently in print issues. All contributions must include a graphical abstract. Manuscripts should be written in English and the responsibility lies with the authors to ensure that they are grammatically and linguistically correct. Authors for whom English is not the working language are encouraged to consider using a professional language-editing service before submitting their manuscripts.
期刊最新文献
Employment of Magnetic Poly(Styrene-co-Triethylene Gycol Dimethacrylate) as an Immobilization Matrix for Lipase G: Application of Hexyl Oleate Synthesis and Kinetic Study Construction of Magnetically Retrievable g-C3N4/CeO2-Fe3O4-Reduced Graphene Oxide Composites With Enhanced Visible-Light Photocatalytic Activity And Antibacterial Properties Construction and Characterization of Magnetic Fe3O4 Nanoparticles Supported Palladium Complex: Research on Synthesis of Aryl Nitriles and Tetrazoles Effect of Ga-Promoted on Ni/Zr + Al2O3 Catalysts for Enhanced CO2 Reforming and Process Optimization Correction to: Insight into the Interaction of PerovskiteLike Surfaces (LaMnO3 and LaCoO3) with Ar, H2, CO, and O2 through NAPXPS Analysis
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
0
微信
客服QQ
Book学术公众号 扫码关注我们
反馈
×
意见反馈
请填写您的意见或建议
请填写您的手机或邮箱
已复制链接
已复制链接
快去分享给好友吧!
我知道了
×
扫码分享
扫码分享
Book学术官方微信
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术
文献互助 智能选刊 最新文献 互助须知 联系我们:info@booksci.cn
Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。
Copyright © 2023 Book学术 All rights reserved.
ghs 京公网安备 11010802042870号 京ICP备2023020795号-1