{"title":"用于发光二极管的透明导电 Cd1-xSnxO 薄膜的铁磁和光致发光特性","authors":"Jaswanth Arcot, Kaleemulla Shaik","doi":"10.1007/s00339-024-08065-7","DOIUrl":null,"url":null,"abstract":"<div><p>Tin doped cadmium oxide (Cd<sub>1-x</sub>Sn<sub>x</sub>O) thin films at different tin (Sn) concentrations (x = 0, 0.03, 0.05, 0.07) were prepared using electron beam evaporation technique and subjected to various characterisations. From XRD, prepared thin films shows polycrystalline nature with cubic structure. FE-SEM nano-graphs confirmed the elongated oval shape morphology with 1:3 aspect ratios. FT-IR analysis revealed the presence of functional groups and chemical interactions. Raman spectrum was recorded in the range of 200 cm<sup>−1</sup> to 1000 cm<sup>−1</sup>. Using Tauc’s relation optical bandgap is calculated and it is found to be increased 2.00 eV – 2.40 eV. Photoluminescence spectra were recorded Cd<sub>1-x</sub>Sn<sub>x</sub>O thin films and emission peaks were found in visible region. CIE diagrams confirm the thin films in blue- green portion. Using a source meter, the electrical properties were examined and it was observed that the electrical resistivity decreased. Magnetic properties reveals that the Sn-doped CdO thin films exhibit ferromagnetic nature.</p></div>","PeriodicalId":473,"journal":{"name":"Applied Physics A","volume":"130 12","pages":""},"PeriodicalIF":2.5000,"publicationDate":"2024-11-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Ferromagnetic and photoluminescence properties of transparent conductive Cd1-xSnxO thin films for light emitting diode applications\",\"authors\":\"Jaswanth Arcot, Kaleemulla Shaik\",\"doi\":\"10.1007/s00339-024-08065-7\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<div><p>Tin doped cadmium oxide (Cd<sub>1-x</sub>Sn<sub>x</sub>O) thin films at different tin (Sn) concentrations (x = 0, 0.03, 0.05, 0.07) were prepared using electron beam evaporation technique and subjected to various characterisations. From XRD, prepared thin films shows polycrystalline nature with cubic structure. FE-SEM nano-graphs confirmed the elongated oval shape morphology with 1:3 aspect ratios. FT-IR analysis revealed the presence of functional groups and chemical interactions. Raman spectrum was recorded in the range of 200 cm<sup>−1</sup> to 1000 cm<sup>−1</sup>. Using Tauc’s relation optical bandgap is calculated and it is found to be increased 2.00 eV – 2.40 eV. Photoluminescence spectra were recorded Cd<sub>1-x</sub>Sn<sub>x</sub>O thin films and emission peaks were found in visible region. CIE diagrams confirm the thin films in blue- green portion. Using a source meter, the electrical properties were examined and it was observed that the electrical resistivity decreased. Magnetic properties reveals that the Sn-doped CdO thin films exhibit ferromagnetic nature.</p></div>\",\"PeriodicalId\":473,\"journal\":{\"name\":\"Applied Physics A\",\"volume\":\"130 12\",\"pages\":\"\"},\"PeriodicalIF\":2.5000,\"publicationDate\":\"2024-11-15\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Applied Physics A\",\"FirstCategoryId\":\"4\",\"ListUrlMain\":\"https://link.springer.com/article/10.1007/s00339-024-08065-7\",\"RegionNum\":4,\"RegionCategory\":\"材料科学\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q3\",\"JCRName\":\"MATERIALS SCIENCE, MULTIDISCIPLINARY\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Applied Physics A","FirstCategoryId":"4","ListUrlMain":"https://link.springer.com/article/10.1007/s00339-024-08065-7","RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"MATERIALS SCIENCE, MULTIDISCIPLINARY","Score":null,"Total":0}
Ferromagnetic and photoluminescence properties of transparent conductive Cd1-xSnxO thin films for light emitting diode applications
Tin doped cadmium oxide (Cd1-xSnxO) thin films at different tin (Sn) concentrations (x = 0, 0.03, 0.05, 0.07) were prepared using electron beam evaporation technique and subjected to various characterisations. From XRD, prepared thin films shows polycrystalline nature with cubic structure. FE-SEM nano-graphs confirmed the elongated oval shape morphology with 1:3 aspect ratios. FT-IR analysis revealed the presence of functional groups and chemical interactions. Raman spectrum was recorded in the range of 200 cm−1 to 1000 cm−1. Using Tauc’s relation optical bandgap is calculated and it is found to be increased 2.00 eV – 2.40 eV. Photoluminescence spectra were recorded Cd1-xSnxO thin films and emission peaks were found in visible region. CIE diagrams confirm the thin films in blue- green portion. Using a source meter, the electrical properties were examined and it was observed that the electrical resistivity decreased. Magnetic properties reveals that the Sn-doped CdO thin films exhibit ferromagnetic nature.
期刊介绍：
Applied Physics A publishes experimental and theoretical investigations in applied physics as regular articles, rapid communications, and invited papers. The distinguished 30-member Board of Editors reflects the interdisciplinary approach of the journal and ensures the highest quality of peer review.
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