{"title":"对立方体塑性变形 Ib 型钻石(雅库特块石)中 Y 中心的研究","authors":"V.A. Nadolinny , Yu.N. Palyanov , M.I. Rakhmanova , Yu.M. Borzdov , A.Yu. Komarovskikh , V.S. Shatsky , A.L. Ragozin , O.P. Yurjeva","doi":"10.1016/j.diamond.2024.111821","DOIUrl":null,"url":null,"abstract":"<div><div>For a series of cubic type Ib diamond crystals from Yakutia placers, the interaction of Y centers with radiation defects has been studied and the effect of annealing at high-pressure high-temperature (HPHT) conditions on the infrared (IR) spectra of Y centers has been investigated. It is shown that as a result of electron irradiation and heat treatment at 1000 °C, the intensity of the IR band in the region of 1140–1150 cm<sup>−1</sup> (Y center) decreases and the H3 photoluminescence (PL) system (defect representing two nitrogen atoms around vacancy) arises, while the intensity of the IR band at 1282 cm<sup>−1</sup> (A center) remains almost unchanged. It is proposed that the H3 defect can be produced by the interaction of vacancy with the Y center. The suitable model for the Y center is a neutral N1 defect (nitrogen pair separated by one carbon atom), which is the limiting stage in the aggregation sequence of impurity nitrogen into the A form. For a neutral N1 structure, a higher energy barrier has to be overcome due to the Coulomb repulsion compared to the diffusion of nitrogen in the bulk crystal volume. The low content of A centers and the presence of nitrogen in the form of neutral N1 defects provide evidence of a sufficiently low growth temperature of the studied diamonds. The crystals have been annealed at HPHT conditions, and prior to the C centers, the Y centers transform into A defects. These results support the proposed model of the Y center as having two nitrogen atoms in proximity to each other (NCN). The IR band at 1332 cm<sup>−1</sup> (N<sup>+</sup> defect) does not anneal out even at a temperature of 2000 °C which indicates the presence of electron acceptors that remain stable at these treatment temperatures. The corresponding acceptor centers can be carbon broken bonds in the dislocation cores. The unusual properties of the N<sup>+</sup> states and the birefringence patterns in the studied diamonds evidence the plastic deformation of the crystals under study.</div></div>","PeriodicalId":11266,"journal":{"name":"Diamond and Related Materials","volume":"151 ","pages":"Article 111821"},"PeriodicalIF":4.3000,"publicationDate":"2024-11-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Investigation of the Y centers in cubic plastically deformed type Ib diamonds (Yakutia placers)\",\"authors\":\"V.A. Nadolinny , Yu.N. Palyanov , M.I. Rakhmanova , Yu.M. Borzdov , A.Yu. Komarovskikh , V.S. Shatsky , A.L. Ragozin , O.P. Yurjeva\",\"doi\":\"10.1016/j.diamond.2024.111821\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<div><div>For a series of cubic type Ib diamond crystals from Yakutia placers, the interaction of Y centers with radiation defects has been studied and the effect of annealing at high-pressure high-temperature (HPHT) conditions on the infrared (IR) spectra of Y centers has been investigated. It is shown that as a result of electron irradiation and heat treatment at 1000 °C, the intensity of the IR band in the region of 1140–1150 cm<sup>−1</sup> (Y center) decreases and the H3 photoluminescence (PL) system (defect representing two nitrogen atoms around vacancy) arises, while the intensity of the IR band at 1282 cm<sup>−1</sup> (A center) remains almost unchanged. It is proposed that the H3 defect can be produced by the interaction of vacancy with the Y center. The suitable model for the Y center is a neutral N1 defect (nitrogen pair separated by one carbon atom), which is the limiting stage in the aggregation sequence of impurity nitrogen into the A form. For a neutral N1 structure, a higher energy barrier has to be overcome due to the Coulomb repulsion compared to the diffusion of nitrogen in the bulk crystal volume. The low content of A centers and the presence of nitrogen in the form of neutral N1 defects provide evidence of a sufficiently low growth temperature of the studied diamonds. The crystals have been annealed at HPHT conditions, and prior to the C centers, the Y centers transform into A defects. These results support the proposed model of the Y center as having two nitrogen atoms in proximity to each other (NCN). The IR band at 1332 cm<sup>−1</sup> (N<sup>+</sup> defect) does not anneal out even at a temperature of 2000 °C which indicates the presence of electron acceptors that remain stable at these treatment temperatures. The corresponding acceptor centers can be carbon broken bonds in the dislocation cores. The unusual properties of the N<sup>+</sup> states and the birefringence patterns in the studied diamonds evidence the plastic deformation of the crystals under study.</div></div>\",\"PeriodicalId\":11266,\"journal\":{\"name\":\"Diamond and Related Materials\",\"volume\":\"151 \",\"pages\":\"Article 111821\"},\"PeriodicalIF\":4.3000,\"publicationDate\":\"2024-11-22\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Diamond and Related Materials\",\"FirstCategoryId\":\"88\",\"ListUrlMain\":\"https://www.sciencedirect.com/science/article/pii/S0925963524010343\",\"RegionNum\":3,\"RegionCategory\":\"材料科学\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q2\",\"JCRName\":\"MATERIALS SCIENCE, COATINGS & FILMS\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Diamond and Related Materials","FirstCategoryId":"88","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S0925963524010343","RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"MATERIALS SCIENCE, COATINGS & FILMS","Score":null,"Total":0}
