利用反常 X 射线散射分析 Ca9RE(PO4)7 荧光粉中 Eu 和 Er 的分布

IF 1.7 4区 材料科学 Q3 CRYSTALLOGRAPHY Journal of Crystal Growth Pub Date : 2024-10-21 DOI:10.1016/j.jcrysgro.2024.127955
K. Hiraoka , R. Yamane , M. Tokuda , K. Sugiyama
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引用次数: 0

摘要

利用单晶 X 射线衍射分析了 Ca9Eu(PO4)7 和 Ca9Er(PO4)7 磷光体的结构。大多数 Eu 离子位于中等大小的 M1 和 M2 位点,少量占据 M5 位点。相反,较小的 Er 离子则偏爱最小的 M5 位点。这项研究还展示了在 Er LIII 和 Er LIII 边缘使用反常 X 射线散射测量的方法。在 Ca9Eu(PO4)7 和 Ca9Er(PO4)7 的散射因子中观察到的能量依赖性证实了 Eu 和 Er 的优先分布。由于这种反常 X 射线散射方法利用了每种元素独特的反常色散项,因此建议将这种先进的技术与同步辐射源相结合,使其成为区分固态荧光粉中近邻稀土元素的有力方法。
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Distribution of Eu and Er in Ca9RE(PO4)7 phosphors analyzed by anomalous X-ray scattering
The structures of Ca9Eu(PO4)7 and Ca9Er(PO4)7 phosphors were analyzed using single-crystal X-ray diffraction. Most Eu ions reside at the medium-sized M1 and M2 sites, with a small amount occupying the M5 site. In contrast, the smaller Er ions favor the smallest M5 site. This study also demonstrates the use of anomalous X-ray scattering measurements at the Er LIII and Er LIII-edges. The energy dependencies observed in the scattering factors for Ca9Eu(PO4)7 and Ca9Er(PO4)7 confirmed the preferred distribution of Eu and Er. Because this anomalous X-ray scattering method leverages the unique anomalous dispersion terms of each element, this advanced technique, coupled with a synchrotron radiation source, is suggested to be a powerful method for distinguishing near-neighbor rare-earth elements in solid-state phosphors.
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来源期刊
Journal of Crystal Growth
Journal of Crystal Growth 化学-晶体学
CiteScore
3.60
自引率
11.10%
发文量
373
审稿时长
65 days
期刊介绍: The journal offers a common reference and publication source for workers engaged in research on the experimental and theoretical aspects of crystal growth and its applications, e.g. in devices. Experimental and theoretical contributions are published in the following fields: theory of nucleation and growth, molecular kinetics and transport phenomena, crystallization in viscous media such as polymers and glasses; crystal growth of metals, minerals, semiconductors, superconductors, magnetics, inorganic, organic and biological substances in bulk or as thin films; molecular beam epitaxy, chemical vapor deposition, growth of III-V and II-VI and other semiconductors; characterization of single crystals by physical and chemical methods; apparatus, instrumentation and techniques for crystal growth, and purification methods; multilayer heterostructures and their characterisation with an emphasis on crystal growth and epitaxial aspects of electronic materials. A special feature of the journal is the periodic inclusion of proceedings of symposia and conferences on relevant aspects of crystal growth.
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