用于无损分析的 CaMgGeO4:Cr4+,Er3+ 荧光中通过 Cr4+-Er3+ 能量转移实现的可调谐宽带近红外-II 发射

IF 8.3 2区 材料科学 Q1 MATERIALS SCIENCE, MULTIDISCIPLINARY ACS Applied Materials & Interfaces Pub Date : 2024-11-05 DOI:10.1021/acsami.4c1434910.1021/acsami.4c14349
Hanyu Hu, Zeyu Lyu*, Dashuai Sun, Shuai Wei, Jia Liu, Xin Wang, Luhui Zhou and Hongpeng You*, 
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引用次数: 0

摘要

尽管有关宽带近红外(NIR)发射荧光粉的报道很多,但它们的发射主要集中在 700-1000 nm(NIR-I)范围内。在此,我们成功合成了一种宽带近红外荧光粉 CaMgGeO4:Cr4+(CMG:Cr4+),其发射范围为 1000-1600 纳米(NIR-II)。在 CMG:Cr4+ 中引入 Er3+ 离子后,CaMgGeO4:Cr4+,Er3+(fwhm = 361 nm)的近红外发射范围更广,弥补了 1500-1600 nm 的发光范围。更重要的是,发现了从 Cr4+ 到 Er3+ 离子的能量转移。此外,通过将 CMG:Cr4+,Er3+ 荧光粉与 590 纳米芯片相结合,还制造出了近红外 pc-LED。光通过不同液体时的透射光谱的强度和轮廓变化揭示了其在有机化合物识别中的潜在应用。这项工作为开发近红外-II 荧光粉开辟了一个方向。
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Tunable Broadband NIR-II Emission via Cr4+-Er3+ Energy Transfer in CaMgGeO4:Cr4+,Er3+ Phosphors for Nondestructive Analysis

Although there have been numerous reports on broadband near-infrared (NIR) emitting phosphors, their emissions are mainly concentrated in the range of 700–1000 nm (NIR-I). Herein, we successfully synthesized a broadband near-infrared phosphor CaMgGeO4:Cr4+(CMG:Cr4+) with an emission in the range of 1000–1600 nm (NIR-II). The introduction of Er3+ ions into CMG:Cr4+ resulted in a wider near-infrared emission phosphor CaMgGeO4:Cr4+,Er3+ (fwhm = 361 nm), compensating for the luminescence of 1500–1600 nm. More importantly, an energy transfer from Cr4+ to Er3+ ions has been discovered. Furthermore, a NIR pc-LED was fabricated by combining the CMG:Cr4+,Er3+ phosphor with a 590 nm chip. The changes in intensity and profile of the transmission spectra of light passing through different liquids reveal its potential application in organic compound recognition. This work opens a direction for the development of NIR-II phosphors.

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来源期刊
ACS Applied Materials & Interfaces
ACS Applied Materials & Interfaces 工程技术-材料科学:综合
CiteScore
16.00
自引率
6.30%
发文量
4978
审稿时长
1.8 months
期刊介绍: ACS Applied Materials & Interfaces is a leading interdisciplinary journal that brings together chemists, engineers, physicists, and biologists to explore the development and utilization of newly-discovered materials and interfacial processes for specific applications. Our journal has experienced remarkable growth since its establishment in 2009, both in terms of the number of articles published and the impact of the research showcased. We are proud to foster a truly global community, with the majority of published articles originating from outside the United States, reflecting the rapid growth of applied research worldwide.
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