Hisashi Yamada , Tokio Takahashi , Takahiro Gotow , Naoto Kumagai , Tetsuji Shimizu , Toshihide Ide , Tatsuro Maeda
{"title":"InN/Al2O3 (0001) 的无氨准大气 MOCVD","authors":"Hisashi Yamada , Tokio Takahashi , Takahiro Gotow , Naoto Kumagai , Tetsuji Shimizu , Toshihide Ide , Tatsuro Maeda","doi":"10.1016/j.jcrysgro.2024.127980","DOIUrl":null,"url":null,"abstract":"<div><div>We demonstrate ammonia-free quasi-atmospheric metal–organic chemical vapor deposition (AFQA-MOCVD) of InN grown on <em>c</em>-plane sapphire (Al<sub>2</sub>O<sub>3</sub>) substrate using high-density nitrogen (N<sub>2</sub>) microstrip-line microwave plasma. Dependence of growth temperature (T<sub>g</sub>) and N<sub>2</sub> plasma power on structural properties were examined. Increasing T<sub>g</sub> and N<sub>2</sub> plasma power markedly improved surface morphology of InN. An atomically smooth surface with layer-by-layer growth mode was realized at T<sub>g</sub> of 750 °C under N<sub>2</sub> plasma power of 80 W. Fully strain-relaxed InN was grown on in-plane crystal rotation by 30° with respect to the Al<sub>2</sub>O<sub>3</sub> (0001). N-polar InN on Al<sub>2</sub>O<sub>3</sub> (0001) was revealed by scanning transmission electron microscopy. AFQA-MOCVD enables to expand growth windows by increasing T<sub>g</sub> and V/III ratio compared to the standard MOCVD using NH<sub>3</sub>.</div></div>","PeriodicalId":353,"journal":{"name":"Journal of Crystal Growth","volume":"650 ","pages":"Article 127980"},"PeriodicalIF":1.7000,"publicationDate":"2024-11-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Ammonia-free quasi-atmospheric MOCVD of InN/Al2O3 (0001)\",\"authors\":\"Hisashi Yamada , Tokio Takahashi , Takahiro Gotow , Naoto Kumagai , Tetsuji Shimizu , Toshihide Ide , Tatsuro Maeda\",\"doi\":\"10.1016/j.jcrysgro.2024.127980\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<div><div>We demonstrate ammonia-free quasi-atmospheric metal–organic chemical vapor deposition (AFQA-MOCVD) of InN grown on <em>c</em>-plane sapphire (Al<sub>2</sub>O<sub>3</sub>) substrate using high-density nitrogen (N<sub>2</sub>) microstrip-line microwave plasma. Dependence of growth temperature (T<sub>g</sub>) and N<sub>2</sub> plasma power on structural properties were examined. Increasing T<sub>g</sub> and N<sub>2</sub> plasma power markedly improved surface morphology of InN. An atomically smooth surface with layer-by-layer growth mode was realized at T<sub>g</sub> of 750 °C under N<sub>2</sub> plasma power of 80 W. Fully strain-relaxed InN was grown on in-plane crystal rotation by 30° with respect to the Al<sub>2</sub>O<sub>3</sub> (0001). N-polar InN on Al<sub>2</sub>O<sub>3</sub> (0001) was revealed by scanning transmission electron microscopy. AFQA-MOCVD enables to expand growth windows by increasing T<sub>g</sub> and V/III ratio compared to the standard MOCVD using NH<sub>3</sub>.</div></div>\",\"PeriodicalId\":353,\"journal\":{\"name\":\"Journal of Crystal Growth\",\"volume\":\"650 \",\"pages\":\"Article 127980\"},\"PeriodicalIF\":1.7000,\"publicationDate\":\"2024-11-02\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Journal of Crystal Growth\",\"FirstCategoryId\":\"88\",\"ListUrlMain\":\"https://www.sciencedirect.com/science/article/pii/S0022024824004184\",\"RegionNum\":4,\"RegionCategory\":\"材料科学\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q3\",\"JCRName\":\"CRYSTALLOGRAPHY\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Journal of Crystal Growth","FirstCategoryId":"88","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S0022024824004184","RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"CRYSTALLOGRAPHY","Score":null,"Total":0}
Ammonia-free quasi-atmospheric MOCVD of InN/Al2O3 (0001)
We demonstrate ammonia-free quasi-atmospheric metal–organic chemical vapor deposition (AFQA-MOCVD) of InN grown on c-plane sapphire (Al2O3) substrate using high-density nitrogen (N2) microstrip-line microwave plasma. Dependence of growth temperature (Tg) and N2 plasma power on structural properties were examined. Increasing Tg and N2 plasma power markedly improved surface morphology of InN. An atomically smooth surface with layer-by-layer growth mode was realized at Tg of 750 °C under N2 plasma power of 80 W. Fully strain-relaxed InN was grown on in-plane crystal rotation by 30° with respect to the Al2O3 (0001). N-polar InN on Al2O3 (0001) was revealed by scanning transmission electron microscopy. AFQA-MOCVD enables to expand growth windows by increasing Tg and V/III ratio compared to the standard MOCVD using NH3.
期刊介绍：
The journal offers a common reference and publication source for workers engaged in research on the experimental and theoretical aspects of crystal growth and its applications, e.g. in devices. Experimental and theoretical contributions are published in the following fields: theory of nucleation and growth, molecular kinetics and transport phenomena, crystallization in viscous media such as polymers and glasses; crystal growth of metals, minerals, semiconductors, superconductors, magnetics, inorganic, organic and biological substances in bulk or as thin films; molecular beam epitaxy, chemical vapor deposition, growth of III-V and II-VI and other semiconductors; characterization of single crystals by physical and chemical methods; apparatus, instrumentation and techniques for crystal growth, and purification methods; multilayer heterostructures and their characterisation with an emphasis on crystal growth and epitaxial aspects of electronic materials. A special feature of the journal is the periodic inclusion of proceedings of symposia and conferences on relevant aspects of crystal growth.
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