Md Mehedi Hasan Tanim, Shubham Mondal, Yuanpeng Wu, Ding Wang, Garrett Baucom, Eitan Hershkovitz, Yifan Shen, Honggyu Kim, Theodore B. Norris, Zetian Mi
{"title":"在紫外线 A、B 和 C 波段具有可调发射的氮极 GaN 量子点","authors":"Md Mehedi Hasan Tanim, Shubham Mondal, Yuanpeng Wu, Ding Wang, Garrett Baucom, Eitan Hershkovitz, Yifan Shen, Honggyu Kim, Theodore B. Norris, Zetian Mi","doi":"10.1063/5.0223764","DOIUrl":null,"url":null,"abstract":"In this study, we report on the molecular beam epitaxy and characterization of nitrogen-polar (N-polar) GaN quantum dots (QDs) grown on SiC substrates. By varying the growth conditions, the emission wavelengths of GaN QDs can be controllably tuned across a large part of the ultraviolet-A, B, and C bands. For N-polar QDs emitting at 243 nm, we measured an internal quantum efficiency (IQE) of 86.4% at room temperature, with predominantly transverse-electric (TE) polarized emission. Such N-polar GaN QDs offer a promising path for achieving high-efficiency mid- and deep-ultraviolet optoelectronics, including light-emitting diodes and lasers.","PeriodicalId":8094,"journal":{"name":"Applied Physics Letters","volume":null,"pages":null},"PeriodicalIF":3.5000,"publicationDate":"2024-11-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Nitrogen-polar GaN quantum dots with tunable emission in the ultraviolet-A, B, and C bands\",\"authors\":\"Md Mehedi Hasan Tanim, Shubham Mondal, Yuanpeng Wu, Ding Wang, Garrett Baucom, Eitan Hershkovitz, Yifan Shen, Honggyu Kim, Theodore B. Norris, Zetian Mi\",\"doi\":\"10.1063/5.0223764\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this study, we report on the molecular beam epitaxy and characterization of nitrogen-polar (N-polar) GaN quantum dots (QDs) grown on SiC substrates. By varying the growth conditions, the emission wavelengths of GaN QDs can be controllably tuned across a large part of the ultraviolet-A, B, and C bands. For N-polar QDs emitting at 243 nm, we measured an internal quantum efficiency (IQE) of 86.4% at room temperature, with predominantly transverse-electric (TE) polarized emission. Such N-polar GaN QDs offer a promising path for achieving high-efficiency mid- and deep-ultraviolet optoelectronics, including light-emitting diodes and lasers.\",\"PeriodicalId\":8094,\"journal\":{\"name\":\"Applied Physics Letters\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":3.5000,\"publicationDate\":\"2024-11-15\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Applied Physics Letters\",\"FirstCategoryId\":\"101\",\"ListUrlMain\":\"https://doi.org/10.1063/5.0223764\",\"RegionNum\":2,\"RegionCategory\":\"物理与天体物理\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q2\",\"JCRName\":\"PHYSICS, APPLIED\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Applied Physics Letters","FirstCategoryId":"101","ListUrlMain":"https://doi.org/10.1063/5.0223764","RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"PHYSICS, APPLIED","Score":null,"Total":0}
引用次数: 0
摘要
在这项研究中,我们报告了在碳化硅衬底上生长的氮极性(N-polar)氮化镓量子点(QDs)的分子束外延和表征。通过改变生长条件,氮化镓量子点的发射波长可以在紫外-A、B 和 C 波段的大部分范围内进行可控调节。对于在 243 纳米波长处发射的 N 极 QDs,我们在室温下测得的内部量子效率(IQE)为 86.4%,主要是横电(TE)极化发射。这种 N 极 GaN QD 为实现高效中紫外和深紫外光电子器件(包括发光二极管和激光器)提供了一条前景广阔的途径。
Nitrogen-polar GaN quantum dots with tunable emission in the ultraviolet-A, B, and C bands
In this study, we report on the molecular beam epitaxy and characterization of nitrogen-polar (N-polar) GaN quantum dots (QDs) grown on SiC substrates. By varying the growth conditions, the emission wavelengths of GaN QDs can be controllably tuned across a large part of the ultraviolet-A, B, and C bands. For N-polar QDs emitting at 243 nm, we measured an internal quantum efficiency (IQE) of 86.4% at room temperature, with predominantly transverse-electric (TE) polarized emission. Such N-polar GaN QDs offer a promising path for achieving high-efficiency mid- and deep-ultraviolet optoelectronics, including light-emitting diodes and lasers.
期刊介绍:
Applied Physics Letters (APL) features concise, up-to-date reports on significant new findings in applied physics. Emphasizing rapid dissemination of key data and new physical insights, APL offers prompt publication of new experimental and theoretical papers reporting applications of physics phenomena to all branches of science, engineering, and modern technology.
In addition to regular articles, the journal also publishes invited Fast Track, Perspectives, and in-depth Editorials which report on cutting-edge areas in applied physics.
APL Perspectives are forward-looking invited letters which highlight recent developments or discoveries. Emphasis is placed on very recent developments, potentially disruptive technologies, open questions and possible solutions. They also include a mini-roadmap detailing where the community should direct efforts in order for the phenomena to be viable for application and the challenges associated with meeting that performance threshold. Perspectives are characterized by personal viewpoints and opinions of recognized experts in the field.
Fast Track articles are invited original research articles that report results that are particularly novel and important or provide a significant advancement in an emerging field. Because of the urgency and scientific importance of the work, the peer review process is accelerated. If, during the review process, it becomes apparent that the paper does not meet the Fast Track criterion, it is returned to a normal track.