TCAD modeling of radiation-induced defects in 4H-SiC diodes

4H silicon carbide (SiC) has several advantageous properties compared to silicon (Si) making it an appealing detector material, such as a larger charge carrier saturation velocity, bandgap, and thermal conductivity. While the current understanding of material and model parameters suffices to simulate unirradiated 4H-SiC using TCAD software, configurations accurately predicting performance degradation after high levels of irradiation due to induced traps and recombination centers do not exist. Despite increasing efforts to characterize the introduction and nature of such defects, published results are often contradictory. This work presents a bulk radiation damage model for TCAD simulation based on existing literature and optimized on measurement results of neutron-irradiated 4H-SiC pad diodes. Experimentally observed effects, such as flattening of the detector capacitance, loss of rectification properties, and degradation in charge collection efficiency, are reproduced. The EH${}_4$ center is suggested as a major lifetime killer in 4H-SiC, while the still controversial assumption of the EH${}_{\text{6,7}}$ deep-level being of donor type is reinforced.