辐照温度对 Li2ZrO3 陶瓷受损层中结构缺陷和空位缺陷迁移率的影响

Q2 Engineering Optical Materials: X Pub Date : 2024-10-16 DOI:10.1016/j.omx.2024.100376
Bauyrzhan K. Abyshev , Sholpan G. Giniyatova , Artem L. Kozlovskiy
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引用次数: 0

摘要

本文介绍了辐照温度对氦离子辐照 Li2ZrO3 陶瓷近表面层所引起的结构缺陷类型变化的影响的评估结果,以及在辐照通量变化的情况下使用电子顺磁共振方法确定结构损伤的性质。在表征氦离子辐照引起的结构变化时,主要关注辐照过程中产生的结构缺陷和放射性分解产物的类型,以及利用电子顺磁共振法确定其浓度变化。在实验过程中,观察到氦离子辐照造成的受损层中空位缺陷的热刺激迁移效应,这表明在低通量辐照过程中样品的热加热具有积极作用。这种效应包括在低辐照通量(1015-1016 cm-2)下受损层中氧空位数量的下降,氧空位的浓度是用 EPR 方法测定的,在辐照温度升高的情况下,在低辐照通量下观察到的结构变化与转化能过程引起的陶瓷晶体结构变形扭曲和热膨胀效应有关。
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Effect of irradiation temperature on the mobility of structural and vacancy defects in the damaged layer of Li2ZrO3 ceramics
The paper presents the assessment results of the irradiation temperature effect on the change in the type of structural defects caused by irradiation with helium ions in the near-surface layer of Li2ZrO3 ceramics, as well as determining the nature of structural damage using the electron paramagnetic resonance method in the case of irradiation fluence variation. During characterization of the structural changes caused by helium ion irradiation, the main attention was paid to detailing the type of structural defects and radiolysis products arising during irradiation, alongside alterations in their concentration using the electron paramagnetic resonance method. During the experiments, it was determined that the observed effects of thermally stimulated mobility of vacancy defects in the damaged layer caused by irradiation with helium ions indicate a positive effect of thermal heating of samples during irradiation at low fluences. This effect consists in a decline in the number of oxygen vacancies in the damaged layer at low irradiation fluences (1015–1016 cm−2), the concentration of which was determined using the EPR method, and the observed structural changes at low irradiation fluences in the case of an elevation in irradiation temperatures are associated with deformation distortion of the crystalline structure of ceramics caused by transformation energy processes, and thermal expansion effects.
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来源期刊
Optical Materials: X
Optical Materials: X Engineering-Electrical and Electronic Engineering
CiteScore
3.30
自引率
0.00%
发文量
73
审稿时长
91 days
期刊最新文献
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