{"title":"AlxInyGa(1-x-y)N/AlaGabN 有序量子化集成量子势垒中铟摩尔含量对高效无垂钓 UV-C LED 的影响","authors":"Indrani Mazumder, Kashish Sapra, Ashok Chauhan, Manish Mathew, Kuldip Singh","doi":"10.1007/s11082-024-07609-8","DOIUrl":null,"url":null,"abstract":"<div><p>This article proposes a new Ultra-Violet (UV)-C Light emitting Diode (LED) structure based on orderly aligned Quaternary Nitride alloy based specially-designed quantized quantum barrier. In this article, we theoretically investigate the performance such as internal quantum efficiency (IQE), efficiency droop etc. of proposed structure and also compare it with the reference UV-C LED structure. In this proposed structure, there is no sudden potential barrier as in case of reference structure because of the strain compensation provided by the quantized periodic Superlattice-Al<sub>x</sub>In<sub>y</sub>Ga<sub>(1-x–y)</sub>N/ Al<sub>a</sub>Ga<sub>b</sub>N quantum barrier. Active region epilayer crystal orientation balanced by introducing ‘In' molar content in alternate sub-layers of quantum barrier (QB). This allows for stronger carrier confinement in the active region, which enhances IQE to 72% from 32% (reference structure) and reduction in efficiency droop from 11% to 0.05% at current density of 200 A-cm<sup>−2</sup>. The variation in the density of states (DOS) for carrier allocation due to strain balance in the quantum barrier compared to the quantum wells (QW) is responsible for the significant increase in the electro-optical efficiency of the light emitting device.</p></div>","PeriodicalId":720,"journal":{"name":"Optical and Quantum Electronics","volume":"56 12","pages":""},"PeriodicalIF":3.3000,"publicationDate":"2024-11-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Effect of indium molar content in AlxInyGa(1-x–y)N/AlaGabN orderly quantized integrated quantum barrier for highly efficient droop free UV-C LEDs\",\"authors\":\"Indrani Mazumder, Kashish Sapra, Ashok Chauhan, Manish Mathew, Kuldip Singh\",\"doi\":\"10.1007/s11082-024-07609-8\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<div><p>This article proposes a new Ultra-Violet (UV)-C Light emitting Diode (LED) structure based on orderly aligned Quaternary Nitride alloy based specially-designed quantized quantum barrier. In this article, we theoretically investigate the performance such as internal quantum efficiency (IQE), efficiency droop etc. of proposed structure and also compare it with the reference UV-C LED structure. In this proposed structure, there is no sudden potential barrier as in case of reference structure because of the strain compensation provided by the quantized periodic Superlattice-Al<sub>x</sub>In<sub>y</sub>Ga<sub>(1-x–y)</sub>N/ Al<sub>a</sub>Ga<sub>b</sub>N quantum barrier. Active region epilayer crystal orientation balanced by introducing ‘In' molar content in alternate sub-layers of quantum barrier (QB). This allows for stronger carrier confinement in the active region, which enhances IQE to 72% from 32% (reference structure) and reduction in efficiency droop from 11% to 0.05% at current density of 200 A-cm<sup>−2</sup>. The variation in the density of states (DOS) for carrier allocation due to strain balance in the quantum barrier compared to the quantum wells (QW) is responsible for the significant increase in the electro-optical efficiency of the light emitting device.</p></div>\",\"PeriodicalId\":720,\"journal\":{\"name\":\"Optical and Quantum Electronics\",\"volume\":\"56 12\",\"pages\":\"\"},\"PeriodicalIF\":3.3000,\"publicationDate\":\"2024-11-20\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Optical and Quantum Electronics\",\"FirstCategoryId\":\"5\",\"ListUrlMain\":\"https://link.springer.com/article/10.1007/s11082-024-07609-8\",\"RegionNum\":3,\"RegionCategory\":\"工程技术\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q2\",\"JCRName\":\"ENGINEERING, ELECTRICAL & ELECTRONIC\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Optical and Quantum Electronics","FirstCategoryId":"5","ListUrlMain":"https://link.springer.com/article/10.1007/s11082-024-07609-8","RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
引用次数: 0
摘要
本文提出了一种新型紫外线（UV）-C 发光二极管（LED）结构，该结构基于有序排列的四氮化物合金，并基于专门设计的量子势垒。在本文中，我们从理论上研究了所提结构的性能，如内部量子效率（IQE）、效率骤降等，并将其与参考的 UV-C LED 结构进行了比较。在这种拟议结构中，由于量子化周期性超晶格-AlxInyGa(1-x-y)N/ AlaGabN 量子势垒提供了应变补偿，因此不像参考结构那样存在突变势垒。通过在量子势垒（QB）的交替子层中引入 "In "摩尔含量来平衡有源区外延层的晶体取向。这使得有源区的载流子束缚更强，从而将 IQE 从 32%（参考结构）提高到 72%，并将电流密度为 200 A-cm-2 时的效率下降率从 11% 降至 0.05%。与量子阱（QW）相比，量子势垒中的应变平衡导致的载流子分配状态密度（DOS）的变化是发光器件电光效率显著提高的原因。
Effect of indium molar content in AlxInyGa(1-x–y)N/AlaGabN orderly quantized integrated quantum barrier for highly efficient droop free UV-C LEDs
This article proposes a new Ultra-Violet (UV)-C Light emitting Diode (LED) structure based on orderly aligned Quaternary Nitride alloy based specially-designed quantized quantum barrier. In this article, we theoretically investigate the performance such as internal quantum efficiency (IQE), efficiency droop etc. of proposed structure and also compare it with the reference UV-C LED structure. In this proposed structure, there is no sudden potential barrier as in case of reference structure because of the strain compensation provided by the quantized periodic Superlattice-AlxInyGa(1-x–y)N/ AlaGabN quantum barrier. Active region epilayer crystal orientation balanced by introducing ‘In' molar content in alternate sub-layers of quantum barrier (QB). This allows for stronger carrier confinement in the active region, which enhances IQE to 72% from 32% (reference structure) and reduction in efficiency droop from 11% to 0.05% at current density of 200 A-cm−2. The variation in the density of states (DOS) for carrier allocation due to strain balance in the quantum barrier compared to the quantum wells (QW) is responsible for the significant increase in the electro-optical efficiency of the light emitting device.
期刊介绍：
Optical and Quantum Electronics provides an international forum for the publication of original research papers, tutorial reviews and letters in such fields as optical physics, optical engineering and optoelectronics. Special issues are published on topics of current interest.
Optical and Quantum Electronics is published monthly. It is concerned with the technology and physics of optical systems, components and devices, i.e., with topics such as: optical fibres; semiconductor lasers and LEDs; light detection and imaging devices; nanophotonics; photonic integration and optoelectronic integrated circuits; silicon photonics; displays; optical communications from devices to systems; materials for photonics (e.g. semiconductors, glasses, graphene); the physics and simulation of optical devices and systems; nanotechnologies in photonics (including engineered nano-structures such as photonic crystals, sub-wavelength photonic structures, metamaterials, and plasmonics); advanced quantum and optoelectronic applications (e.g. quantum computing, memory and communications, quantum sensing and quantum dots); photonic sensors and bio-sensors; Terahertz phenomena; non-linear optics and ultrafast phenomena; green photonics.
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