Mingyu Xu, Yongbin Lee, Xianglin Ke, Min-Chul Kang, Matt Boswell, Sergey L. Bud’ko, Lin Zhou, Liqin Ke, Mingda Li, Paul C. Canfield* and Weiwei Xie*,
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引用次数: 0
摘要
磁各向异性是提高自旋电子器件性能的关键特性。通过高温溶液法合成 SmCrGe3 单晶,确定了单轴磁晶各向异性。利用扫描透射电子显微镜(STEM)、粉末和单晶 X 射线衍射技术实现了相位验证。电传输和比热测量表明居里温度 (TC) 约为 160 K,而磁化测量则用于确定各向异性场和常数。对磁化数据进行居里-魏斯拟合表明,顺磁相中的Sm和Cr都有贡献。此外,密度泛函理论(DFT)计算探索了 SmCrGe3 的电子结构和磁性能,揭示了 16 meV/fu 的显著易轴单离子 Sm 磁晶各向异性。根据磁化测量结果,20 K 时的易轴磁晶各向异性为 13 meV/fu。
Giant Uniaxial Magnetocrystalline Anisotropy in SmCrGe3
Magnetic anisotropy is a crucial characteristic for enhancing the spintronic device performance. The synthesis of SmCrGe3 single crystals through a high-temperature solution method has led to the determination of uniaxial magnetocrystalline anisotropy. Phase verification was achieved by using scanning transmission electron microscopy (STEM), powder, and single-crystal X-ray diffraction techniques. Electrical transport and specific heat measurements indicate a Curie temperature (TC) of approximately 160 K, while magnetization measurements were utilized to determine the anisotropy fields and constants. Curie–Weiss fitting applied to magnetization data suggests the contribution of both Sm and Cr in the paramagnetic phase. Additionally, density functional theory (DFT) calculations explored the electronic structures and magnetic properties of SmCrGe3, revealing a significant easy-axis single-ion Sm magnetocrystalline anisotropy of 16 meV/fu. Based on the magnetization measurements, easy-axis magnetocrystalline anisotropy at 20 K is 13 meV/fu.
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