电子速度调制对氮化铝/氮化镓高频晶体管微波功率性能的影响

IF 3.5 2区 物理与天体物理 Q2 PHYSICS, APPLIED Applied Physics Letters Pub Date : 2024-11-13 DOI:10.1063/5.0222095
Mingyan Wang, Yuanjie Lv, Heng Zhou, Chao Liu, Peng Cui, Zhaojun Lin
{"title":"电子速度调制对氮化铝/氮化镓高频晶体管微波功率性能的影响","authors":"Mingyan Wang, Yuanjie Lv, Heng Zhou, Chao Liu, Peng Cui, Zhaojun Lin","doi":"10.1063/5.0222095","DOIUrl":null,"url":null,"abstract":"In this study, we demonstrate the effects of electron velocity modulation (Δve/ΔVgs) on the microwave power performance for AlGaN/GaN HFETs. In order to conduct the experiments, AlGaN/GaN HFETs with gate lengths ranging from 500 to 80 nm were fabricated. Electron transport was investigated by coupling a drift-diffusion solver with the Monte Carlo method. As gate lengths (Lg) varied from 500 to 200 nm, the increased polarization Coulomb field scattering led to an increase in Δve/ΔVgs and the stronger electric field (E) increased ve and enhanced the transconductance (gm), which in turn led to a greater power gain (Gp) in the HFETs. The higher power output (Pout) was also due to the increased ve that boosted the saturated output current (Ids,sat). The unique phenomenon that occurs from electron velocity modulation of AlGaN/GaN HFETs at electron densities (ns) < 3.42 × 1012cm−2 can be used as an effective mechanism to enhance the power gain of AlGaN/GaN HFETs.","PeriodicalId":8094,"journal":{"name":"Applied Physics Letters","volume":null,"pages":null},"PeriodicalIF":3.5000,"publicationDate":"2024-11-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Impact of electron velocity modulation on microwave power performance for AlGaN/GaN HFETs\",\"authors\":\"Mingyan Wang, Yuanjie Lv, Heng Zhou, Chao Liu, Peng Cui, Zhaojun Lin\",\"doi\":\"10.1063/5.0222095\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this study, we demonstrate the effects of electron velocity modulation (Δve/ΔVgs) on the microwave power performance for AlGaN/GaN HFETs. In order to conduct the experiments, AlGaN/GaN HFETs with gate lengths ranging from 500 to 80 nm were fabricated. Electron transport was investigated by coupling a drift-diffusion solver with the Monte Carlo method. As gate lengths (Lg) varied from 500 to 200 nm, the increased polarization Coulomb field scattering led to an increase in Δve/ΔVgs and the stronger electric field (E) increased ve and enhanced the transconductance (gm), which in turn led to a greater power gain (Gp) in the HFETs. The higher power output (Pout) was also due to the increased ve that boosted the saturated output current (Ids,sat). The unique phenomenon that occurs from electron velocity modulation of AlGaN/GaN HFETs at electron densities (ns) < 3.42 × 1012cm−2 can be used as an effective mechanism to enhance the power gain of AlGaN/GaN HFETs.\",\"PeriodicalId\":8094,\"journal\":{\"name\":\"Applied Physics Letters\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":3.5000,\"publicationDate\":\"2024-11-13\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Applied Physics Letters\",\"FirstCategoryId\":\"101\",\"ListUrlMain\":\"https://doi.org/10.1063/5.0222095\",\"RegionNum\":2,\"RegionCategory\":\"物理与天体物理\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q2\",\"JCRName\":\"PHYSICS, APPLIED\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Applied Physics Letters","FirstCategoryId":"101","ListUrlMain":"https://doi.org/10.1063/5.0222095","RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"PHYSICS, APPLIED","Score":null,"Total":0}
引用次数: 0

