Sanjana Mathew, Sayan Halder, Keerthi C. J., Saurjyesh Hota, Maitreyi Suntha, Chanchal Chakraborty and Subhradeep Pal
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Under the presence of a broadband white light source, the peak photo-to-dark current ratio (PDCR) values for the PD fabricated on Si-substrate (PD1) are calculated to be 42.58 and 5.68 at the bias voltage (<em>V</em><small><sub>B</sub></small>) of −0.1 and +1.0 V, respectively. Similarly, the PD fabricated on ITO-coated PET substrate (PD2) under the influence of a broadband white light source offered PDCR values of 8.65 and 7.25 at a <em>V</em><small><sub>B</sub></small> of −4 V and +4 V, respectively. Experimental findings indicate that the fabricated PD1 achieves a peak responsivity of 2.12 A W<small><sup>−1</sup></small> at 410 nm with peak external quantum efficiency (EQE) values of 6.41% and 4.32% at 410 and 530 nm, respectively. The specific detectivity (<em>D)</em> values are estimated to be 4.42 × 10<small><sup>13</sup></small> Jones at 410 nm and 3.71 × 10<small><sup>13</sup></small> Jones at 530 nm. Similarly, the fabricated PD2 achieves the peak responsivity, external quantum efficiency, and specific detectivity values of 1.98 A W<small><sup>−1</sup></small>, 5.9% and 1.71 × 10<small><sup>13</sup></small> Jones at 410 nm, respectively. Transient performance analysis revealed that the P-TZTZ-based flexible PD exhibited rise and fall times of 180 ms and 100 ms, respectively. The high responsivity, detectivity, and millisecond-order switching time in rigid and flexible P-TZTZ-based PDs demonstrate the versatility and potential for diverse applications covering from rigid to flexible electronics.</p>","PeriodicalId":18242,"journal":{"name":"Materials Advances","volume":" 23","pages":" 9488-9499"},"PeriodicalIF":5.2000,"publicationDate":"2024-10-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://pubs.rsc.org/en/content/articlepdf/2024/ma/d4ma00780h?page=search","citationCount":"0","resultStr":"{\"title\":\"A high-performance broadband organic flexible photodetector from a narrow-bandgap thiazolo[5,4-d]thiazole containing conjugated polymer\",\"authors\":\"Sanjana Mathew, Sayan Halder, Keerthi C. 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Under the presence of a broadband white light source, the peak photo-to-dark current ratio (PDCR) values for the PD fabricated on Si-substrate (PD1) are calculated to be 42.58 and 5.68 at the bias voltage (<em>V</em><small><sub>B</sub></small>) of −0.1 and +1.0 V, respectively. Similarly, the PD fabricated on ITO-coated PET substrate (PD2) under the influence of a broadband white light source offered PDCR values of 8.65 and 7.25 at a <em>V</em><small><sub>B</sub></small> of −4 V and +4 V, respectively. Experimental findings indicate that the fabricated PD1 achieves a peak responsivity of 2.12 A W<small><sup>−1</sup></small> at 410 nm with peak external quantum efficiency (EQE) values of 6.41% and 4.32% at 410 and 530 nm, respectively. The specific detectivity (<em>D)</em> values are estimated to be 4.42 × 10<small><sup>13</sup></small> Jones at 410 nm and 3.71 × 10<small><sup>13</sup></small> Jones at 530 nm. 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引用次数: 0
摘要
本研究利用含有高迁移率共轭聚合物 P-TZTZ 的噻唑并[5,4-d]噻唑,开发了具有广谱能力的高性能有机光电探测器(OPD)。这种具有二维纳米片形态的低带隙聚合物是通过二硫代草酰氨和对苯二甲醛之间的简易缩合反应合成的。根据所使用的衬底(Si-wafer 和 PET 衬底),制造出了两种不同的光电探测器。制造出的两种光电探测器(PDs)在 400 到 1000 纳米的宽广区域内都表现出了相当的光电探测能力。在宽带白光光源的作用下,计算得出在硅基底上制造的光电探测器(PD1)在偏置电压(VB)为-0.1 V 和 +1.0 V 时的光暗电流比(PDCR)峰值分别为 42.58 和 5.68。同样,在宽带白光光源的影响下,在 ITO 涂层 PET 衬底上制作的 PD(PD2)在偏置电压为 -4 V 和 +4 V 时的 PDCR 值分别为 8.65 和 7.25。实验结果表明,所制造的 PD1 在 410 纳米波长处的峰值响应率为 2.12 A W-1,在 410 纳米波长和 530 纳米波长处的峰值外部量子效率 (EQE) 值分别为 6.41% 和 4.32%。据估计,在 410 纳米波长和 530 纳米波长处的比检出率(D)分别为 4.42 × 1013 琼斯和 3.71 × 1013 琼斯。同样,所制造的 PD2 在 410 纳米波长处的峰值响应度、外部量子效率和比检测度值分别为 1.98 A W-1、5.9% 和 1.71 × 1013 Jones。瞬态性能分析表明,基于 P-TZTZ 的柔性光致发光器件的上升和下降时间分别为 180 毫秒和 100 毫秒。基于刚性和柔性 P-TZTZ 的光致发光器件的高响应度、检测度和毫秒级开关时间证明了其在刚性和柔性电子器件等各种应用领域的多功能性和潜力。
A high-performance broadband organic flexible photodetector from a narrow-bandgap thiazolo[5,4-d]thiazole containing conjugated polymer
Our present study developed high-performance organic photodetectors (OPDs) with broad-spectrum capabilities utilizing a thiazolo[5,4-d]thiazole containing a high-mobility conjugated polymer P-TZTZ. The low bandgap polymer with 2D nanosheet morphology is synthesized by an easy condensation reaction between dithiooxamide and terephthalaldehyde. Based on the used substrate (Si-wafer and PET substrate), two variants of the proposed photodetectors were fabricated. Both variants of the fabricated photodetectors (PDs) demonstrated comparable photodetection capabilities in a broad region from 400 to 1000 nm. Under the presence of a broadband white light source, the peak photo-to-dark current ratio (PDCR) values for the PD fabricated on Si-substrate (PD1) are calculated to be 42.58 and 5.68 at the bias voltage (VB) of −0.1 and +1.0 V, respectively. Similarly, the PD fabricated on ITO-coated PET substrate (PD2) under the influence of a broadband white light source offered PDCR values of 8.65 and 7.25 at a VB of −4 V and +4 V, respectively. Experimental findings indicate that the fabricated PD1 achieves a peak responsivity of 2.12 A W−1 at 410 nm with peak external quantum efficiency (EQE) values of 6.41% and 4.32% at 410 and 530 nm, respectively. The specific detectivity (D) values are estimated to be 4.42 × 1013 Jones at 410 nm and 3.71 × 1013 Jones at 530 nm. Similarly, the fabricated PD2 achieves the peak responsivity, external quantum efficiency, and specific detectivity values of 1.98 A W−1, 5.9% and 1.71 × 1013 Jones at 410 nm, respectively. Transient performance analysis revealed that the P-TZTZ-based flexible PD exhibited rise and fall times of 180 ms and 100 ms, respectively. The high responsivity, detectivity, and millisecond-order switching time in rigid and flexible P-TZTZ-based PDs demonstrate the versatility and potential for diverse applications covering from rigid to flexible electronics.