通过掺杂 HTL 和 ETL 层提高 MAPb0.75Sn0.25I3 太阳能电池的效率

IF 3.3 3区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC Optical and Quantum Electronics Pub Date : 2024-11-20 DOI:10.1007/s11082-024-07812-7
Doua Abdallaoui, Afak Meftah, Nouredine Sengouga, Maroua Abdallaoui, Madani Labed
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引用次数: 0

摘要

对铅锡包晶(MAPb0.75Sn0.25I3)太阳能电池进行了数值模拟。模拟结果与测量值进行了验证(Li 等人,J. Mater. Chem. C Mater. 5:2360-2367, 2017),光电转换效率(PCE)与测量值 12.19≈12.08% 非常接近。随后,研究人员采用优化策略来提高太阳能电池的性能。通过在空穴和电子传输层(HTL、ETL)中掺杂各种元素以及调整 HTL、ETL 和包晶厚度,提高了 PCE 和载流子萃取率。这些优化措施使 PCE 提高到了 12.93%。使用氧化铜(Cu2O)作为 HTL 的进一步改进使 PCE 达到 13.38%。在 Cu2O 中掺入碲将 PCE 提高到 14.73%。在氧化锌中掺铜的效果优于其他 ETL,使 PCE 增加到 15.33%。总之,这些发现标志着在推进包晶体太阳能电池设计方面取得了重大进展,为进一步提高光电转换效率提供了宝贵的见解。
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Enhancement of MAPb0.75Sn0.25I3 solar cell efficiency by doping HTL and ETL layers

Numerical simulation of a lead–tin perovskite (MAPb0.75Sn0.25I3) solar cell was conducted. The simulation was validated against measurements (Li et al., J. Mater. Chem. C Mater. 5:2360–2367, 2017) and the photovoltaic conversion efficiency (PCE) closely matched the measured value, 12.19≈12.08%. Subsequently, optimization strategies to enhance the SC performance were pursued. Doping hole and electron transport layers (HTL, ETL) with various elements as well as adjusting HTL, ETL, and perovskite thicknesses have improved PCE and carriers’ extraction. These optimizations led to an enhancement in PCE to 12.93%. Further improvements using Copper oxide (Cu2O) as HTL yielded a PCE of 13.38%. Doping Cu2O with Tellurium pushed PCE to 14.73%. Copper doping of Zinc Oxide outperformed other ETLs and increased PCE to 15.33%. Overall, these findings represent significant strides in advancing the design of perovskite solar cells, providing valuable insights for further enhancements in photovoltaic conversion efficiency.

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来源期刊
Optical and Quantum Electronics
Optical and Quantum Electronics 工程技术-工程:电子与电气
CiteScore
4.60
自引率
20.00%
发文量
810
审稿时长
3.8 months
期刊介绍: Optical and Quantum Electronics provides an international forum for the publication of original research papers, tutorial reviews and letters in such fields as optical physics, optical engineering and optoelectronics. Special issues are published on topics of current interest. Optical and Quantum Electronics is published monthly. It is concerned with the technology and physics of optical systems, components and devices, i.e., with topics such as: optical fibres; semiconductor lasers and LEDs; light detection and imaging devices; nanophotonics; photonic integration and optoelectronic integrated circuits; silicon photonics; displays; optical communications from devices to systems; materials for photonics (e.g. semiconductors, glasses, graphene); the physics and simulation of optical devices and systems; nanotechnologies in photonics (including engineered nano-structures such as photonic crystals, sub-wavelength photonic structures, metamaterials, and plasmonics); advanced quantum and optoelectronic applications (e.g. quantum computing, memory and communications, quantum sensing and quantum dots); photonic sensors and bio-sensors; Terahertz phenomena; non-linear optics and ultrafast phenomena; green photonics.
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