{"title":"从大黄中绿色合成碳点结构并制造肖特基二极管。","authors":"Muhammed Taha Durmus, Ebru Bozkurt","doi":"10.3762/bjnano.15.110","DOIUrl":null,"url":null,"abstract":"<p><p>In this study, we aimed to synthesize new carbon dot structures (CDs) in a single step by using the plant <i>Rheum Ribes</i> for the first time and to contribute to the studies in the field of diode fabrication by using the new CDs. The CDs were obtained by hydrothermal synthesis, which is commonly used in the literature. TEM and zeta potential measurements were used to determine morphology and sizes of the CDs, and XRD, XPS, and FTIR and micro-Raman spectroscopy were used for structural characterization. Optical characterization of the CDs was done by absorption and steady-state fluorescence measurements. In the second part of the study, CDs were dripped onto silicon substrates, and a CDs thin film was formed by evaporation. A diode structure was obtained by evaporating gold with the shadow mask technique on the CDs film, and the current-voltage characteristics of this diode were examined. The synthesized CDs are spherical with an average size of 5.5 nm, have a negative surface charge and contain 73.3 atom % C, 24.0 atom % O, and 2.7 atom % N. The CDs exhibit fluorescence at approximately 394 nm. The layer thickness and bandgap energy of the prepared CDs film were calculated as 566 nm and 5.25 eV, respectively. The ideality factor and the measured barrier height (Φ<sub>b</sub>) of the CDs-based Schottky diode were calculated as 9.1 and 0.364 eV, respectively. The CDs were used as semiconductor material in a Schottky diode, and the diode exhibited rectification behavior. The results obtained from this study showed that CDs can be applied in the field of electronics, apart from sensor studies, which are common application areas.</p>","PeriodicalId":8802,"journal":{"name":"Beilstein Journal of Nanotechnology","volume":"15 ","pages":"1369-1375"},"PeriodicalIF":2.6000,"publicationDate":"2024-11-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://www.ncbi.nlm.nih.gov/pmc/articles/PMC11552443/pdf/","citationCount":"0","resultStr":"{\"title\":\"Green synthesis of carbon dot structures from <i>Rheum Ribes</i> and Schottky diode fabrication.\",\"authors\":\"Muhammed Taha Durmus, Ebru Bozkurt\",\"doi\":\"10.3762/bjnano.15.110\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<p><p>In this study, we aimed to synthesize new carbon dot structures (CDs) in a single step by using the plant <i>Rheum Ribes</i> for the first time and to contribute to the studies in the field of diode fabrication by using the new CDs. 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The ideality factor and the measured barrier height (Φ<sub>b</sub>) of the CDs-based Schottky diode were calculated as 9.1 and 0.364 eV, respectively. The CDs were used as semiconductor material in a Schottky diode, and the diode exhibited rectification behavior. 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引用次数: 0
摘要
在这项研究中,我们旨在首次利用大黄这种植物一步合成新的碳点结构(CD),并利用新的 CD 为二极管制造领域的研究做出贡献。这种 CD 是通过文献中常用的水热合成法获得的。TEM 和 zeta 电位测量用于确定 CD 的形态和尺寸,XRD、XPS、傅立叶变换红外光谱和微拉曼光谱用于结构表征。通过吸收和稳态荧光测量对光盘进行了光学表征。研究的第二部分是将 CD 滴在硅基底上,通过蒸发形成 CD 薄膜。利用阴影掩膜技术在 CD 薄膜上蒸发金,得到了一个二极管结构,并研究了该二极管的电流-电压特性。合成的光盘呈球形,平均尺寸为 5.5 纳米,表面带负电荷,含有 73.3 原子%的 C、24.0 原子%的 O 和 2.7 原子%的 N。经计算,制备的 CD 薄膜的层厚度和带隙能分别为 566 纳米和 5.25 eV。计算得出基于 CD 的肖特基二极管的理想因子和测量势垒高度 (Φb)分别为 9.1 和 0.364 eV。在肖特基二极管中使用 CD 作为半导体材料,二极管表现出整流行为。这项研究的结果表明,除了传感器研究等常见应用领域外,CD 还可应用于电子学领域。
Green synthesis of carbon dot structures from Rheum Ribes and Schottky diode fabrication.
In this study, we aimed to synthesize new carbon dot structures (CDs) in a single step by using the plant Rheum Ribes for the first time and to contribute to the studies in the field of diode fabrication by using the new CDs. The CDs were obtained by hydrothermal synthesis, which is commonly used in the literature. TEM and zeta potential measurements were used to determine morphology and sizes of the CDs, and XRD, XPS, and FTIR and micro-Raman spectroscopy were used for structural characterization. Optical characterization of the CDs was done by absorption and steady-state fluorescence measurements. In the second part of the study, CDs were dripped onto silicon substrates, and a CDs thin film was formed by evaporation. A diode structure was obtained by evaporating gold with the shadow mask technique on the CDs film, and the current-voltage characteristics of this diode were examined. The synthesized CDs are spherical with an average size of 5.5 nm, have a negative surface charge and contain 73.3 atom % C, 24.0 atom % O, and 2.7 atom % N. The CDs exhibit fluorescence at approximately 394 nm. The layer thickness and bandgap energy of the prepared CDs film were calculated as 566 nm and 5.25 eV, respectively. The ideality factor and the measured barrier height (Φb) of the CDs-based Schottky diode were calculated as 9.1 and 0.364 eV, respectively. The CDs were used as semiconductor material in a Schottky diode, and the diode exhibited rectification behavior. The results obtained from this study showed that CDs can be applied in the field of electronics, apart from sensor studies, which are common application areas.
期刊介绍:
The Beilstein Journal of Nanotechnology is an international, peer-reviewed, Open Access journal. It provides a unique platform for rapid publication without any charges (free for author and reader) – Platinum Open Access. The content is freely accessible 365 days a year to any user worldwide. Articles are available online immediately upon publication and are publicly archived in all major repositories. In addition, it provides a platform for publishing thematic issues (theme-based collections of articles) on topical issues in nanoscience and nanotechnology.
The journal is published and completely funded by the Beilstein-Institut, a non-profit foundation located in Frankfurt am Main, Germany. The editor-in-chief is Professor Thomas Schimmel – Karlsruhe Institute of Technology. He is supported by more than 20 associate editors who are responsible for a particular subject area within the scope of the journal.