通过浆状镀铝工艺沉积在 625 英寸铝板上的 si 改性铝涂层的微观结构评估

IF 5.3 2区 材料科学 Q1 MATERIALS SCIENCE, COATINGS & FILMS Surface & Coatings Technology Pub Date : 2024-11-25 DOI:10.1016/j.surfcoat.2024.131592
Omid Bakhtiary, Shayan Sarraf, Mansour Soltanieh
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引用次数: 0

摘要

硅改性铝涂层有望提高超合金在高温下的抗氧化性和耐腐蚀性。本研究调查了镀铝浆料中不同的硅含量对 IN625 上硅改性铝涂层的形态和结构的影响。该工艺包括在 PVA 水溶液中向 IN625 样品喷涂铝和硅颗粒浆料,然后在受控条件下进行热处理--两种气氛(空气和氩气)和两种加热斜坡(常规和闪蒸)。使用 FE-SEM、SEM、EDS 和 XRD 方法分析了表面形貌、横截面结构、元素组成和相的形成,而 DTA 分析则评估了加热过程中 AlSi 合金的形成。结果表明,浆料中硅含量越高,涂层中硅的掺入量就越大,但铝的活性并没有降低到足以沉积出低活性铝化物涂层的程度。惰性气氛(氩气)和闪蒸加热促进了硅和铝的共沉积,导致某些样品的外层富含铬和钼硅化物。所有浆料中的铝含量都足以在不同的硅含量下形成一致的β-NiAl。涂层中的平均硅含量在 5 到 15 wt% 之间,取决于浆料成分和热处理条件。Al30Si 泥浆产生的涂层厚度最大(约 90 μm),硅含量进一步增加会导致涂层厚度减小。这项研究表明,可以通过优化浆料镀铝来控制硅的掺入量,从而沉积出硅改性铝涂层,以实现耐用、高性能的应用。
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Microstructure evaluation of si-modified aluminide coatings on in625 deposited by slurry aluminizing process
Si-modified aluminide coatings are promising for improving oxidation and corrosion resistance in superalloys at high temperatures. This study investigated the effect of different silicon levels in the aluminizing slurry on the morphology and structure of Si-modified aluminide coatings on IN625. This process involved spraying a slurry of aluminum and silicon particles in an aqueous PVA solution onto IN625 samples, followed by heat treatment under controlled conditions - two atmospheres (air and argon) and two heating ramps (regular and flash). Surface morphologies, cross-sectional structures, elemental compositions, and phase formations were analyzed using FE-SEM, SEM, EDS, and XRD methods, while DTA analysis assessed AlSi alloy formation during heating. The results showed that higher silicon content in the slurry increased silicon incorporation in the coatings but did not reduce aluminum activity enough to deposit a low-activity aluminide coating. The inert atmosphere (argon) and flash heating promoted the co-deposition of Si and Al, resulting in Cr and Mo silicide-enriched outer layers in some samples. The aluminum content in all slurries was sufficient for consistent β-NiAl formation across different silicon levels. The average silicon content in coatings ranged from 5 to 15 wt% and depended on the slurry composition and heat treatment conditions. The Al30Si slurry produced the thickest coatings (~90 μm), with further increases in Si leading to reduced thickness. This study suggests that slurry aluminizing can be optimized to control silicon incorporation, depositing Si-modified aluminide coatings for durable, high-performance applications.
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来源期刊
Surface & Coatings Technology
Surface & Coatings Technology 工程技术-材料科学:膜
CiteScore
10.00
自引率
11.10%
发文量
921
审稿时长
19 days
期刊介绍: Surface and Coatings Technology is an international archival journal publishing scientific papers on significant developments in surface and interface engineering to modify and improve the surface properties of materials for protection in demanding contact conditions or aggressive environments, or for enhanced functional performance. Contributions range from original scientific articles concerned with fundamental and applied aspects of research or direct applications of metallic, inorganic, organic and composite coatings, to invited reviews of current technology in specific areas. Papers submitted to this journal are expected to be in line with the following aspects in processes, and properties/performance: A. Processes: Physical and chemical vapour deposition techniques, thermal and plasma spraying, surface modification by directed energy techniques such as ion, electron and laser beams, thermo-chemical treatment, wet chemical and electrochemical processes such as plating, sol-gel coating, anodization, plasma electrolytic oxidation, etc., but excluding painting. B. Properties/performance: friction performance, wear resistance (e.g., abrasion, erosion, fretting, etc), corrosion and oxidation resistance, thermal protection, diffusion resistance, hydrophilicity/hydrophobicity, and properties relevant to smart materials behaviour and enhanced multifunctional performance for environmental, energy and medical applications, but excluding device aspects.
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