具有 202.5 分贝/赫兹 FoMT 的 4.5 至 13.5 千兆赫单变压器四模 VCO

0 ENGINEERING, ELECTRICAL & ELECTRONIC IEEE microwave and wireless technology letters Pub Date : 2024-09-20 DOI:10.1109/LMWT.2024.3458179
Chao Fan;Ya Zhao;Ge Gao;Li Geng
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引用次数: 0

摘要

这封信报告了一种 28 纳米 CMOS 单变压器四模式压控振荡器(VCO)。特别是,我们的四模式 VCO 在基于单变压器的谐振器中集成了模式切换、磁芯切换和电感切换方法,以扩展频率调谐范围 (FTR)。因此,这种宽带振荡器可以减轻相位噪声(PN)和倍频程频率调谐范围之间的折衷,同时保持硅面积效率。拟议的四模式 VCO 的 PN 为 -136.6 dBc/Hz,峰值 FoMT 为 202.5 dBc/Hz,偏移量为 10 MHz,频率范围为 100% (4.5-13.5 GHz)。VCO 的核心面积为 0.12 mm2,整个 FTR 的耗散功率为 4.5-11.5 mW。
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A 4.5-to-13.5-GHz Single-Transformer Quad-Mode VCO With 202.5-dBc/Hz FoMT
This letter reports a single-transformer quad-mode voltage-controlled oscillator (VCO) in 28-nm CMOS. Specially, our quad-mode VCO integrates the mode-switching, core-switching, and inductor-switching approaches in a single-transformer-based resonator for frequency tuning range (FTR) extension. Thus, the wideband oscillator could mitigate the tradeoff between the phase noise (PN) and octave FTR while preserving the silicon area efficiency. The proposed quad-mode VCO scores a PN of −136.6 dBc/Hz with a superior peak FoMT of 202.5 dBc/Hz at a 10-MHz offset over a 100% FTR (4.5–13.5 GHz). The VCO occupies a core area of 0.12 mm2 and dissipates 4.5–11.5 mW across the FTR.
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