{"title":"压电陶瓷异质结中能量收集与压力感应协同作用的比较研究","authors":"Zihao Liang;Emad Iranmanesh;Shuxin Lin;Weipeng Xuan;Hang Zhou","doi":"10.1109/LSENS.2024.3491581","DOIUrl":null,"url":null,"abstract":"In this letter, a novel fully flexible piezotronic bipolar junction transistor (n-p-n PBJT) is designed and constructed by configuring two ZnO/Poly(3-hexylthiophene) heterojunction diodes back to back. The n-p-n PBJT acts as a signal-mediated device providing both current and voltage as the outputs. The utilization of the n-p-n PBJT in wearable applications is testified where a unique synergy between energy harvesting and sensing is found. Under mechanical stress, the output signal is amplified (with no preamplifier circuitry), which makes it a proper candidate as a high-performance sensor (voltage-based sensitivity is extracted as 0.49 V/kPa, four times higher than piezotronic p-n heterojunction). As a wearable energy harvester, the output signal is rectified (with no signal regulation circuitry), and it generates a peak output power of 2.9 µW, which is ten times higher than that of the piezotronic p-n diode. The outstanding performance of the n-p-n PBJT provides a new strategy to improve device performance for the emerging application in wearable electronics.","PeriodicalId":13014,"journal":{"name":"IEEE Sensors Letters","volume":"8 12","pages":"1-4"},"PeriodicalIF":2.2000,"publicationDate":"2024-11-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"A Comparative Study on Synergy Between Energy Harvesting and Pressure Sensing in Piezotronic Heterojunctions\",\"authors\":\"Zihao Liang;Emad Iranmanesh;Shuxin Lin;Weipeng Xuan;Hang Zhou\",\"doi\":\"10.1109/LSENS.2024.3491581\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this letter, a novel fully flexible piezotronic bipolar junction transistor (n-p-n PBJT) is designed and constructed by configuring two ZnO/Poly(3-hexylthiophene) heterojunction diodes back to back. The n-p-n PBJT acts as a signal-mediated device providing both current and voltage as the outputs. The utilization of the n-p-n PBJT in wearable applications is testified where a unique synergy between energy harvesting and sensing is found. Under mechanical stress, the output signal is amplified (with no preamplifier circuitry), which makes it a proper candidate as a high-performance sensor (voltage-based sensitivity is extracted as 0.49 V/kPa, four times higher than piezotronic p-n heterojunction). As a wearable energy harvester, the output signal is rectified (with no signal regulation circuitry), and it generates a peak output power of 2.9 µW, which is ten times higher than that of the piezotronic p-n diode. The outstanding performance of the n-p-n PBJT provides a new strategy to improve device performance for the emerging application in wearable electronics.\",\"PeriodicalId\":13014,\"journal\":{\"name\":\"IEEE Sensors Letters\",\"volume\":\"8 12\",\"pages\":\"1-4\"},\"PeriodicalIF\":2.2000,\"publicationDate\":\"2024-11-04\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"IEEE Sensors Letters\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://ieeexplore.ieee.org/document/10742336/\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q3\",\"JCRName\":\"ENGINEERING, ELECTRICAL & ELECTRONIC\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE Sensors Letters","FirstCategoryId":"1085","ListUrlMain":"https://ieeexplore.ieee.org/document/10742336/","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
A Comparative Study on Synergy Between Energy Harvesting and Pressure Sensing in Piezotronic Heterojunctions
In this letter, a novel fully flexible piezotronic bipolar junction transistor (n-p-n PBJT) is designed and constructed by configuring two ZnO/Poly(3-hexylthiophene) heterojunction diodes back to back. The n-p-n PBJT acts as a signal-mediated device providing both current and voltage as the outputs. The utilization of the n-p-n PBJT in wearable applications is testified where a unique synergy between energy harvesting and sensing is found. Under mechanical stress, the output signal is amplified (with no preamplifier circuitry), which makes it a proper candidate as a high-performance sensor (voltage-based sensitivity is extracted as 0.49 V/kPa, four times higher than piezotronic p-n heterojunction). As a wearable energy harvester, the output signal is rectified (with no signal regulation circuitry), and it generates a peak output power of 2.9 µW, which is ten times higher than that of the piezotronic p-n diode. The outstanding performance of the n-p-n PBJT provides a new strategy to improve device performance for the emerging application in wearable electronics.