减少量子阱数量可减轻 AlGaInP 基红色微型 LED 的侧壁效应

IF 6.5 1区物理与天体物理 Q1 MATERIALS SCIENCE, MULTIDISCIPLINARY ACS Photonics Pub Date : 2024-11-11 DOI:10.1021/acsphotonics.4c01278

Wenjie He, Kang Zhang, Xi Zheng, Minghua Li, Zhijie Ke, Yijun Lu, Zhong Chen, Weijie Guo

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引用次数: 0

摘要

基于 AlGaInP 的红色微型发光二极管（micro-LED）是超高分辨率显示器红色发射器的理想候选器件。然而，随着微型发光二极管尺寸的减小，侧壁缺陷对效率下降的影响变得更加明显。减少量子阱（QW）的数量可以减轻侧壁效应，并在低电流密度下提高基于 AlGaInP 的倒装芯片红色微型 LED 的外部量子效率（EQE）。在 300 K 时，具有 3 对 QW 的微型 LED 的最大 EQE 是具有 5 对 QW 的微型 LED 的 1.45 倍，而且根据高光谱显微成像，侧壁发射也有显著增强。这些改进源于采用 3 对 QW 的微型 LED 侧壁区域载流子损耗的减少和辐射重组的增强。

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Reduction in the Number of Quantum Wells Alleviates the Sidewall Effect in AlGaInP-Based Red Micro-LEDs

AlGaInP-based red micro-light-emitting diodes (micro-LEDs) act as promising candidates for red emitters of ultra-high-resolution displays. However, as the size of micro-LEDs decreases, the impact of sidewall defects on the efficiency degradation becomes more pronounced. The reduction in the number of quantum wells (QWs) can alleviate the sidewall effect and increase the external quantum efficiency (EQE) of AlGaInP-based flip-chip red micro-LEDs at a low current density. At 300 K, the maximum EQE of micro-LEDs with 3 pairs of QWs is 1.45 times those with 5 pairs, and a considerable enhancement in sidewall emission has been witnessed according to hyperspectral microscopic imaging. These improvements originate from reduced carrier loss in the sidewall region and enhanced radiative recombination in micro-LEDs with 3 pairs of QWs.

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来源期刊

ACS Photonics NANOSCIENCE & NANOTECHNOLOGY-MATERIALS SCIENCE, MULTIDISCIPLINARY

CiteScore

11.90

自引率

5.70%

发文量

438

审稿时长

2.3 months

期刊介绍： Published as soon as accepted and summarized in monthly issues, ACS Photonics will publish Research Articles, Letters, Perspectives, and Reviews, to encompass the full scope of published research in this field.