{"title":"通过侧壁离子注入提高氮化物绿色微型发光二极管的光输出功率效率","authors":"Yu-Hsiang Chang, Yuan-Chao Wang, Jian-Jang Huang","doi":"10.1002/jsid.2010","DOIUrl":null,"url":null,"abstract":"<p>Though micro-LED (light-emitting diode) displays are considered the emerging display technology, the micron-scale LED chip size encounters severe efficiency degradation that may impact the power budget of the displays. This work proposes an ion implantation method to deliberately create a high-resistivity sidewall in the InGaN/GaN green LED. Our study demonstrates that ion implantation suppresses reverse leakage current due to the mitigation of sidewall defects. For an LED mesa size of 10 × 10 μm<sup>2</sup>, optical output power density is improved by 36.2% compared to the device without implantation. Compared to a larger 100 × 100 μm<sup>2</sup> device without implantation, we achieve only 21.3% degradation of output power density under 10 A/cm<sup>2</sup> injection for a 10 × 10 μm<sup>2</sup> LED with implantation. In addition, the ion implantation method can lower the wavelength shift by reducing light emission from the region near the sidewall (where the amount of Indium [In] clustering differs from the mesa region). The results show promise in addressing the efficiency challenges of micro-LED displays by selective ion implantation.</p>","PeriodicalId":49979,"journal":{"name":"Journal of the Society for Information Display","volume":null,"pages":null},"PeriodicalIF":1.7000,"publicationDate":"2024-10-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Enhancing optical output power efficiency in nitride-based green micro light-emitting diodes by sidewall ion implantation\",\"authors\":\"Yu-Hsiang Chang, Yuan-Chao Wang, Jian-Jang Huang\",\"doi\":\"10.1002/jsid.2010\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<p>Though micro-LED (light-emitting diode) displays are considered the emerging display technology, the micron-scale LED chip size encounters severe efficiency degradation that may impact the power budget of the displays. This work proposes an ion implantation method to deliberately create a high-resistivity sidewall in the InGaN/GaN green LED. Our study demonstrates that ion implantation suppresses reverse leakage current due to the mitigation of sidewall defects. For an LED mesa size of 10 × 10 μm<sup>2</sup>, optical output power density is improved by 36.2% compared to the device without implantation. Compared to a larger 100 × 100 μm<sup>2</sup> device without implantation, we achieve only 21.3% degradation of output power density under 10 A/cm<sup>2</sup> injection for a 10 × 10 μm<sup>2</sup> LED with implantation. In addition, the ion implantation method can lower the wavelength shift by reducing light emission from the region near the sidewall (where the amount of Indium [In] clustering differs from the mesa region). The results show promise in addressing the efficiency challenges of micro-LED displays by selective ion implantation.</p>\",\"PeriodicalId\":49979,\"journal\":{\"name\":\"Journal of the Society for Information Display\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":1.7000,\"publicationDate\":\"2024-10-11\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Journal of the Society for Information Display\",\"FirstCategoryId\":\"5\",\"ListUrlMain\":\"https://onlinelibrary.wiley.com/doi/10.1002/jsid.2010\",\"RegionNum\":4,\"RegionCategory\":\"工程技术\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q3\",\"JCRName\":\"ENGINEERING, ELECTRICAL & ELECTRONIC\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Journal of the Society for Information Display","FirstCategoryId":"5","ListUrlMain":"https://onlinelibrary.wiley.com/doi/10.1002/jsid.2010","RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
引用次数: 0
摘要
虽然微型 LED(发光二极管)显示屏被认为是新兴的显示技术,但微米级 LED 芯片尺寸会导致效率严重下降,从而影响显示屏的功率预算。本研究提出了一种离子注入方法,在 InGaN/GaN 绿色 LED 中有意识地创建高电阻率侧壁。我们的研究表明,由于侧壁缺陷的减少,离子注入可抑制反向漏电流。对于 10 × 10 μm2 尺寸的 LED 中子板,光输出功率密度比未植入的器件提高了 36.2%。与未进行植入的 100 × 100 μm2 较大器件相比,在 10 A/cm2 注入条件下,进行了植入的 10 × 10 μm2 LED 的输出功率密度仅降低了 21.3%。此外,离子注入法还能通过减少侧壁附近区域(铟[In]簇的数量不同于铟[In]崮区域)的光发射来降低波长偏移。研究结果表明,选择性离子注入法有望解决微型 LED 显示屏的效率难题。
Enhancing optical output power efficiency in nitride-based green micro light-emitting diodes by sidewall ion implantation
Though micro-LED (light-emitting diode) displays are considered the emerging display technology, the micron-scale LED chip size encounters severe efficiency degradation that may impact the power budget of the displays. This work proposes an ion implantation method to deliberately create a high-resistivity sidewall in the InGaN/GaN green LED. Our study demonstrates that ion implantation suppresses reverse leakage current due to the mitigation of sidewall defects. For an LED mesa size of 10 × 10 μm2, optical output power density is improved by 36.2% compared to the device without implantation. Compared to a larger 100 × 100 μm2 device without implantation, we achieve only 21.3% degradation of output power density under 10 A/cm2 injection for a 10 × 10 μm2 LED with implantation. In addition, the ion implantation method can lower the wavelength shift by reducing light emission from the region near the sidewall (where the amount of Indium [In] clustering differs from the mesa region). The results show promise in addressing the efficiency challenges of micro-LED displays by selective ion implantation.
期刊介绍:
The Journal of the Society for Information Display publishes original works dealing with the theory and practice of information display. Coverage includes materials, devices and systems; the underlying chemistry, physics, physiology and psychology; measurement techniques, manufacturing technologies; and all aspects of the interaction between equipment and its users. Review articles are also published in all of these areas. Occasional special issues or sections consist of collections of papers on specific topical areas or collections of full length papers based in part on oral or poster presentations given at SID sponsored conferences.