{"title":"量子点微柱状激光器在高温下的激光蚀刻","authors":"Andrey Babichev;Ivan Makhov;Natalia Kryzhanovskaya;Alexey Blokhin;Yuriy Zadiranov;Yulia Salii;Marina Kulagina;Mikhail Bobrov;Alexey Vasil'ev;Sergey Blokhin;Nikolay Maleev;Maria Tchernycheva;Leonid Karachinsky;Innokenty Novikov;Anton Egorov","doi":"10.1109/JSTQE.2024.3494245","DOIUrl":null,"url":null,"abstract":"A comprehensive numerical modelling of microcavity parameters for micropillar lasers with optical pumping was presented. The structure with a hybrid dielectric-semiconductor top mirror has a significantly higher calculated quality-factor (∼65000 for 5 μm pillar) due to better vertical mode confinement. The minimum laser threshold (∼370 μW for 5 μm pillar) coincided with a temperature of 130 K, which is close to zero gain to cavity detuning. Lasing up to 220 K was demonstrated with a laser threshold of about 2.2 mW.","PeriodicalId":13094,"journal":{"name":"IEEE Journal of Selected Topics in Quantum Electronics","volume":"31 5: Quantum Materials and Quantum Devices","pages":"1-8"},"PeriodicalIF":4.3000,"publicationDate":"2024-11-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Lasing of Quantum-Dot Micropillar Lasers Under Elevated Temperatures\",\"authors\":\"Andrey Babichev;Ivan Makhov;Natalia Kryzhanovskaya;Alexey Blokhin;Yuriy Zadiranov;Yulia Salii;Marina Kulagina;Mikhail Bobrov;Alexey Vasil'ev;Sergey Blokhin;Nikolay Maleev;Maria Tchernycheva;Leonid Karachinsky;Innokenty Novikov;Anton Egorov\",\"doi\":\"10.1109/JSTQE.2024.3494245\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A comprehensive numerical modelling of microcavity parameters for micropillar lasers with optical pumping was presented. The structure with a hybrid dielectric-semiconductor top mirror has a significantly higher calculated quality-factor (∼65000 for 5 μm pillar) due to better vertical mode confinement. The minimum laser threshold (∼370 μW for 5 μm pillar) coincided with a temperature of 130 K, which is close to zero gain to cavity detuning. Lasing up to 220 K was demonstrated with a laser threshold of about 2.2 mW.\",\"PeriodicalId\":13094,\"journal\":{\"name\":\"IEEE Journal of Selected Topics in Quantum Electronics\",\"volume\":\"31 5: Quantum Materials and Quantum Devices\",\"pages\":\"1-8\"},\"PeriodicalIF\":4.3000,\"publicationDate\":\"2024-11-08\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"IEEE Journal of Selected Topics in Quantum Electronics\",\"FirstCategoryId\":\"5\",\"ListUrlMain\":\"https://ieeexplore.ieee.org/document/10747402/\",\"RegionNum\":2,\"RegionCategory\":\"工程技术\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q1\",\"JCRName\":\"ENGINEERING, ELECTRICAL & ELECTRONIC\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE Journal of Selected Topics in Quantum Electronics","FirstCategoryId":"5","ListUrlMain":"https://ieeexplore.ieee.org/document/10747402/","RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q1","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
引用次数: 0
摘要
该研究介绍了用于光泵浦微柱激光器的微腔参数的综合数值建模。由于具有更好的垂直模式约束，带有混合介质-半导体顶镜的结构的计算品质因数明显更高（5 μm 柱为 65000）。最小激光阈值（5 μm 激光柱为 370 μW）与 130 K 的温度相吻合，这与腔体失谐的增益接近于零。激光阈值约为 2.2 mW 时，可在高达 220 K 的温度下产生激光。
Lasing of Quantum-Dot Micropillar Lasers Under Elevated Temperatures
A comprehensive numerical modelling of microcavity parameters for micropillar lasers with optical pumping was presented. The structure with a hybrid dielectric-semiconductor top mirror has a significantly higher calculated quality-factor (∼65000 for 5 μm pillar) due to better vertical mode confinement. The minimum laser threshold (∼370 μW for 5 μm pillar) coincided with a temperature of 130 K, which is close to zero gain to cavity detuning. Lasing up to 220 K was demonstrated with a laser threshold of about 2.2 mW.
期刊介绍：
Papers published in the IEEE Journal of Selected Topics in Quantum Electronics fall within the broad field of science and technology of quantum electronics of a device, subsystem, or system-oriented nature. Each issue is devoted to a specific topic within this broad spectrum. Announcements of the topical areas planned for future issues, along with deadlines for receipt of manuscripts, are published in this Journal and in the IEEE Journal of Quantum Electronics. Generally, the scope of manuscripts appropriate to this Journal is the same as that for the IEEE Journal of Quantum Electronics. Manuscripts are published that report original theoretical and/or experimental research results that advance the scientific and technological base of quantum electronics devices, systems, or applications. The Journal is dedicated toward publishing research results that advance the state of the art or add to the understanding of the generation, amplification, modulation, detection, waveguiding, or propagation characteristics of coherent electromagnetic radiation having sub-millimeter and shorter wavelengths. In order to be suitable for publication in this Journal, the content of manuscripts concerned with subject-related research must have a potential impact on advancing the technological base of quantum electronic devices, systems, and/or applications. Potential authors of subject-related research have the responsibility of pointing out this potential impact. System-oriented manuscripts must be concerned with systems that perform a function previously unavailable or that outperform previously established systems that did not use quantum electronic components or concepts. Tutorial and review papers are by invitation only.
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