引用次数: 0
摘要
针对一系列来自雅库特矿床的立方 Ib 型金刚石晶体,研究了 Y 中心与辐射缺陷的相互作用,并探讨了在高压高温(HPHT)条件下退火对 Y 中心红外光谱的影响。结果表明,经过电子辐照和 1000 ℃ 热处理后,1140-1150 cm-1(Y 中心)区域的红外波段强度降低,出现了 H3 光致发光(PL)系统(代表空位周围的两个氮原子缺陷),而 1282 cm-1(A 中心)的红外波段强度几乎保持不变。有人提出,H3 缺陷可能是由空位与 Y 中心的相互作用产生的。Y 中心的合适模型是中性 N1 缺陷(氮对被一个碳原子隔开),它是杂质氮聚集成 A 型的极限阶段。对于中性 N1 结构,与氮在晶体体积中的扩散相比,由于库仑斥力的存在,必须克服更高的能量障碍。A 中心的低含量和以中性 N1 缺陷形式存在的氮,证明了所研究钻石的生长温度足够低。晶体在高温高压条件下退火,在出现 C 中心之前,Y 中心转变为 A 缺陷。这些结果支持所提出的模型,即 Y 中心有两个相互靠近的氮原子(NCN)。即使在 2000 °C 的温度下,1332 cm-1 处的红外波段(N+ 缺陷)也不会退火,这表明存在在这些处理温度下保持稳定的电子受体。相应的受体中心可能是位错核心中的碳断裂键。所研究钻石中 N+ 态的不寻常特性和双折射模式证明了所研究晶体的塑性变形。
Investigation of the Y centers in cubic plastically deformed type Ib diamonds (Yakutia placers)
For a series of cubic type Ib diamond crystals from Yakutia placers, the interaction of Y centers with radiation defects has been studied and the effect of annealing at high-pressure high-temperature (HPHT) conditions on the infrared (IR) spectra of Y centers has been investigated. It is shown that as a result of electron irradiation and heat treatment at 1000 °C, the intensity of the IR band in the region of 1140–1150 cm−1 (Y center) decreases and the H3 photoluminescence (PL) system (defect representing two nitrogen atoms around vacancy) arises, while the intensity of the IR band at 1282 cm−1 (A center) remains almost unchanged. It is proposed that the H3 defect can be produced by the interaction of vacancy with the Y center. The suitable model for the Y center is a neutral N1 defect (nitrogen pair separated by one carbon atom), which is the limiting stage in the aggregation sequence of impurity nitrogen into the A form. For a neutral N1 structure, a higher energy barrier has to be overcome due to the Coulomb repulsion compared to the diffusion of nitrogen in the bulk crystal volume. The low content of A centers and the presence of nitrogen in the form of neutral N1 defects provide evidence of a sufficiently low growth temperature of the studied diamonds. The crystals have been annealed at HPHT conditions, and prior to the C centers, the Y centers transform into A defects. These results support the proposed model of the Y center as having two nitrogen atoms in proximity to each other (NCN). The IR band at 1332 cm−1 (N+ defect) does not anneal out even at a temperature of 2000 °C which indicates the presence of electron acceptors that remain stable at these treatment temperatures. The corresponding acceptor centers can be carbon broken bonds in the dislocation cores. The unusual properties of the N+ states and the birefringence patterns in the studied diamonds evidence the plastic deformation of the crystals under study.
期刊介绍:
DRM is a leading international journal that publishes new fundamental and applied research on all forms of diamond, the integration of diamond with other advanced materials and development of technologies exploiting diamond. The synthesis, characterization and processing of single crystal diamond, polycrystalline films, nanodiamond powders and heterostructures with other advanced materials are encouraged topics for technical and review articles. In addition to diamond, the journal publishes manuscripts on the synthesis, characterization and application of other related materials including diamond-like carbons, carbon nanotubes, graphene, and boron and carbon nitrides. Articles are sought on the chemical functionalization of diamond and related materials as well as their use in electrochemistry, energy storage and conversion, chemical and biological sensing, imaging, thermal management, photonic and quantum applications, electron emission and electronic devices.
The International Conference on Diamond and Carbon Materials has evolved into the largest and most well attended forum in the field of diamond, providing a forum to showcase the latest results in the science and technology of diamond and other carbon materials such as carbon nanotubes, graphene, and diamond-like carbon. Run annually in association with Diamond and Related Materials the conference provides junior and established researchers the opportunity to exchange the latest results ranging from fundamental physical and chemical concepts to applied research focusing on the next generation carbon-based devices.