对齐多壁碳纳米管阵列中的多通道电子传输对鲁丁格液体行为的调制

IF 4 3区 材料科学 Q2 MATERIALS SCIENCE, MULTIDISCIPLINARY Synthetic Metals Pub Date : 2024-11-12 DOI:10.1016/j.synthmet.2024.117782
Mingming Li , Wenxiang Wang , Yang Wu , Zheng Wei , Jiawang You , Yongjun Li , Lianfeng Sun , Tao He
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引用次数: 0

摘要

在一维系统中,鲁丁格液态是典型的预期状态,以前主要在由孤立的单壁或多壁碳纳米管束制成的纳米器件中发现过这种状态。本研究调查了排列整齐的多壁碳纳米管阵列的电传输特性。排列整齐的阵列和覆盖金属 Mo 的阵列的电阻都与温度有很大关系,在 100 K 以下呈现出 R∼T-α 的幂律关系。通过调节多壁碳纳米管内对电导有贡献的管壁数量来调整电子传输通道,从而调节了鲁丁格液体行为。从理论上推导出的指数α是一个取决于传导通道数量的参数,它在整个阵列中的变化极小,并随着管状结构的打开而迅速减小,这是因为磁控溅射钼和碳原子之间发生了固-固反应。
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Modulation of Luttinger liquid behavior by multi-channel electron transport in aligned multi-walled carbon nanotube arrays
In the case of one-dimensional systems, Luttinger liquid states are typically anticipated, which have previously been identified primarily in nanoscopic devices fabricated from isolated bundles of single- or multi-walled carbon nanotubes. In this study, the electrical transport properties of aligned multi-walled carbon nanotube arrays were investigated. The resistance of both aligned arrays and those covered with metal Mo exhibits a strong dependence on temperature, demonstrating a power-law relationship of R∼Tα below 100 K. The Luttinger liquid behavior was modulated by tuning the electron-transport channels via alerting the number of walls that contribute to the conductance within the multi-walled carbon nanotubes. The exponent α, derived theoretically as a parameter that depends on the number of conducting channels, exhibits minimal variation across the arrays and declines rapidly with the tubular structure opening due to the solid-solid reaction between the magnetron-sputtered molybdenum and the carbon atoms.
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来源期刊
Synthetic Metals
Synthetic Metals 工程技术-材料科学:综合
CiteScore
8.30
自引率
4.50%
发文量
189
审稿时长
33 days
期刊介绍: This journal is an international medium for the rapid publication of original research papers, short communications and subject reviews dealing with research on and applications of electronic polymers and electronic molecular materials including novel carbon architectures. These functional materials have the properties of metals, semiconductors or magnets and are distinguishable from elemental and alloy/binary metals, semiconductors and magnets.
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