Characterization of low sodium type II silicon clathrate film spin dynamics

Type II Si clathrate is a Si-based, crystalline alternative to diamond silicon with interesting optoelectronic properties. Here, a pulsed electron paramagnetic resonance study of the spin dynamics of sodium-doped, type II NaxSi136 silicon clathrate films is reported. Focusing on the hyperfine lines of isolated Na atoms, the temperature dependence of the electron spin dynamics is examined from 6 to 25 K. The measurements exhibit multi-exponential decay, indicating multiple spin relaxation rates in the system. As expected, spin relaxation time (T1) increases rapidly with decreasing temperature, reaching ∼300 μs at 6.4 K. The phase memory (TM) shows less temperature dependence with a value of ∼3 μs at the same temperature. The temperature dependence of T1 exhibits Arrhenius behavior in the measurement range consistent with an Orbach pathway. There are strong similarities to the spin behavior of other defect donors in diamond silicon. The results provide insights into the potential of Si clathrates for spin-based applications.