基于压电陶瓷数量的超声波传感器振动特性研究

IF 4.1 3区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC Sensors and Actuators A-physical Pub Date : 2024-11-07 DOI:10.1016/j.sna.2024.116037
Yuxiang Li, Shuyuan Ye, Zhili Long, Jianzhong Ju, Heng Zhao
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引用次数: 0

摘要

作为振动执行源,应用于超声波传感器(UT)上的 PZT 对 UT 的振动特性起着至关重要的作用。传统研究大多关注 PZT 叠层的整体尺寸和位置关系,而 PZT 数量对 UT 振动特性的影响却鲜有报道。在本文中,我们对具有相同几何结构的UT,特别是具有 2 个(UT2)、4 个(UT4)和 6 个(UT6)PZT 的UT 的 PZT 数量与振动特性之间的关系进行了全面研究。建立了基于 PZT 数量的机电等效电路和有限元分析 (FEM),以研究阻抗和谐振频率。此外,还提出了UT 的动态位移模型,以研究 PZT 数量对振幅的影响,计算结果与谐响应分析结果一致。最后,建立了实验平台来测试三种类型 UT 的振动特性。结果表明,换能器的共振频率不受 PZT 数量的影响,而阻抗和阻抗稳定性则可通过增加 PZT 数量得到改善。此外,UT 的振幅与 PZT 的数量呈负相关。通过实验验证,UT2 适用于负载小于 1000 g 和振幅小于 2.2 µm 的条件,而 UT4 则适用于其他条件。虽然 UT6 具有出色的阻抗稳定性,但其输出功率相对较高,不适合本文所使用的结构。研究结果表明,应根据工作条件设计 PZT 的数量,以提高振幅输出并尽量减少功率损失。本文提出的方法可以有效改善能耗和工作寿命,使UT更加绿色、高效。
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Investigation to the vibration characteristics of ultrasonic transducer based on the number of piezoelectric ceramics
As the vibration actuator source, PZT applied on the ultrasonic transducers (UTs) plays a crucial role in the vibration characteristics of UTs. Most conventional research focus on the overall size and positional relationship of PZT stack, while the influence of PZT numbers on vibration characteristics of UTs is seldom reported. In this article, we present a comprehensive investigation between the PZT numbers and vibration characteristics of UTs with identical geometric configurations, specifically UTs with 2 (UT2), 4 (UT4) and 6 (UT6) PZT. The electromechanical equivalent circuit and finite element analysis (FEM) based on PZT numbers are established to investigate the impedance and resonant frequency. Furthermore, the dynamic displacement model of the UTs is proposed to study the influence of PZT numbers on amplitude, and the calculation results are consistent with harmonic response analysis. Finally, the experimental platform is established to test the vibration characteristics of the three types UTs. The results show that the resonant frequency of the transducer is not affected by the numbers of PZT, while the impedance and impedance stability can be improved by the increased PZT numbers. Moreover, the amplitude of UTs is negatively correlated with the numbers of PZT. Through experiments, it is verified that UT2 is suitable for the conditions as the load less than 1000 g and amplitude less than 2.2 µm, and UT4 is applicable to the other conditions. Although the UT6 exhibits excellent impedance stability, its output power is relatively high and is not suitable for the structure used in this article. The findings suggest that the number of PZTs should be designed based on the operational conditions to improve amplitude output and minimize the loss of power. The presented methods can effectively improve energy consumption and working life, making the UTs greener and more efficient.
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来源期刊
Sensors and Actuators A-physical
Sensors and Actuators A-physical 工程技术-工程:电子与电气
CiteScore
8.10
自引率
6.50%
发文量
630
审稿时长
49 days
期刊介绍: Sensors and Actuators A: Physical brings together multidisciplinary interests in one journal entirely devoted to disseminating information on all aspects of research and development of solid-state devices for transducing physical signals. Sensors and Actuators A: Physical regularly publishes original papers, letters to the Editors and from time to time invited review articles within the following device areas: • Fundamentals and Physics, such as: classification of effects, physical effects, measurement theory, modelling of sensors, measurement standards, measurement errors, units and constants, time and frequency measurement. Modeling papers should bring new modeling techniques to the field and be supported by experimental results. • Materials and their Processing, such as: piezoelectric materials, polymers, metal oxides, III-V and II-VI semiconductors, thick and thin films, optical glass fibres, amorphous, polycrystalline and monocrystalline silicon. • Optoelectronic sensors, such as: photovoltaic diodes, photoconductors, photodiodes, phototransistors, positron-sensitive photodetectors, optoisolators, photodiode arrays, charge-coupled devices, light-emitting diodes, injection lasers and liquid-crystal displays. • Mechanical sensors, such as: metallic, thin-film and semiconductor strain gauges, diffused silicon pressure sensors, silicon accelerometers, solid-state displacement transducers, piezo junction devices, piezoelectric field-effect transducers (PiFETs), tunnel-diode strain sensors, surface acoustic wave devices, silicon micromechanical switches, solid-state flow meters and electronic flow controllers. Etc...
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