Broadband and wide-angle antireflection in silicon solar cells using atomically thin MoS2 with a gradient unit cell structure

Nanostructures have been extensively utilized to enhance light trapping and minimize reflection losses in silicon solar cells, leading to significant improvements in photovoltaic performance. Understanding how these structures influence broadband and omnidirectional antireflection (AR) is crucial for advancing solar technologies. In this study, we present an innovative AR design that integrates atomically thin MoS₂ with a gradient unit cell structure. Using finite-difference time-domain (FDTD) simulations, we demonstrate the exceptional broadband and wide-angle AR performance of this configuration. The gradient unit cell design enables effective light management across a wide range of incident angles and wavelengths. This approach offers a simpler alternative to conventional graded refractive index structures, reducing the complexity of fabrication while maintaining high efficiency. Our findings highlight the potential of this structure to revolutionize solar cell performance, paving the way for next-generation photovoltaic technologies.