{"title":"半填充安德森-哈伯德模型中金属-绝缘体转变附近的电阻特性","authors":"Thi-Hai-Yen Nguyen, Anh-Tuan Hoang, Duc-Anh Le","doi":"10.1007/s40042-024-01186-5","DOIUrl":null,"url":null,"abstract":"<div><p>In this study, we calculate the dc resistivity of the half-filled disordered Hubbard model near the Mott and Anderson metal–insulator transitions. We employ the standard Kubo formula with typical medium dynamical mean field theory to perform our calculations. Our investigation explores the effects of random potential, on-site Coulomb interaction, and temperature on the dc resistivity within the model. In addition, we highlight and discuss the distinct resistivity behaviors observed near the Mott and Anderson transitions.</p></div>","PeriodicalId":677,"journal":{"name":"Journal of the Korean Physical Society","volume":"85 10","pages":"825 - 829"},"PeriodicalIF":0.8000,"publicationDate":"2024-10-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Resistivity characteristics near the metal–insulator transition in the half-filled Anderson–Hubbard model\",\"authors\":\"Thi-Hai-Yen Nguyen, Anh-Tuan Hoang, Duc-Anh Le\",\"doi\":\"10.1007/s40042-024-01186-5\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<div><p>In this study, we calculate the dc resistivity of the half-filled disordered Hubbard model near the Mott and Anderson metal–insulator transitions. We employ the standard Kubo formula with typical medium dynamical mean field theory to perform our calculations. Our investigation explores the effects of random potential, on-site Coulomb interaction, and temperature on the dc resistivity within the model. In addition, we highlight and discuss the distinct resistivity behaviors observed near the Mott and Anderson transitions.</p></div>\",\"PeriodicalId\":677,\"journal\":{\"name\":\"Journal of the Korean Physical Society\",\"volume\":\"85 10\",\"pages\":\"825 - 829\"},\"PeriodicalIF\":0.8000,\"publicationDate\":\"2024-10-03\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Journal of the Korean Physical Society\",\"FirstCategoryId\":\"101\",\"ListUrlMain\":\"https://link.springer.com/article/10.1007/s40042-024-01186-5\",\"RegionNum\":4,\"RegionCategory\":\"物理与天体物理\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q3\",\"JCRName\":\"PHYSICS, MULTIDISCIPLINARY\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Journal of the Korean Physical Society","FirstCategoryId":"101","ListUrlMain":"https://link.springer.com/article/10.1007/s40042-024-01186-5","RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"PHYSICS, MULTIDISCIPLINARY","Score":null,"Total":0}
Resistivity characteristics near the metal–insulator transition in the half-filled Anderson–Hubbard model
In this study, we calculate the dc resistivity of the half-filled disordered Hubbard model near the Mott and Anderson metal–insulator transitions. We employ the standard Kubo formula with typical medium dynamical mean field theory to perform our calculations. Our investigation explores the effects of random potential, on-site Coulomb interaction, and temperature on the dc resistivity within the model. In addition, we highlight and discuss the distinct resistivity behaviors observed near the Mott and Anderson transitions.
期刊介绍：
The Journal of the Korean Physical Society (JKPS) covers all fields of physics spanning from statistical physics and condensed matter physics to particle physics. The manuscript to be published in JKPS is required to hold the originality, significance, and recent completeness. The journal is composed of Full paper, Letters, and Brief sections. In addition, featured articles with outstanding results are selected by the Editorial board and introduced in the online version. For emphasis on aspect of international journal, several world-distinguished researchers join the Editorial board. High quality of papers may be express-published when it is recommended or requested.
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