Atabek E. Atamuratov , Bahor O. Jabbarova , Makhkam M. Khalilloev , Dilshod R. Rajapov , Ahmed Yusupov , Jean Chamberlain Chedjou , Gurdial Blugan , Kamoladdin Saidov
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引用次数: 0
摘要
在这项研究中，我们模拟了在沟道中不同掺杂水平下，源极和漏极区域的掺杂曲线对 SOI FinFET 自热效应的影响。考虑了恒定剖面和两种分析剖面。此外，还考虑了在沟道不同掺杂水平下，掺杂曲线对阈值电压和离子/离子关比例的影响。为了考虑自热效应，使用了 TCAD Sentaurus 软件中的热力学传输模型进行模拟。仿真结果表明，自热效应、阈值电压和 Ion/Ioff 比率在很大程度上取决于源极和漏极区域的掺杂情况。
Impact of source (drain) doping profiles and channel doping level on self-heating effect in FinFET
In this work the impact of the doping profile in the source and drain areas on the self-heating effect in SOI FinFET is simulated at different doping levels in the channel. Constant profile as well as two types of analytical profiles are considered. The impact of the doping profile on the threshold voltage and on the ratio Ion/Ioff at different doping levels of the channel is also considered. To consider the self-heating effect the thermodynamic transport model in TCAD Sentaurus software is used for simulation. The results of simulation show that self-heating effect, threshold voltage, and Ion/Ioff ratio considerably depend on the doping profile in source and drain areas.
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