摘要

在本研究中,我们证明了电子速度调制(Δve/ΔVgs)对氮化镓/氮化镓高频晶体管微波功率性能的影响。为了进行实验,我们制作了栅极长度从 500 纳米到 80 纳米不等的 AlGaN/GaN HFET。通过将漂移扩散求解器与蒙特卡罗方法相结合,对电子传输进行了研究。随着栅极长度 (Lg) 从 500 nm 到 200 nm 的变化,极化库仑场散射的增加导致了 Δve/ΔVgs 的增加,而更强的电场 (E) 增加了 ve 并提高了跨导 (gm),这反过来又导致了 HFET 中更大的功率增益 (Gp)。更高的功率输出(Pout)也是由于ve 的增加提高了饱和输出电流(Ids,sat)。在电子密度 (ns) < 3.42 × 1012cm-2 时,AlGaN/GaN 高频晶体管的电子速度调制所产生的独特现象可以作为一种有效机制来提高 AlGaN/GaN 高频晶体管的功率增益。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
查看原文
分享 分享
微信好友 朋友圈 QQ好友 复制链接
本刊更多论文
Impact of electron velocity modulation on microwave power performance for AlGaN/GaN HFETs
In this study, we demonstrate the effects of electron velocity modulation (Δve/ΔVgs) on the microwave power performance for AlGaN/GaN HFETs. In order to conduct the experiments, AlGaN/GaN HFETs with gate lengths ranging from 500 to 80 nm were fabricated. Electron transport was investigated by coupling a drift-diffusion solver with the Monte Carlo method. As gate lengths (Lg) varied from 500 to 200 nm, the increased polarization Coulomb field scattering led to an increase in Δve/ΔVgs and the stronger electric field (E) increased ve and enhanced the transconductance (gm), which in turn led to a greater power gain (Gp) in the HFETs. The higher power output (Pout) was also due to the increased ve that boosted the saturated output current (Ids,sat). The unique phenomenon that occurs from electron velocity modulation of AlGaN/GaN HFETs at electron densities (ns) < 3.42 × 1012cm−2 can be used as an effective mechanism to enhance the power gain of AlGaN/GaN HFETs.
求助全文
通过发布文献求助,成功后即可免费获取论文全文。 去求助
来源期刊
Applied Physics Letters
Applied Physics Letters 物理-物理:应用
CiteScore
6.40
自引率
10.00%
发文量
1821
审稿时长
1.6 months
期刊介绍: Applied Physics Letters (APL) features concise, up-to-date reports on significant new findings in applied physics. Emphasizing rapid dissemination of key data and new physical insights, APL offers prompt publication of new experimental and theoretical papers reporting applications of physics phenomena to all branches of science, engineering, and modern technology. In addition to regular articles, the journal also publishes invited Fast Track, Perspectives, and in-depth Editorials which report on cutting-edge areas in applied physics. APL Perspectives are forward-looking invited letters which highlight recent developments or discoveries. Emphasis is placed on very recent developments, potentially disruptive technologies, open questions and possible solutions. They also include a mini-roadmap detailing where the community should direct efforts in order for the phenomena to be viable for application and the challenges associated with meeting that performance threshold. Perspectives are characterized by personal viewpoints and opinions of recognized experts in the field. Fast Track articles are invited original research articles that report results that are particularly novel and important or provide a significant advancement in an emerging field. Because of the urgency and scientific importance of the work, the peer review process is accelerated. If, during the review process, it becomes apparent that the paper does not meet the Fast Track criterion, it is returned to a normal track.
期刊最新文献
Piezoelectric phononic integrated circuits Nitrogen-polar GaN quantum dots with tunable emission in the ultraviolet-A, B, and C bands Inorganic thermoelectric semiconductors with room temperature plasticity Mn3Sn-based noncollinear antiferromagnetic tunnel junctions with bilayer boron nitride tunnel barriers Magnetic metamaterials by ion-implantation
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
0
微信
客服QQ
Book学术公众号 扫码关注我们
反馈
×
意见反馈
请填写您的意见或建议
请填写您的手机或邮箱
已复制链接
已复制链接
快去分享给好友吧!
我知道了
×
扫码分享
扫码分享
Book学术官方微信
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术
文献互助 智能选刊 最新文献 互助须知 联系我们:info@booksci.cn
Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。
Copyright © 2023 Book学术 All rights reserved.
ghs 京公网安备 11010802042870号 京ICP备2023020795号-1