{"title":"合成 PMMA/PEG/SiO2/SiC 多功能纳米结构并探索用于柔性纳米介电应用的微观结构和介电特性","authors":"Zina Sattar, Ahmed Hashim","doi":"10.1007/s12633-024-03138-x","DOIUrl":null,"url":null,"abstract":"<div><p>This study intends to improve the dielectric properties of PMMA/PEG/SiO<sub>2</sub>/SiC nanostructures for use in flexible pressure sensors and electrical nanodevices. PMMA/PEG films and PMMA/PEG films doped with SiO<sub>2</sub> and SiC NPs were created using a casting technique. The structural properties of PMMA/PEG/SiO<sub>2</sub>/SiC nanostructures were examined using FTIR and an optical microscope. The dielectric properties were assessed using an LCR meter across a frequency range from 100 Hz to 5 MHz. The analysis of the structural features of PMMA/PEG/SiO<sub>2</sub>/SiC nanostructures showed a significant presence of SiO<sub>2</sub> and SiC nanoparticles in the PMMA/PEG material and strong integration between SiO<sub>2</sub> and SiC nanoparticles and the PMMA/PEG matrix. The dielectric properties showed an increase in the dielectric parameters of PMMA/PEG as the concentration of SiO<sub>2</sub>-SiC NPs increased. The dielectric constant and AC electrical conductivity of PMMA/PEG rose by approximately 39% and 49%, respectively, with low dielectric loss values ranging from 0.14 to 0.275 at 100 Hz. These findings suggest that PMMA/PEG/SiO<sub>2</sub>/SiC nanostructures may be suitable for a variety of nanoelectronics applications. The dielectric properties of PMMA/PEG/SiO<sub>2</sub>/SiC nanostructures changed as the frequency increased. The structure and dielectric properties of the PMMA/PEG/SiO<sub>2</sub>/SiC nanostructures suggest they can be used in a variety of flexible nanoelectronics applications due to their low-cost, high-energy storage capability, and minimal energy loss. An investigation was conducted on the pressure sensor application of PMMA/PEG/SiO<sub>2</sub>/SiC nanostructures. The results indicated that the PMMA/PEG/SiO<sub>2</sub>/SiC nanostructures exhibit high sensitivity to pressure, exceptional flexibility, and strong environmental resilience in comparison to other sensors.</p></div>","PeriodicalId":776,"journal":{"name":"Silicon","volume":"16 17","pages":"6181 - 6192"},"PeriodicalIF":2.8000,"publicationDate":"2024-09-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Synthesis of PMMA/PEG/SiO2/SiC Multifunctional Nanostructures and Exploring the Microstructure and Dielectric Features for Flexible Nanodielectric Applications\",\"authors\":\"Zina Sattar, Ahmed Hashim\",\"doi\":\"10.1007/s12633-024-03138-x\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<div><p>This study intends to improve the dielectric properties of PMMA/PEG/SiO<sub>2</sub>/SiC nanostructures for use in flexible pressure sensors and electrical nanodevices. PMMA/PEG films and PMMA/PEG films doped with SiO<sub>2</sub> and SiC NPs were created using a casting technique. The structural properties of PMMA/PEG/SiO<sub>2</sub>/SiC nanostructures were examined using FTIR and an optical microscope. The dielectric properties were assessed using an LCR meter across a frequency range from 100 Hz to 5 MHz. The analysis of the structural features of PMMA/PEG/SiO<sub>2</sub>/SiC nanostructures showed a significant presence of SiO<sub>2</sub> and SiC nanoparticles in the PMMA/PEG material and strong integration between SiO<sub>2</sub> and SiC nanoparticles and the PMMA/PEG matrix. The dielectric properties showed an increase in the dielectric parameters of PMMA/PEG as the concentration of SiO<sub>2</sub>-SiC NPs increased. The dielectric constant and AC electrical conductivity of PMMA/PEG rose by approximately 39% and 49%, respectively, with low dielectric loss values ranging from 0.14 to 0.275 at 100 Hz. These findings suggest that PMMA/PEG/SiO<sub>2</sub>/SiC nanostructures may be suitable for a variety of nanoelectronics applications. The dielectric properties of PMMA/PEG/SiO<sub>2</sub>/SiC nanostructures changed as the frequency increased. The structure and dielectric properties of the PMMA/PEG/SiO<sub>2</sub>/SiC nanostructures suggest they can be used in a variety of flexible nanoelectronics applications due to their low-cost, high-energy storage capability, and minimal energy loss. An investigation was conducted on the pressure sensor application of PMMA/PEG/SiO<sub>2</sub>/SiC nanostructures. The results indicated that the PMMA/PEG/SiO<sub>2</sub>/SiC nanostructures exhibit high sensitivity to pressure, exceptional flexibility, and strong environmental resilience in comparison to other sensors.