用于 VECSEL 有源区的 GaAsBi MQW 结构的内部量子效率

IF 3.5 2区物理与天体物理 Q2 PHYSICS, APPLIED Applied Physics Letters Pub Date : 2024-11-25 DOI:10.1063/5.0234853

A. Štaupienė, A. Zelioli, A. Špokas, A. Vaitkevičius, B. Čechavičius, S. Stanionytė, S. Raišys, R. Butkutė, E. Dudutienė

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引用次数: 0

摘要

我们对 GaAsBi/GaAs 多量子阱结构的光学特性进行了详细研究，该结构针对垂直外腔表面发射激光器的有源区进行了优化。该量子结构是通过分子束外延法生长的，每隔一个势垒都做得更薄，以获得具有高光致发光（PL）强度的均匀结构。在 4 至 300 K 的宽温度范围内进行了光致发光测量。铋含量为 8.0% 的 QW 中的光学转变产生了 1.085 eV 的光致发光带。PL 峰位置的 S 型温度依赖性显示出 30 meV 的高局域化效应。利用改进的 ABB* 方法评估了双晶结构的内部量子效率 (IQE)，其中包括陷阱辅助奥杰尔重组的贡献。计算结果表明，GaAs0.92Bi0.08/GaAs 12 QWs 结构的 IQE 较低，仅为 <0.025%，原因是生长温度较低，导致材料中的点缺陷密度较高。

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Internal quantum efficiency of GaAsBi MQW structure for the active region of VECSELs

We present a detailed study on the optical properties of GaAsBi/GaAs multiple quantum well structure, optimized for the active area for vertical-external-cavity surface-emitting lasers. The quantum structure was grown by molecular beam epitaxy with every other barrier made thinner to have a homogeneous structure with high photoluminescence (PL) intensity. PL measurements were carried out in a wide temperature range from 4 to 300 K. The PL band of 1.085 eV was attributed to the optical transition in QWs with 8.0%Bi. The S-shaped temperature dependence of PL peak positions showed high localization effect of 30 meV. The internal quantum efficiency (IQE) was evaluated for the bismide structures with a modified ABB* method, which includes contribution from trap-assisted Auger recombination. The calculations showed low IQE of <0.025% for GaAs0.92Bi0.08/GaAs 12 QWs structure, which was explained by the low growth temperature, resulting in a high density of point defects in the material.

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来源期刊

Applied Physics Letters 物理-物理：应用

CiteScore

6.40

自引率

10.00%

发文量

1821

审稿时长

1.6 months

期刊介绍： Applied Physics Letters (APL) features concise, up-to-date reports on significant new findings in applied physics. Emphasizing rapid dissemination of key data and new physical insights, APL offers prompt publication of new experimental and theoretical papers reporting applications of physics phenomena to all branches of science, engineering, and modern technology. In addition to regular articles, the journal also publishes invited Fast Track, Perspectives, and in-depth Editorials which report on cutting-edge areas in applied physics. APL Perspectives are forward-looking invited letters which highlight recent developments or discoveries. Emphasis is placed on very recent developments, potentially disruptive technologies, open questions and possible solutions. They also include a mini-roadmap detailing where the community should direct efforts in order for the phenomena to be viable for application and the challenges associated with meeting that performance threshold. Perspectives are characterized by personal viewpoints and opinions of recognized experts in the field. Fast Track articles are invited original research articles that report results that are particularly novel and important or provide a significant advancement in an emerging field. Because of the urgency and scientific importance of the work, the peer review process is accelerated. If, during the review process, it becomes apparent that the paper does not meet the Fast Track criterion, it is returned to a normal track.