碳和硫 K 边烷基化苯并噻吩薄膜的 NEXAFS 光谱。

IF 3.1 2区 化学 Q3 CHEMISTRY, PHYSICAL Journal of Chemical Physics Pub Date : 2024-11-14 DOI:10.1063/5.0231117
Paul Alexander Chantler, Lars Thomsen, Subhayan Roychoudhury, Chris J Glover, Valerie Mitchell, Sarah K M McGregor, Shih-Chun Lo, Ebinazar B Namdas, David Prendergast, Christopher R McNeill
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引用次数: 0

摘要

烷基化苯并噻吩是一类重要的有机半导体,在溶液处理有机场效应晶体管中表现出高性能。在这项工作中,我们研究了 2,7-二癸基[1]苯并噻吩并[3,2-b][1]苯并噻吩(C10-BTBT)在碳和硫 K 边的近边 X 射线吸收精细结构(NEXAFS)光谱。对薄膜进行了角度分辨实验,以描述与分子取向相关的二色性。此外,还使用基于密度泛函理论的多体 X 射线吸收光谱 (MBXAS) 方法进行了第一原理计算,以便将观察到的峰值及其二向性与特定反键分子轨道的跃迁联系起来。有趣的是,在碳和硫的 K 边缘,主要的最低能量峰的二向性是相反的。碳 K 边缘的低能峰属于碳 1s → π* 过渡,其过渡偶极矩 (TDM) 垂直于平面 BTBT 内核,而硫 K 边缘的主要低能峰属于硫 1s → σ* 过渡,其过渡偶极矩 (TDM) 沿着 BTBT 内核的长轴方向。MBAXS 模拟发现,由于σ* 轨道在硫原子上的强定位,硫 K 边缘最低能量的 π* 和 σ* 变换的能量发生了重新排序,从而理解了硫和碳 K 边缘的这些差异。这项研究强调了有机半导体在碳和硫 K 边的 NEXAFS 光谱差异,并为研究有机半导体薄膜的分子取向提供了有关峰值分配和 X 射线二色性的新见解。
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NEXAFS spectroscopy of alkylated benzothienobenzothiophene thin films at the carbon and sulfur K-edges.

Alkylated benzothienobenzothiophenes are an important class of organic semiconductors that exhibit high performance in solution-processed organic field-effect transistors. In this work, we study the near-edge x-ray absorption fine-structure (NEXAFS) spectra of 2,7-didecyl[1]benzothieno[3,2-b][1]benzothiophene (C10-BTBT) at both the carbon and sulfur K-edges. Angle-resolved experiments of thin films are performed to characterize the dichroism associated with molecular orientation. First-principles calculations using the density functional theory-based many-body x-ray absorption spectroscopy (MBXAS) method are also performed to correlate the peaks observed and their dichroism with transitions to specific antibonding molecular orbitals. Interestingly, the dichroism of the dominant, lowest energy peak is opposite at the carbon and sulfur K-edges. While the low-energy peak at the carbon K-edge is assigned to carbon 1s → π* transitions with transition dipole moment (TDM) perpendicular to the planar BTBT core, the dominant low energy peak at the sulfur K-edge is assigned to sulfur 1s → σ* transitions with TDM oriented along the long axis of the BTBT core. These differences at the sulfur and carbon K-edges are understood through the MBAXS simulations that find a reordering of the energy of the lowest energy π* and σ* transitions at the sulfur K-edge due to the strong localization of the σ* orbital over the sulfur atom. This work highlights differences in the NEXAFS spectra of organic semiconductors at carbon and sulfur K-edges and provides new insights into peak assignment and x-ray dichroism relevant for studying the molecular orientation of organic semiconductor films.

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来源期刊
Journal of Chemical Physics
Journal of Chemical Physics 物理-物理:原子、分子和化学物理
CiteScore
7.40
自引率
15.90%
发文量
1615
审稿时长
2 months
期刊介绍: The Journal of Chemical Physics publishes quantitative and rigorous science of long-lasting value in methods and applications of chemical physics. The Journal also publishes brief Communications of significant new findings, Perspectives on the latest advances in the field, and Special Topic issues. The Journal focuses on innovative research in experimental and theoretical areas of chemical physics, including spectroscopy, dynamics, kinetics, statistical mechanics, and quantum mechanics. In addition, topical areas such as polymers, soft matter, materials, surfaces/interfaces, and systems of biological relevance are of increasing importance. Topical coverage includes: Theoretical Methods and Algorithms Advanced Experimental Techniques Atoms, Molecules, and Clusters Liquids, Glasses, and Crystals Surfaces, Interfaces, and Materials Polymers and Soft Matter Biological Molecules and Networks.
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