Radhakrishnan Anbarasan , Duckjong Kim , Jae Hyun Park
{"title":"具有低热导率和高热电性能的三元过渡金属氮化物卤化物单层 MNI(M = Zr、Hf","authors":"Radhakrishnan Anbarasan , Duckjong Kim , Jae Hyun Park","doi":"10.1016/j.commatsci.2024.113508","DOIUrl":null,"url":null,"abstract":"<div><div>Machine learning-based approaches are promising in pursuing the thermal properties of two-dimensional materials. Here, a comprehensive study of thermal transport and thermoelectric properties of the <span><math><mi>β</mi></math></span>-form of ZrNI and HfNI monolayers, a family of ternary transition-metal nitride halides (TMNH), is presented by employing machine learning-based interatomic potential, Boltzmann transport theory, and first-principles calculations. The monolayer isolation and its stability are confirmed via cleavage energies, phonon dispersions, and ab initio molecular dynamics simulations. At room temperature, the lattice thermal conductivity of the ZrNI and HfNI monolayers are 7.8 W/(m<span><math><mi>⋅</mi></math></span>K) and 11.7 W/(m<span><math><mi>⋅</mi></math></span>K), respectively, which are considerably lower than those of typical 2D materials. The power factor of n-type doped ZrNI layer is 9 times higher than the HfNI monolayer due to high electrical conductivity of ZrNI. Also, the maximum figure of merit values of the n-type ZrNI always appears higher than the HfNI monolayer regardless of temperature. However, both the ZrNI and HfNI layers show superior thermoelectric properties over typical 2D materials. It reveals that the n-type ZrNI monolayer is a beneficial material for thermoelectric applications.</div></div>","PeriodicalId":10650,"journal":{"name":"Computational Materials Science","volume":"247 ","pages":"Article 113508"},"PeriodicalIF":3.1000,"publicationDate":"2024-11-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Ternary transition-metal nitride halide monolayers MNI (M = Zr, Hf) with low thermal conductivity and high thermoelectric figure of merit\",\"authors\":\"Radhakrishnan Anbarasan , Duckjong Kim , Jae Hyun Park\",\"doi\":\"10.1016/j.commatsci.2024.113508\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<div><div>Machine learning-based approaches are promising in pursuing the thermal properties of two-dimensional materials. Here, a comprehensive study of thermal transport and thermoelectric properties of the <span><math><mi>β</mi></math></span>-form of ZrNI and HfNI monolayers, a family of ternary transition-metal nitride halides (TMNH), is presented by employing machine learning-based interatomic potential, Boltzmann transport theory, and first-principles calculations. The monolayer isolation and its stability are confirmed via cleavage energies, phonon dispersions, and ab initio molecular dynamics simulations. At room temperature, the lattice thermal conductivity of the ZrNI and HfNI monolayers are 7.8 W/(m<span><math><mi>⋅</mi></math></span>K) and 11.7 W/(m<span><math><mi>⋅</mi></math></span>K), respectively, which are considerably lower than those of typical 2D materials. The power factor of n-type doped ZrNI layer is 9 times higher than the HfNI monolayer due to high electrical conductivity of ZrNI. Also, the maximum figure of merit values of the n-type ZrNI always appears higher than the HfNI monolayer regardless of temperature. However, both the ZrNI and HfNI layers show superior thermoelectric properties over typical 2D materials. It reveals that the n-type ZrNI monolayer is a beneficial material for thermoelectric applications.</div></div>\",\"PeriodicalId\":10650,\"journal\":{\"name\":\"Computational Materials Science\",\"volume\":\"247 \",\"pages\":\"Article 113508\"},\"PeriodicalIF\":3.1000,\"publicationDate\":\"2024-11-16\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Computational Materials Science\",\"FirstCategoryId\":\"88\",\"ListUrlMain\":\"https://www.sciencedirect.com/science/article/pii/S0927025624007298\",\"RegionNum\":3,\"RegionCategory\":\"材料科学\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q2\",\"JCRName\":\"MATERIALS SCIENCE, MULTIDISCIPLINARY\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Computational Materials Science","FirstCategoryId":"88","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S0927025624007298","RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"MATERIALS SCIENCE, MULTIDISCIPLINARY","Score":null,"Total":0}
Ternary transition-metal nitride halide monolayers MNI (M = Zr, Hf) with low thermal conductivity and high thermoelectric figure of merit
Machine learning-based approaches are promising in pursuing the thermal properties of two-dimensional materials. Here, a comprehensive study of thermal transport and thermoelectric properties of the -form of ZrNI and HfNI monolayers, a family of ternary transition-metal nitride halides (TMNH), is presented by employing machine learning-based interatomic potential, Boltzmann transport theory, and first-principles calculations. The monolayer isolation and its stability are confirmed via cleavage energies, phonon dispersions, and ab initio molecular dynamics simulations. At room temperature, the lattice thermal conductivity of the ZrNI and HfNI monolayers are 7.8 W/(mK) and 11.7 W/(mK), respectively, which are considerably lower than those of typical 2D materials. The power factor of n-type doped ZrNI layer is 9 times higher than the HfNI monolayer due to high electrical conductivity of ZrNI. Also, the maximum figure of merit values of the n-type ZrNI always appears higher than the HfNI monolayer regardless of temperature. However, both the ZrNI and HfNI layers show superior thermoelectric properties over typical 2D materials. It reveals that the n-type ZrNI monolayer is a beneficial material for thermoelectric applications.
期刊介绍:
The goal of Computational Materials Science is to report on results that provide new or unique insights into, or significantly expand our understanding of, the properties of materials or phenomena associated with their design, synthesis, processing, characterization, and utilization. To be relevant to the journal, the results should be applied or applicable to specific material systems that are discussed within the submission.