{"title":"使用高质量 Al₀.₈Sc₀.₂N 薄膜制作的高优越性 4.5 GHz 固体安装谐振器","authors":"Zekai Wang;Yao Cai;Tingting Yang;Binghui Lin;Yaxin Wang;Yuqi Ren;Yupeng Zheng;Shizhao Wang;Yan Liu;Chengliang Sun","doi":"10.1109/LED.2024.3465567","DOIUrl":null,"url":null,"abstract":"How to simultaneously achieve a high effective electromechanical coupling coefficient and a high Q value for solidly mounted resonator (SMR) has become a key technical problem in filter applications. In this study, a new process flow for SMR devices using a wafer bonding technology is proposed. Based on this method, high-quality Al0.8 Sc0.2 N piezoelectric film grown on the metal-organic chemical vapor deposition (MOCVD) AlN buffer layer was successfully applied to fabricate SMR. A 4.5 GHz SMR resonator was demonstrated with an effective electromechanical coupling coefficient \n<inline-formula> <tex-math>$({k}_{\\textit {eff}}^{{2}})$ </tex-math></inline-formula>\n of 12.27%, a Qp of 1009, and the figure of merit (FOM) up to 123. The better performance originated from the high-quality piezoelectric films enable SMR to be more widely used in various radio-frequency fields.","PeriodicalId":13198,"journal":{"name":"IEEE Electron Device Letters","volume":"45 11","pages":"2229-2232"},"PeriodicalIF":4.1000,"publicationDate":"2024-09-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"High Figure of Merit 4.5 GHz Solidly Mounted Resonator Fabricated Using High-Quality Al₀.₈Sc₀.₂N Films\",\"authors\":\"Zekai Wang;Yao Cai;Tingting Yang;Binghui Lin;Yaxin Wang;Yuqi Ren;Yupeng Zheng;Shizhao Wang;Yan Liu;Chengliang Sun\",\"doi\":\"10.1109/LED.2024.3465567\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"How to simultaneously achieve a high effective electromechanical coupling coefficient and a high Q value for solidly mounted resonator (SMR) has become a key technical problem in filter applications. In this study, a new process flow for SMR devices using a wafer bonding technology is proposed. Based on this method, high-quality Al0.8 Sc0.2 N piezoelectric film grown on the metal-organic chemical vapor deposition (MOCVD) AlN buffer layer was successfully applied to fabricate SMR. A 4.5 GHz SMR resonator was demonstrated with an effective electromechanical coupling coefficient \\n<inline-formula> <tex-math>$({k}_{\\\\textit {eff}}^{{2}})$ </tex-math></inline-formula>\\n of 12.27%, a Qp of 1009, and the figure of merit (FOM) up to 123. The better performance originated from the high-quality piezoelectric films enable SMR to be more widely used in various radio-frequency fields.\",\"PeriodicalId\":13198,\"journal\":{\"name\":\"IEEE Electron Device Letters\",\"volume\":\"45 11\",\"pages\":\"2229-2232\"},\"PeriodicalIF\":4.1000,\"publicationDate\":\"2024-09-23\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"IEEE Electron Device Letters\",\"FirstCategoryId\":\"5\",\"ListUrlMain\":\"https://ieeexplore.ieee.org/document/10685477/\",\"RegionNum\":2,\"RegionCategory\":\"工程技术\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q2\",\"JCRName\":\"ENGINEERING, ELECTRICAL & ELECTRONIC\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE Electron Device Letters","FirstCategoryId":"5","ListUrlMain":"https://ieeexplore.ieee.org/document/10685477/","RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
High Figure of Merit 4.5 GHz Solidly Mounted Resonator Fabricated Using High-Quality Al₀.₈Sc₀.₂N Films
How to simultaneously achieve a high effective electromechanical coupling coefficient and a high Q value for solidly mounted resonator (SMR) has become a key technical problem in filter applications. In this study, a new process flow for SMR devices using a wafer bonding technology is proposed. Based on this method, high-quality Al0.8 Sc0.2 N piezoelectric film grown on the metal-organic chemical vapor deposition (MOCVD) AlN buffer layer was successfully applied to fabricate SMR. A 4.5 GHz SMR resonator was demonstrated with an effective electromechanical coupling coefficient
$({k}_{\textit {eff}}^{{2}})$
of 12.27%, a Qp of 1009, and the figure of merit (FOM) up to 123. The better performance originated from the high-quality piezoelectric films enable SMR to be more widely used in various radio-frequency fields.
期刊介绍：
IEEE Electron Device Letters publishes original and significant contributions relating to the theory, modeling, design, performance and reliability of electron and ion integrated circuit devices and interconnects, involving insulators, metals, organic materials, micro-plasmas, semiconductors, quantum-effect structures, vacuum devices, and emerging materials with applications in bioelectronics, biomedical electronics, computation, communications, displays, microelectromechanics, imaging, micro-actuators, nanoelectronics, optoelectronics, photovoltaics, power ICs and micro-sensors.
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