Haolan Qu , Wei Huang , Yu Zhang , Jin Sui , Ge Yang , Jiaxiang Chen , David Wei Zhang , Yuangang Wang , Yuanjie Lv , Zhihong Feng , Xinbo Zou
{"title":"5 MeV 质子辐照对 β-Ga2O3 功率二极管电气和陷阱特性的影响","authors":"Haolan Qu , Wei Huang , Yu Zhang , Jin Sui , Ge Yang , Jiaxiang Chen , David Wei Zhang , Yuangang Wang , Yuanjie Lv , Zhihong Feng , Xinbo Zou","doi":"10.1016/j.mssp.2024.109121","DOIUrl":null,"url":null,"abstract":"<div><div>In this study, impact of 5 MeV proton irradiation with radiation fluence of 10<sup>13</sup> cm<sup>−2</sup> on <em>β</em>-Ga<sub>2</sub>O<sub>3</sub> power diode is investigated by a <em>β</em>-Ga<sub>2</sub>O<sub>3</sub> Schottky barrier diode (SBD). Via temperature-dependent measurements, carrier removal rate <em>R</em><sub><em>C</em></sub> is determined to be 7.26 × 10<sup>2</sup> cm<sup>−1</sup> at 300 K. Meanwhile, the threshold voltage (<em>V</em><sub><em>on</em></sub>) and ideality factor (<em>n</em>) almost remain stable after proton irradiation. A close-to-unity <em>n</em> was observed for a wide temperature range indicating near-ideal Schottky characteristics. Dynamic degradation was observed at 300K, but was greatly suppressed at a low temperature of 100K. Meanwhile, two more bulk traps are discovered in proton irradiated <em>β</em>-Ga<sub>2</sub>O<sub>3</sub> SBD by deep-level transient spectroscopy (DLTS). The larger corrected trap concentration (<em>N</em><sub><em>Ta</em></sub>) in proton irradiated <em>β</em>-Ga<sub>2</sub>O<sub>3</sub> SBD was regarded as the reason behind slightly worsened dynamic on-resistance instability at 300 K. Furthermore, lower low frequency noise is revealed for proton irradiated device at room temperature and cryogenic temperature. The study demonstrates the competitive irradiation hardness of <em>β</em>-Ga<sub>2</sub>O<sub>3</sub> power diodes and paves a solid path for the deployment of <em>β</em>-Ga<sub>2</sub>O<sub>3</sub> in space.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"187 ","pages":"Article 109121"},"PeriodicalIF":4.2000,"publicationDate":"2024-11-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Effect of 5 MeV proton irradiation on electrical and trap characteristics of β-Ga2O3 power diode\",\"authors\":\"Haolan Qu , Wei Huang , Yu Zhang , Jin Sui , Ge Yang , Jiaxiang Chen , David Wei Zhang , Yuangang Wang , Yuanjie Lv , Zhihong Feng , Xinbo Zou\",\"doi\":\"10.1016/j.mssp.2024.109121\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<div><div>In this study, impact of 5 MeV proton irradiation with radiation fluence of 10<sup>13</sup> cm<sup>−2</sup> on <em>β</em>-Ga<sub>2</sub>O<sub>3</sub> power diode is investigated by a <em>β</em>-Ga<sub>2</sub>O<sub>3</sub> Schottky barrier diode (SBD). Via temperature-dependent measurements, carrier removal rate <em>R</em><sub><em>C</em></sub> is determined to be 7.26 × 10<sup>2</sup> cm<sup>−1</sup> at 300 K. Meanwhile, the threshold voltage (<em>V</em><sub><em>on</em></sub>) and ideality factor (<em>n</em>) almost remain stable after proton irradiation. A close-to-unity <em>n</em> was observed for a wide temperature range indicating near-ideal Schottky characteristics. Dynamic degradation was observed at 300K, but was greatly suppressed at a low temperature of 100K. Meanwhile, two more bulk traps are discovered in proton irradiated <em>β</em>-Ga<sub>2</sub>O<sub>3</sub> SBD by deep-level transient spectroscopy (DLTS). The larger corrected trap concentration (<em>N</em><sub><em>Ta</em></sub>) in proton irradiated <em>β</em>-Ga<sub>2</sub>O<sub>3</sub> SBD was regarded as the reason behind slightly worsened dynamic on-resistance instability at 300 K. Furthermore, lower low frequency noise is revealed for proton irradiated device at room temperature and cryogenic temperature. The study demonstrates the competitive irradiation hardness of <em>β</em>-Ga<sub>2</sub>O<sub>3</sub> power diodes and paves a solid path for the deployment of <em>β</em>-Ga<sub>2</sub>O<sub>3</sub> in space.