基于 LTspice 模型从捕获的电流体动力喷墨记忆晶体管器件中提取优化参数的经验数学模型

IF 2.2 4区 工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC Journal of Computational Electronics Pub Date : 2024-09-27 DOI:10.1007/s10825-024-02223-z
Eman Omar, Hesham H. Aly, Ola E. Hassan, Mostafa Fedawy
{"title":"基于 LTspice 模型从捕获的电流体动力喷墨记忆晶体管器件中提取优化参数的经验数学模型","authors":"Eman Omar,&nbsp;Hesham H. Aly,&nbsp;Ola E. Hassan,&nbsp;Mostafa Fedawy","doi":"10.1007/s10825-024-02223-z","DOIUrl":null,"url":null,"abstract":"<div><p>This research presents a simulating electrohydrodynamically (EHD) inkjet-printed memristors in LTspice environment, a popular tool for analog circuit simulation. EHD printing technique is used as one of low cost fabrication technique for fabricate flexible thin films and memristors with high precision and resolution in a scale of nanometers. Memristors are cutting-edge components for AI hardware, and they can be fabricated through various methods, including traditional semiconductor processes and printed electronics techniques. However, printed electronics fabrication based for memristor modeling accurately remains a challenge. This paper introduces a mathematical model specifically for (EHD) inkjet-printed memristors, employing empirical mathematics to ensure compatibility with LTspice. While the modeling of printed electronic devices still in the early stage—to the knowledge of the authors-this paper will discuss for the first time mathematical and Spice modeling for printed memristor. The model is validated against actual memristors with a sandwiched structure (<span>\\(\\text {Ag/ZrO}_{2}/\\text {Ag}\\)</span>), showing acceptable error percentage. It involves modifying an existing memristor model by incorporating a function that reflects the characteristics of the EHD printing process. This function is designed to capture the impact of the printing technique on various device parameters, such as width and length, with a focus on accurately modeling the width in the LTspice environment. This paper presents a developed LTspice model based on the proposed empirical mathematical model. The results are based on different sizes: 40 nm, 120 nm, 680 nm, respectively.</p></div>","PeriodicalId":620,"journal":{"name":"Journal of Computational Electronics","volume":"23 6","pages":"1455 - 1472"},"PeriodicalIF":2.2000,"publicationDate":"2024-09-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Empirical mathematical model based on optimized parameter extraction from captured electrohydrodynamic inkjet memristor device with LTspice model\",\"authors\":\"Eman Omar,&nbsp;Hesham H. Aly,&nbsp;Ola E. Hassan,&nbsp;Mostafa Fedawy\",\"doi\":\"10.1007/s10825-024-02223-z\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<div><p>This research presents a simulating electrohydrodynamically (EHD) inkjet-printed memristors in LTspice environment, a popular tool for analog circuit simulation. EHD printing technique is used as one of low cost fabrication technique for fabricate flexible thin films and memristors with high precision and resolution in a scale of nanometers. Memristors are cutting-edge components for AI hardware, and they can be fabricated through various methods, including traditional semiconductor processes and printed electronics techniques. However, printed electronics fabrication based for memristor modeling accurately remains a challenge. This paper introduces a mathematical model specifically for (EHD) inkjet-printed memristors, employing empirical mathematics to ensure compatibility with LTspice. While the modeling of printed electronic devices still in the early stage—to the knowledge of the authors-this paper will discuss for the first time mathematical and Spice modeling for printed memristor. The model is validated against actual memristors with a sandwiched structure (<span>\\\\(\\\\text {Ag/ZrO}_{2}/\\\\text {Ag}\\\\)</span>), showing acceptable error percentage. It involves modifying an existing memristor model by incorporating a function that reflects the characteristics of the EHD printing process. This function is designed to capture the impact of the printing technique on various device parameters, such as width and length, with a focus on accurately modeling the width in the LTspice environment. This paper presents a developed LTspice model based on the proposed empirical mathematical model. The results are based on different sizes: 40 nm, 120 nm, 680 nm, respectively.</p></div>\",\"PeriodicalId\":620,\"journal\":{\"name\":\"Journal of Computational Electronics\",\"volume\":\"23 6\",\"pages\":\"1455 - 1472\"},\"PeriodicalIF\":2.2000,\"publicationDate\":\"2024-09-27\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Journal of Computational Electronics\",\"FirstCategoryId\":\"5\",\"ListUrlMain\":\"https://link.springer.com/article/10.1007/s10825-024-02223-z\",\"RegionNum\":4,\"RegionCategory\":\"工程技术\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q3\",\"JCRName\":\"ENGINEERING, ELECTRICAL & ELECTRONIC\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Journal of Computational Electronics","FirstCategoryId":"5","ListUrlMain":"https://link.springer.com/article/10.1007/s10825-024-02223-z","RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
引用次数: 0

