Eman Omar, Hesham H. Aly, Ola E. Hassan, Mostafa Fedawy
{"title":"基于 LTspice 模型从捕获的电流体动力喷墨记忆晶体管器件中提取优化参数的经验数学模型","authors":"Eman Omar, Hesham H. Aly, Ola E. Hassan, Mostafa Fedawy","doi":"10.1007/s10825-024-02223-z","DOIUrl":null,"url":null,"abstract":"<div><p>This research presents a simulating electrohydrodynamically (EHD) inkjet-printed memristors in LTspice environment, a popular tool for analog circuit simulation. EHD printing technique is used as one of low cost fabrication technique for fabricate flexible thin films and memristors with high precision and resolution in a scale of nanometers. Memristors are cutting-edge components for AI hardware, and they can be fabricated through various methods, including traditional semiconductor processes and printed electronics techniques. However, printed electronics fabrication based for memristor modeling accurately remains a challenge. This paper introduces a mathematical model specifically for (EHD) inkjet-printed memristors, employing empirical mathematics to ensure compatibility with LTspice. While the modeling of printed electronic devices still in the early stage—to the knowledge of the authors-this paper will discuss for the first time mathematical and Spice modeling for printed memristor. The model is validated against actual memristors with a sandwiched structure (<span>\\(\\text {Ag/ZrO}_{2}/\\text {Ag}\\)</span>), showing acceptable error percentage. It involves modifying an existing memristor model by incorporating a function that reflects the characteristics of the EHD printing process. This function is designed to capture the impact of the printing technique on various device parameters, such as width and length, with a focus on accurately modeling the width in the LTspice environment. This paper presents a developed LTspice model based on the proposed empirical mathematical model. The results are based on different sizes: 40 nm, 120 nm, 680 nm, respectively.</p></div>","PeriodicalId":620,"journal":{"name":"Journal of Computational Electronics","volume":null,"pages":null},"PeriodicalIF":2.2000,"publicationDate":"2024-09-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Empirical mathematical model based on optimized parameter extraction from captured electrohydrodynamic inkjet memristor device with LTspice model\",\"authors\":\"Eman Omar, Hesham H. Aly, Ola E. Hassan, Mostafa Fedawy\",\"doi\":\"10.1007/s10825-024-02223-z\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<div><p>This research presents a simulating electrohydrodynamically (EHD) inkjet-printed memristors in LTspice environment, a popular tool for analog circuit simulation. EHD printing technique is used as one of low cost fabrication technique for fabricate flexible thin films and memristors with high precision and resolution in a scale of nanometers. Memristors are cutting-edge components for AI hardware, and they can be fabricated through various methods, including traditional semiconductor processes and printed electronics techniques. However, printed electronics fabrication based for memristor modeling accurately remains a challenge. This paper introduces a mathematical model specifically for (EHD) inkjet-printed memristors, employing empirical mathematics to ensure compatibility with LTspice. While the modeling of printed electronic devices still in the early stage—to the knowledge of the authors-this paper will discuss for the first time mathematical and Spice modeling for printed memristor. The model is validated against actual memristors with a sandwiched structure (<span>\\\\(\\\\text {Ag/ZrO}_{2}/\\\\text {Ag}\\\\)</span>), showing acceptable error percentage. It involves modifying an existing memristor model by incorporating a function that reflects the characteristics of the EHD printing process. This function is designed to capture the impact of the printing technique on various device parameters, such as width and length, with a focus on accurately modeling the width in the LTspice environment. This paper presents a developed LTspice model based on the proposed empirical mathematical model. The results are based on different sizes: 40 nm, 120 nm, 680 nm, respectively.</p></div>\",\"PeriodicalId\":620,\"journal\":{\"name\":\"Journal of Computational Electronics\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":2.2000,\"publicationDate\":\"2024-09-27\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Journal of Computational Electronics\",\"FirstCategoryId\":\"5\",\"ListUrlMain\":\"https://link.springer.com/article/10.1007/s10825-024-02223-z\",\"RegionNum\":4,\"RegionCategory\":\"工程技术\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q3\",\"JCRName\":\"ENGINEERING, ELECTRICAL & ELECTRONIC\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Journal of Computational Electronics","FirstCategoryId":"5","ListUrlMain":"https://link.springer.com/article/10.1007/s10825-024-02223-z","RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
Empirical mathematical model based on optimized parameter extraction from captured electrohydrodynamic inkjet memristor device with LTspice model
This research presents a simulating electrohydrodynamically (EHD) inkjet-printed memristors in LTspice environment, a popular tool for analog circuit simulation. EHD printing technique is used as one of low cost fabrication technique for fabricate flexible thin films and memristors with high precision and resolution in a scale of nanometers. Memristors are cutting-edge components for AI hardware, and they can be fabricated through various methods, including traditional semiconductor processes and printed electronics techniques. However, printed electronics fabrication based for memristor modeling accurately remains a challenge. This paper introduces a mathematical model specifically for (EHD) inkjet-printed memristors, employing empirical mathematics to ensure compatibility with LTspice. While the modeling of printed electronic devices still in the early stage—to the knowledge of the authors-this paper will discuss for the first time mathematical and Spice modeling for printed memristor. The model is validated against actual memristors with a sandwiched structure (\(\text {Ag/ZrO}_{2}/\text {Ag}\)), showing acceptable error percentage. It involves modifying an existing memristor model by incorporating a function that reflects the characteristics of the EHD printing process. This function is designed to capture the impact of the printing technique on various device parameters, such as width and length, with a focus on accurately modeling the width in the LTspice environment. This paper presents a developed LTspice model based on the proposed empirical mathematical model. The results are based on different sizes: 40 nm, 120 nm, 680 nm, respectively.
期刊介绍:
he Journal of Computational Electronics brings together research on all aspects of modeling and simulation of modern electronics. This includes optical, electronic, mechanical, and quantum mechanical aspects, as well as research on the underlying mathematical algorithms and computational details. The related areas of energy conversion/storage and of molecular and biological systems, in which the thrust is on the charge transport, electronic, mechanical, and optical properties, are also covered.
In particular, we encourage manuscripts dealing with device simulation; with optical and optoelectronic systems and photonics; with energy storage (e.g. batteries, fuel cells) and harvesting (e.g. photovoltaic), with simulation of circuits, VLSI layout, logic and architecture (based on, for example, CMOS devices, quantum-cellular automata, QBITs, or single-electron transistors); with electromagnetic simulations (such as microwave electronics and components); or with molecular and biological systems. However, in all these cases, the submitted manuscripts should explicitly address the electronic properties of the relevant systems, materials, or devices and/or present novel contributions to the physical models, computational strategies, or numerical algorithms.