</div></div>\",\"PeriodicalId\":18240,\"journal\":{\"name\":\"Materials Science in Semiconductor Processing\",\"volume\":\"187 \",\"pages\":\"Article 109121\"},\"PeriodicalIF\":4.2000,\"publicationDate\":\"2024-11-19\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Materials Science in Semiconductor Processing\",\"FirstCategoryId\":\"5\",\"ListUrlMain\":\"https://www.sciencedirect.com/science/article/pii/S1369800124010175\",\"RegionNum\":3,\"RegionCategory\":\"工程技术\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q2\",\"JCRName\":\"ENGINEERING, ELECTRICAL & ELECTRONIC\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Materials Science in Semiconductor Processing","FirstCategoryId":"5","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S1369800124010175","RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
Effect of 5 MeV proton irradiation on electrical and trap characteristics of β-Ga2O3 power diode
In this study, impact of 5 MeV proton irradiation with radiation fluence of 1013 cm−2 on β-Ga2O3 power diode is investigated by a β-Ga2O3 Schottky barrier diode (SBD). Via temperature-dependent measurements, carrier removal rate RC is determined to be 7.26 × 102 cm−1 at 300 K. Meanwhile, the threshold voltage (Von) and ideality factor (n) almost remain stable after proton irradiation. A close-to-unity n was observed for a wide temperature range indicating near-ideal Schottky characteristics. Dynamic degradation was observed at 300K, but was greatly suppressed at a low temperature of 100K. Meanwhile, two more bulk traps are discovered in proton irradiated β-Ga2O3 SBD by deep-level transient spectroscopy (DLTS). The larger corrected trap concentration (NTa) in proton irradiated β-Ga2O3 SBD was regarded as the reason behind slightly worsened dynamic on-resistance instability at 300 K. Furthermore, lower low frequency noise is revealed for proton irradiated device at room temperature and cryogenic temperature. The study demonstrates the competitive irradiation hardness of β-Ga2O3 power diodes and paves a solid path for the deployment of β-Ga2O3 in space.
期刊介绍：
Materials Science in Semiconductor Processing provides a unique forum for the discussion of novel processing, applications and theoretical studies of functional materials and devices for (opto)electronics, sensors, detectors, biotechnology and green energy.
Each issue will aim to provide a snapshot of current insights, new achievements, breakthroughs and future trends in such diverse fields as microelectronics, energy conversion and storage, communications, biotechnology, (photo)catalysis, nano- and thin-film technology, hybrid and composite materials, chemical processing, vapor-phase deposition, device fabrication, and modelling, which are the backbone of advanced semiconductor processing and applications.
Coverage will include: advanced lithography for submicron devices; etching and related topics; ion implantation; damage evolution and related issues; plasma and thermal CVD; rapid thermal processing; advanced metallization and interconnect schemes; thin dielectric layers, oxidation; sol-gel processing; chemical bath and (electro)chemical deposition; compound semiconductor processing; new non-oxide materials and their applications; (macro)molecular and hybrid materials; molecular dynamics, ab-initio methods, Monte Carlo, etc.; new materials and processes for discrete and integrated circuits; magnetic materials and spintronics; heterostructures and quantum devices; engineering of the electrical and optical properties of semiconductors; crystal growth mechanisms; reliability, defect density, intrinsic impurities and defects.
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