Mitigating current crowding for enhanced reliability of AlGaN-based deep-ultraviolet LEDs through triangular island-shaped p-electrode design

Current crowding and poor reliability due to uneven current distribution are significant challenges limiting the widespread application of AlGaN-based flip-chip deep-ultraviolet (DUV) LEDs. Herein, a novel triangular island-shaped chip structure designed to mitigate current crowding and enhance device reliability. Although this structure exhibits increased leakage current due to etching damage and the reduced effective light-emitting area compared to the interdigitated structure, it demonstrates lower operating voltage and higher wall-plug efficiency at high currents. Optical emission distribution tests confirm that the triangular island-shaped structure effectively reduces current crowding and achieves uniform light emission. After 500 h of aging, the optical power retention of the triangular island-shaped structure remains at 97.6%, and the L70 lifetime, as predicted by a lifetime model, is extended by 45% compared to the interdigitated structure. These findings highlight the critical role of mitigating current crowding in improving the reliability of AlGaN-based DUV LED chip structures.