基于模拟阳光活化的金装饰氧化锌纳米结构材料在快速乙醇检测中的气敏协同效应

IF 4.2 3区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC Materials Science in Semiconductor Processing Pub Date : 2024-10-22 DOI:10.1016/j.mssp.2024.109028
Hai Yu , Tao Jiang , Xiaoqi Yu , Ying Qi
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引用次数: 0

摘要

局部表面等离子体共振(LSPR)和贵金属修饰/掺杂是提高基于金属氧化物半导体(MOS)的气体传感器性能的经典方法。然而,人们对它们的协同作用关注相对较少。特别是,将阳光活化与其他方法相结合的协同气体传感技术研究对于利用友好型能源具有重要意义。本研究采用经济有效的纳米种子辅助化学浴和紫外线照射生长方法,成功合成了金装饰氧化锌(Au/ZnO)纳米结构材料(NMs)。基于这种材料的传感器在模拟阳光下的乙醇蒸汽中表现出卓越的性能,在较低的最佳工作温度下仍能保持高灵敏度和可重复性。特别是,在模拟阳光下,对 100 ppm 乙醇的灵敏度比黑暗环境下提高了 7.5 倍,响应时间缩短了 20 倍(tres < 1 s)。乙醇的检测限(LOD)低至 97 ppb,远低于中国法律规定的酒后驾车呼气浓度(20-80 ppm)。该研究提供了一种可靠、超快速的乙醇检测方法,有望应用于环境监测和交通安全领域。基于模拟阳光活化(LSPR、耐湿性和热活化)和贵金属修饰(电子敏化和化学敏化)之间的协同效应,提出了金/氧化锌乙醇蒸汽传感器的可能气敏机理。它为探索利用阳光进行快速气体检测提供了一种可行的方法。
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Gas-sensitive synergistic effect of Au-decorated ZnO nano-structured materials for rapid ethanol detection based on simulated sunlight activation
Local surface plasmon resonance (LSPR) and noble metal modification/doping are classical methods for improving the performance of metal-oxide-semiconductor (MOS)-based gas sensors. However, relatively less attention is paid to their synergies. In particular, research on synergistic gas-sensing technology that combines sunlight activation with other methods is significant for using friendly energy. In this study, Au-decorated ZnO (Au/ZnO) nano-structured materials (NMs) are successfully synthesised using a cost-effective nano-seed-assisted chemical bath and UV irradiation growth methods. The sensor based on this material exhibits superior performance in ethanol vapour under simulated sunlight, maintaining high sensitivity and repeatability at a low optimal working temperature. In particular, the sensitivity to 100 ppm of ethanol is 7.5 times better and the response time is 20 times shorter (tres < 1 s) in simulated sunlight than in the dark environment. The limit of detection (LOD) of ethanol is as low as 97 ppb, which is much lower than the concentration in exhaled breath of driving under the influence of alcohol according to Chinese law (20–80 ppm). This study provides a reliable and ultra-fast ethanol detection method, with potential applications in environmental monitoring and traffic safety. A possible gas-sensitive mechanism of the Au/ZnO ethanol vapour sensor is proposed based on the synergistic effect between simulated sunlight activation (LSPR, humidity resistance and thermal activation) and noble metal modification (electron sensitisation and chemical sensitisation). It provides a promising method for exploring the utilisation of sunlight for rapid gas detection.
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来源期刊
Materials Science in Semiconductor Processing
Materials Science in Semiconductor Processing 工程技术-材料科学:综合
CiteScore
8.00
自引率
4.90%
发文量
780
审稿时长
42 days
期刊介绍: Materials Science in Semiconductor Processing provides a unique forum for the discussion of novel processing, applications and theoretical studies of functional materials and devices for (opto)electronics, sensors, detectors, biotechnology and green energy. Each issue will aim to provide a snapshot of current insights, new achievements, breakthroughs and future trends in such diverse fields as microelectronics, energy conversion and storage, communications, biotechnology, (photo)catalysis, nano- and thin-film technology, hybrid and composite materials, chemical processing, vapor-phase deposition, device fabrication, and modelling, which are the backbone of advanced semiconductor processing and applications. Coverage will include: advanced lithography for submicron devices; etching and related topics; ion implantation; damage evolution and related issues; plasma and thermal CVD; rapid thermal processing; advanced metallization and interconnect schemes; thin dielectric layers, oxidation; sol-gel processing; chemical bath and (electro)chemical deposition; compound semiconductor processing; new non-oxide materials and their applications; (macro)molecular and hybrid materials; molecular dynamics, ab-initio methods, Monte Carlo, etc.; new materials and processes for discrete and integrated circuits; magnetic materials and spintronics; heterostructures and quantum devices; engineering of the electrical and optical properties of semiconductors; crystal growth mechanisms; reliability, defect density, intrinsic impurities and defects.
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