{"title":"缺陷造就更好的半导体","authors":"Matthew Parker","doi":"10.1038/s41928-024-01299-6","DOIUrl":null,"url":null,"abstract":"<p>The researchers — who are based at the University of Illinois Urbana-Champaign — show that in certain compound semiconductors the defects self-organize into electrically neutral complexes. These push deep-level traps closer to the conduction band edge, where they act as donors. So rather than degrade performance, the CuIn<sub>5</sub>Se<sub>8</sub> field-effect transistors with introduced defects show better performance than their less defective parent material, CuInSe<sub>2</sub>.</p><p>The transistors show an average mobility of 58 cm<sup>2</sup> V<sup>–1</sup> s<sup>–1</sup>, on-state current density of 35 μA μm<sup>–1</sup> and subthreshold swing of 189 mV dec<sup>–1</sup>. They were used to make complementary logic circuits and ring oscillators (with solution-processed carbon nanotubes used to make the p-type transistors), and a driving circuit in a 508 pixels per inch micro-light-emitting diode.</p>","PeriodicalId":19064,"journal":{"name":"Nature Electronics","volume":null,"pages":null},"PeriodicalIF":33.7000,"publicationDate":"2024-11-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Defects make better semiconductors\",\"authors\":\"Matthew Parker\",\"doi\":\"10.1038/s41928-024-01299-6\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<p>The researchers — who are based at the University of Illinois Urbana-Champaign — show that in certain compound semiconductors the defects self-organize into electrically neutral complexes. These push deep-level traps closer to the conduction band edge, where they act as donors. So rather than degrade performance, the CuIn<sub>5</sub>Se<sub>8</sub> field-effect transistors with introduced defects show better performance than their less defective parent material, CuInSe<sub>2</sub>.</p><p>The transistors show an average mobility of 58 cm<sup>2</sup> V<sup>–1</sup> s<sup>–1</sup>, on-state current density of 35 μA μm<sup>–1</sup> and subthreshold swing of 189 mV dec<sup>–1</sup>. They were used to make complementary logic circuits and ring oscillators (with solution-processed carbon nanotubes used to make the p-type transistors), and a driving circuit in a 508 pixels per inch micro-light-emitting diode.</p>\",\"PeriodicalId\":19064,\"journal\":{\"name\":\"Nature Electronics\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":33.7000,\"publicationDate\":\"2024-11-14\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Nature Electronics\",\"FirstCategoryId\":\"5\",\"ListUrlMain\":\"https://doi.org/10.1038/s41928-024-01299-6\",\"RegionNum\":1,\"RegionCategory\":\"工程技术\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q1\",\"JCRName\":\"ENGINEERING, ELECTRICAL & ELECTRONIC\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Nature Electronics","FirstCategoryId":"5","ListUrlMain":"https://doi.org/10.1038/s41928-024-01299-6","RegionNum":1,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q1","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
The researchers — who are based at the University of Illinois Urbana-Champaign — show that in certain compound semiconductors the defects self-organize into electrically neutral complexes. These push deep-level traps closer to the conduction band edge, where they act as donors. So rather than degrade performance, the CuIn5Se8 field-effect transistors with introduced defects show better performance than their less defective parent material, CuInSe2.
The transistors show an average mobility of 58 cm2 V–1 s–1, on-state current density of 35 μA μm–1 and subthreshold swing of 189 mV dec–1. They were used to make complementary logic circuits and ring oscillators (with solution-processed carbon nanotubes used to make the p-type transistors), and a driving circuit in a 508 pixels per inch micro-light-emitting diode.
期刊介绍：
Nature Electronics is a comprehensive journal that publishes both fundamental and applied research in the field of electronics. It encompasses a wide range of topics, including the study of new phenomena and devices, the design and construction of electronic circuits, and the practical applications of electronics. In addition, the journal explores the commercial and industrial aspects of electronics research.
The primary focus of Nature Electronics is on the development of technology and its potential impact on society. The journal incorporates the contributions of scientists, engineers, and industry professionals, offering a platform for their research findings. Moreover, Nature Electronics provides insightful commentary, thorough reviews, and analysis of the key issues that shape the field, as well as the technologies that are reshaping society.
Like all journals within the prestigious Nature brand, Nature Electronics upholds the highest standards of quality. It maintains a dedicated team of professional editors and follows a fair and rigorous peer-review process. The journal also ensures impeccable copy-editing and production, enabling swift publication. Additionally, Nature Electronics prides itself on its editorial independence, ensuring unbiased and impartial reporting.
In summary, Nature Electronics is a leading journal that publishes cutting-edge research in electronics. With its multidisciplinary approach and commitment to excellence, the journal serves as a valuable resource for scientists, engineers, and industry professionals seeking to stay at the forefront of advancements in the field.
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