</p></div>\",\"PeriodicalId\":776,\"journal\":{\"name\":\"Silicon\",\"volume\":\"16 17\",\"pages\":\"6181 - 6192\"},\"PeriodicalIF\":2.8000,\"publicationDate\":\"2024-09-21\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Silicon\",\"FirstCategoryId\":\"88\",\"ListUrlMain\":\"https://link.springer.com/article/10.1007/s12633-024-03138-x\",\"RegionNum\":3,\"RegionCategory\":\"材料科学\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q3\",\"JCRName\":\"CHEMISTRY, PHYSICAL\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Silicon","FirstCategoryId":"88","ListUrlMain":"https://link.springer.com/article/10.1007/s12633-024-03138-x","RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"CHEMISTRY, PHYSICAL","Score":null,"Total":0}
Synthesis of PMMA/PEG/SiO2/SiC Multifunctional Nanostructures and Exploring the Microstructure and Dielectric Features for Flexible Nanodielectric Applications
This study intends to improve the dielectric properties of PMMA/PEG/SiO2/SiC nanostructures for use in flexible pressure sensors and electrical nanodevices. PMMA/PEG films and PMMA/PEG films doped with SiO2 and SiC NPs were created using a casting technique. The structural properties of PMMA/PEG/SiO2/SiC nanostructures were examined using FTIR and an optical microscope. The dielectric properties were assessed using an LCR meter across a frequency range from 100 Hz to 5 MHz. The analysis of the structural features of PMMA/PEG/SiO2/SiC nanostructures showed a significant presence of SiO2 and SiC nanoparticles in the PMMA/PEG material and strong integration between SiO2 and SiC nanoparticles and the PMMA/PEG matrix. The dielectric properties showed an increase in the dielectric parameters of PMMA/PEG as the concentration of SiO2-SiC NPs increased. The dielectric constant and AC electrical conductivity of PMMA/PEG rose by approximately 39% and 49%, respectively, with low dielectric loss values ranging from 0.14 to 0.275 at 100 Hz. These findings suggest that PMMA/PEG/SiO2/SiC nanostructures may be suitable for a variety of nanoelectronics applications. The dielectric properties of PMMA/PEG/SiO2/SiC nanostructures changed as the frequency increased. The structure and dielectric properties of the PMMA/PEG/SiO2/SiC nanostructures suggest they can be used in a variety of flexible nanoelectronics applications due to their low-cost, high-energy storage capability, and minimal energy loss. An investigation was conducted on the pressure sensor application of PMMA/PEG/SiO2/SiC nanostructures. The results indicated that the PMMA/PEG/SiO2/SiC nanostructures exhibit high sensitivity to pressure, exceptional flexibility, and strong environmental resilience in comparison to other sensors.
期刊介绍：
The journal Silicon is intended to serve all those involved in studying the role of silicon as an enabling element in materials science. There are no restrictions on disciplinary boundaries provided the focus is on silicon-based materials or adds significantly to the understanding of such materials. Accordingly, such contributions are welcome in the areas of inorganic and organic chemistry, physics, biology, engineering, nanoscience, environmental science, electronics and optoelectronics, and modeling and theory. Relevant silicon-based materials include, but are not limited to, semiconductors, polymers, composites, ceramics, glasses, coatings, resins, composites, small molecules, and thin films.
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