β-Gallium oxide (β-Ga₂O₃) is a promising wide-bandgap semiconductor for power electronics, requiring accurate molecular dynamics (MD) simulations to understand its atomic-scale behavior. This work presents the first automated optimization of ReaxFF parameters for β-Ga₂O₃ using Gaussian Process (GP) Bayesian optimization with a multi-objective framework incorporating pressure matching, force matching, and NVE stability testing. We optimized 22 critical ReaxFF parameters including bond energies, bond lengths, angle parameters, van der Waals interactions, and electronic properties. Reference data were obtained from MACE-MP-0, a universal machine learning potential trained on >150,000 DFT calculations. The multi-objective optimization achieved validated NVE ensemble stability at 0.1 fs timestep, with equilibrium pressure matching within 1.2% of MACE-MP-0 predictions (6.75 vs 6.67 GPa). The optimized parameters accurately reproduce experimental structural properties (lattice parameters within 0.3–2.6%, Ga
O bonds within 1%) and elastic constants within 2% of DFT values. Systematic timestep testing at 0.1, 0.25, and 0.5 fs confirmed that 0.1 fs is optimal for stable dynamics, characteristic of ReaxFF potentials with stiff bond terms. Parameter importance analysis revealed that van der Waals interactions and bond energies are most critical for accurate Ga₂O₃ modeling. The GP-Bayesian framework with multi-objective optimization successfully produced production-ready ReaxFF parameters for β-Ga₂O₃ MD simulations, demonstrating an efficient approach for developing reactive force fields with validated dynamic stability.
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