摘要

本研究介绍了在LTspice环境中模拟电流体动力(EHD)喷墨印刷忆阻器的方法,LTspice是模拟电路仿真的常用工具。EHD 印刷技术是一种低成本制造技术,可用于制造纳米级高精度、高分辨率的柔性薄膜和忆阻器。忆阻器是人工智能硬件的尖端元件,可以通过各种方法制造,包括传统的半导体工艺和印刷电子技术。然而,基于印刷电子制造技术的忆阻器精确建模仍是一项挑战。本文介绍了一种专门用于(EHD)喷墨打印忆阻器的数学模型,采用经验数学确保与 LTspice 兼容。据作者所知,印刷电子设备的建模仍处于早期阶段,本文将首次讨论印刷忆阻器的数学和 Spice 建模。该模型与具有夹层结构(\(text {Ag/ZrO}_{2}/\text {Ag}/))的实际忆阻器进行了验证,显示出可接受的误差百分比。这需要修改现有的忆阻器模型,在其中加入一个反映 EHD 印刷过程特性的函数。该函数旨在捕捉印刷技术对宽度和长度等各种器件参数的影响,重点是在 LTspice 环境中对宽度进行精确建模。本文介绍了基于所提出的经验数学模型开发的 LTspice 模型。结果基于不同的尺寸:分别为 40 nm、120 nm 和 680 nm。
本文章由计算机程序翻译,如有差异,请以英文原文为准。

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Empirical mathematical model based on optimized parameter extraction from captured electrohydrodynamic inkjet memristor device with LTspice model

This research presents a simulating electrohydrodynamically (EHD) inkjet-printed memristors in LTspice environment, a popular tool for analog circuit simulation. EHD printing technique is used as one of low cost fabrication technique for fabricate flexible thin films and memristors with high precision and resolution in a scale of nanometers. Memristors are cutting-edge components for AI hardware, and they can be fabricated through various methods, including traditional semiconductor processes and printed electronics techniques. However, printed electronics fabrication based for memristor modeling accurately remains a challenge. This paper introduces a mathematical model specifically for (EHD) inkjet-printed memristors, employing empirical mathematics to ensure compatibility with LTspice. While the modeling of printed electronic devices still in the early stage—to the knowledge of the authors-this paper will discuss for the first time mathematical and Spice modeling for printed memristor. The model is validated against actual memristors with a sandwiched structure (\(\text {Ag/ZrO}_{2}/\text {Ag}\)), showing acceptable error percentage. It involves modifying an existing memristor model by incorporating a function that reflects the characteristics of the EHD printing process. This function is designed to capture the impact of the printing technique on various device parameters, such as width and length, with a focus on accurately modeling the width in the LTspice environment. This paper presents a developed LTspice model based on the proposed empirical mathematical model. The results are based on different sizes: 40 nm, 120 nm, 680 nm, respectively.

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来源期刊
Journal of Computational Electronics
Journal of Computational Electronics ENGINEERING, ELECTRICAL & ELECTRONIC-PHYSICS, APPLIED
CiteScore
4.50
自引率
4.80%
发文量
142
审稿时长
>12 weeks
期刊介绍: he Journal of Computational Electronics brings together research on all aspects of modeling and simulation of modern electronics. This includes optical, electronic, mechanical, and quantum mechanical aspects, as well as research on the underlying mathematical algorithms and computational details. The related areas of energy conversion/storage and of molecular and biological systems, in which the thrust is on the charge transport, electronic, mechanical, and optical properties, are also covered. In particular, we encourage manuscripts dealing with device simulation; with optical and optoelectronic systems and photonics; with energy storage (e.g. batteries, fuel cells) and harvesting (e.g. photovoltaic), with simulation of circuits, VLSI layout, logic and architecture (based on, for example, CMOS devices, quantum-cellular automata, QBITs, or single-electron transistors); with electromagnetic simulations (such as microwave electronics and components); or with molecular and biological systems. However, in all these cases, the submitted manuscripts should explicitly address the electronic properties of the relevant systems, materials, or devices and/or present novel contributions to the physical models, computational strategies, or numerical algorithms.
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