利用紫外光电子能谱测量碳结构的功函数

Saif Taqy;Pallab Sarkar;Istiaq Shiam;Subrata Karmakar;Ariful Haque
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摘要

碳基材料的功函数对于了解其电子特性至关重要,可为优化器件性能和推进电子应用提供重要见解。利用紫外光电子能谱(UPS)测量了类金刚石碳(DLC)、Q-碳和金刚石的功函数。利用脉冲激光沉积法生长出三种具有不同 sp2/sp3 含量(ID/IG 比值分别为 0.43、0.87 和 1.61)的 DLC 薄膜,随后利用脉冲激光对 DLC 薄膜进行退火处理,制备出 Q 碳薄膜。此外,金刚石薄膜是通过热丝化学气相沉积(HFCVD)沉积的。利用拉曼光谱分析了薄膜的成分,并通过拉曼光谱和扫描电子显微镜(SEM)分析确认了 Q 碳的形成。利用陶克曲线图进行的带隙测量表明,DLC 薄膜的带隙范围在 2.56 eV 至 3.77 eV 之间,而 Q 碳的带隙为 3.7 eV。功函数测量显示,DLC 薄膜的功函数值在 3.91 eV 至 4.18 eV 之间。此外,通过实验测量计算出 Q 碳的功函数为 3.82 eV,而 DFT 模拟得出的值为 3.62 eV。最后,测得金刚石薄膜的功函数为 4.54 eV。总之,研究结果揭示了结构特征与功函数之间的关系,为优化这些材料在电子和光电技术中的性能提供了宝贵的信息。
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Work Function Measurements of Carbon Structures Using Ultraviolet Photoelectron Spectroscopy
The work function of carbon-based materials is crucial in understanding the electronic properties, offering critical insights for optimizing device performance and advancing electronic applications. The work function of diamond-like carbon (DLC), Q-carbon, and diamond is measured using ultraviolet photoelectron spectroscopy (UPS). Three DLC films having different sp 2 /sp 3 content (I D /I G ratios 0.43, 0.87, and 1.61) are grown using pulsed laser deposition, and the Q-carbon films are fabricated using subsequent pulsed laser annealing of the DLC films. Moreover, the diamond films are deposited using hot filament chemical vapor deposition (HFCVD). The compositional analysis of the films is performed using Raman spectroscopy, and the formation of Q-carbon is confirmed through Raman spectroscopy and scanning electron microscopic (SEM) analysis. The bandgap measurement using the Tauc plot demonstrates the bandgap of the DLC films to range from 2.56 eV to 3.77 eV, while the bandgap of Q-carbon is measured to be 3.7 eV. The work function measurement reveals the values to range from 3.91 eV to 4.18 eV for the DLC films. Additionally, the work function of Q-carbon is calculated to be 3.82 eV from experimental measurements, while the DFT simulations provide a value of 3.62 eV. Finally, the diamond film's work function is measured at 4.54 eV. Overall, the results reveal insights into the relationship between structural characteristics and work function, providing valuable information for optimizing the performance of these materials in electronic and optoelectronic technologies.
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